| A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5−x/TaO2−x bilayer structures MJ Lee, CB Lee, D Lee, SR Lee, M Chang, JH Hur, YB Kim, CJ Kim, ... Nature materials 10 (8), 625-630, 2011 | 2373 | 2011 |
| Reproducible resistance switching in polycrystalline NiO films S Seo, MJ Lee, DH Seo, EJ Jeoung, DS Suh, YS Joung, IK Yoo, ... Applied Physics Letters 85 (23), 5655-5657, 2004 | 1202 | 2004 |
| Graphene barristor, a triode device with a gate-controlled Schottky barrier H Yang, J Heo, S Park, HJ Song, DH Seo, KE Byun, P Kim, IK Yoo, ... Science 336 (6085), 1140-1143, 2012 | 1121 | 2012 |
| Highly scalable nonvolatile resistive memory using simple binary oxide driven by asymmetric unipolar voltage pulses IG Baek, MS Lee, S Seo, MJ Lee, DH Seo, DS Suh, JC Park, SO Park, ... IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004 …, 2004 | 913 | 2004 |
| Two series oxide resistors applicable to high speed and high density nonvolatile memory MJ Lee, Y Park, DS Suh, EH Lee, S Seo, DC Kim, R Jung, BS Kang, ... Advanced Materials 19 (22), 3919-3923, 2007 | 513 | 2007 |
| Electrical manipulation of nanofilaments in transition-metal oxides for resistance-based memory MJ Lee, S Han, SH Jeon, BH Park, BS Kang, SE Ahn, KH Kim, CB Lee, ... Nano letters 9 (4), 1476-1481, 2009 | 494 | 2009 |
| A low‐temperature‐grown oxide diode as a new switch element for high‐density, nonvolatile memories MJ Lee, S Seo, DC Kim, SE Ahn, DH Seo, IK Yoo, IG Baek, DS Kim, ... Advanced Materials 19 (1), 73-76, 2007 | 289 | 2007 |
| Conductivity switching characteristics and reset currents in NiO films S Seo, MJ Lee, DH Seo, SK Choi, DS Suh, YS Joung, IK Yoo, IS Byun, ... Applied Physics Letters 86 (9), 2005 | 254 | 2005 |
| Robust bi-stable memory operation in single-layer graphene ferroelectric memory EB Song, B Lian, S Min Kim, S Lee, TK Chung, M Wang, C Zeng, G Xu, ... Applied Physics Letters 99 (4), 2011 | 187 | 2011 |
| A plasma-treated chalcogenide switch device for stackable scalable 3D nanoscale memory MJ Lee, D Lee, SH Cho, JH Hur, SM Lee, DH Seo, DS Kim, MS Yang, ... Nature communications 4 (1), 2629, 2013 | 157 | 2013 |
| Transparent and flexible graphene charge-trap memory SM Kim, EB Song, S Lee, J Zhu, DH Seo, M Mecklenburg, S Seo, ... ACS nano 6 (9), 7879-7884, 2012 | 123 | 2012 |
| Graphene for true ohmic contact at metal–semiconductor junctions KE Byun, HJ Chung, J Lee, H Yang, HJ Song, J Heo, DH Seo, S Park, ... Nano letters 13 (9), 4001-4005, 2013 | 120 | 2013 |
| Nonmonotonic temperature dependent transport in graphene grown by chemical vapor deposition J Heo, HJ Chung, SH Lee, H Yang, DH Seo, JK Shin, UI Chung, S Seo, ... Physical Review B 84 (3), 035421, 2011 | 104 | 2011 |
| Nonvolatile memory device, array of nonvolatile memory devices, and methods of making the same SE Ahn, I Yoo, YS Joung, YK Cha, MJ Lee, D Seo, SA Seo US Patent 7,602,042, 2009 | 97 | 2009 |
| Suspended few-layer graphene beam electromechanical switch with abrupt on-off characteristics and minimal leakage current SM Kim, EB Song, S Lee, S Seo, DH Seo, Y Hwang, R Candler, KL Wang Applied Physics Letters 99 (2), 2011 | 90 | 2011 |
| Passivation of metal surface states: microscopic origin for uniform monolayer graphene by low temperature chemical vapor deposition I Jeon, H Yang, SH Lee, J Heo, DH Seo, J Shin, UI Chung, ZG Kim, ... Acs Nano 5 (3), 1915-1920, 2011 | 79 | 2011 |
| IEDM Tech. Dig. IG Baek, MS Lee, S Seo, MJ Lee, DH Seo, DS Suh, JC Park, SO Park, ... Tech. Dig, 587, 2004 | 76 | 2004 |
| Memory device using multi-layer with a graded resistance change MJ Lee, I Yoo, SA Seo, D Suh, D Seo, SH Jeon US Patent 7,521,704, 2009 | 75 | 2009 |
| Nonvolatile memory device having two or more resistance elements and methods of forming and using the same YS Joung, Y Park, I Yoo, MJ Lee, SA Seo, HY Kim, SE Ahn, D Seo US Patent 7,400,027, 2008 | 73 | 2008 |
| Robust graphene wet transfer process through low molecular weight polymethylmethacrylate S Kim, S Shin, T Kim, H Du, M Song, CW Lee, K Kim, S Cho, DH Seo, ... Carbon 98, 352-357, 2016 | 71 | 2016 |
Myoung-Jae LeeDaegu Gyeongubuk Institute of Science & Technology (DGIST)在 dgist.ac.kr 的电子邮件经过验证
