| Effect of the built-in electric field on optical and electrical properties of AlGaAs/InGaAs/GaAs P-HEMT nanoheterostructures RA Khabibullin, IS Vasil’evskii, GB Galiev, EA Klimov, DS Ponomarev, ... Semiconductors 45, 657-662, 2011 | 23 | 2011 |
| Effect of (1 0 0) GaAs substrate misorientation on electrophysical parameters, structural properties and surface morphology of metamorphic HEMT nanoheterostructures InGaAs/InAlAs GB Galiev, IS Vasil'evskii, EА Klimov, SS Pushkarev, AN Klochkov, ... Journal of crystal growth 392, 11-19, 2014 | 22 | 2014 |
| Specific features of the photoluminescence of HEMT nanoheterostructures containing a composite InAlAs/InGaAs/InAs/InGaAs/InAlAs quantum well GB Galiev, IS Vasil’evskii, EA Klimov, AN Klochkov, DV Lavruhin, ... Semiconductors 49, 234-241, 2015 | 19 | 2015 |
| Energy spectrum and thermal properties of a terahertz quantum-cascade laser based on the resonant-phonon depopulation scheme RA Khabibullin, NV Shchavruk, AN Klochkov, IA Glinskiy, NV Zenchenko, ... Semiconductors 51, 514-519, 2017 | 18 | 2017 |
| Improved InGaAs and InGaAs/InAlAs photoconductive antennas based on (111)-oriented substrates K Kuznetsov, A Klochkov, A Leontyev, E Klimov, S Pushkarev, G Galiev, ... Electronics 9 (3), 495, 2020 | 17 | 2020 |
| Terahertz quantum-cascade laser based on the resonant-phonon depopulation scheme RA Khabibullin, NV Shchavruk, AY Pavlov, AN Klochkov, DS Ponomarev, ... International Journal of High Speed Electronics and Systems 25 (03n04), 1640022, 2016 | 14 | 2016 |
| Terahertz-radiation generation in low-temperature InGaAs epitaxial films on (100) and (411) InP substrates GB Galiev, MM Grekhov, GK Kitaeva, EA Klimov, AN Klochkov, ... Semiconductors 51, 310-317, 2017 | 13 | 2017 |
| Ultrafast Dynamics of Photoexcited Charge Carriers in In0.53Ga0.47As/In0.52Al0.48As Superlattices under Femtosecond Laser Excitation DS Ponomarev, RA Khabibullin, AN Klochkov, AE Yachmenev, ... Semiconductors 52, 864-869, 2018 | 10 | 2018 |
| Photoconductive antennas based on epitaxial films In0. 5Ga0. 5As on GaAs (1 1 1) A and (1 0 0) A substrates with a metamorphic buffer KA Kuznetsov, GB Galiev, GK Kitaeva, VV Kornienko, EA Klimov, ... Laser Physics Letters 15 (7), 076201, 2018 | 10 | 2018 |
| Electrophysical and structural properties of the composite quantum wells In0. 52Al0. 48As/InxGa1− xAs/In0. 52Al0. 48As with ultrathin InAs inserts GB Galiev, IS Vasil'evskii, EA Klimov, SS Pushkarev, AN Klochkov, ... Journal of Materials Research 30 (20), 3020-3025, 2015 | 10* | 2015 |
| Photoluminescence studies of In0.7Al0.3As/In0.75Ga0.25As/In0.7Al0.3As metamorphic heterostructures on GaAs substrates GB Galiev, EA Klimov, AN Klochkov, DV Lavruhin, SS Pushkarev, ... Semiconductors 48, 640-648, 2014 | 10 | 2014 |
| Electron effective masses, nonparabolicity and scattering times in one side delta-doped PHEMT AlGaAs/InGaAs/GaAs quantum wells at high electron density limit DA Safonov, AN Klochkov, AN Vinichenko, YD Sibirmovsky, NI Kargin, ... Physica E: Low-Dimensional Systems and Nanostructures 133, 114787, 2021 | 9 | 2021 |
| New structure for photoconductive antennas based on {LTG-GaAs/GaAs: Si} superlattice on GaAs (111) a substrate GB Galiev, IN Trunkin, AL Vasiliev, IS Vasil’evskii, AN Vinichenko, ... Crystallography Reports 64, 205-211, 2019 | 9 | 2019 |
| Photoluminescence studies of Si-doped epitaxial GaAs films grown on (100)-and (111) A-oriented GaAs substrates at lowered temperatures GB Galiev, EA Klimov, AN Klochkov, SS Pushkarev, PP Maltsev Semiconductors 52, 376-382, 2018 | 9 | 2018 |
| Ultrafast carrier dynamics in LT-GaAs doped with Si delta layers DI Khusyainov, C Dekeyser, AM Buryakov, ED Mishina, GB Galiev, ... International Journal of Modern Physics B 31 (27), 1750195, 2017 | 9 | 2017 |
| Pulsed terahertz radiation from a double-barrier resonant tunneling diode biased into self-oscillation regime GK Rasulova, IV Pentin, YB Vakhtomin, KV Smirnov, RA Khabibullin, ... Journal of Applied Physics 128 (22), 2020 | 7 | 2020 |
| Photoluminescence properties of modulation-doped In x Al 1–x As/In y Ga 1–y As/In x Al 1–x As structures with strained inas and gaas nanoinserts in the quantum well GB Galiev, IS Vasil’evskii, EA Klimov, AN Klochkov, DV Lavruhin, ... Semiconductors 49, 1207-1217, 2015 | 6 | 2015 |
| THz radiation of photoconductive antennas based on {LT-GaAa/GaAa: Si} superlattice structures AN Klochkov, EA Klimov, PM Solyankin, MR Konnikova, IS Vasil’evskii, ... Optics and Spectroscopy 128, 1010-1017, 2020 | 5 | 2020 |
| Electrical and structural characteristics of metamorphic In0.38Al0.62As/In0.37Ga0.63As/In0.38Al0.62As HEMT nanoheterostructures GB Galiev, EA Klimov, AN Klochkov, PP Maltsev, SS Pushkarev, ... Crystallography Reports 58, 914-919, 2013 | 5 | 2013 |
| Study of the surface morphology, electrophysical characteristics, and photoluminescence spectra of GaAs epitaxial films on GaAs (110) substrates GB Galiev, EA Klimov, AA Zaitsev, SS Pushkarev, AN Klochkov Optics and Spectroscopy 128, 877-884, 2020 | 4 | 2020 |
Galib GalievInstitute of Ultrahigh Frequency Semiconductor Electronics of RAS, Moscow在 isvch.ru 的电子邮件经过验证
