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Jongwoo Hong
Jongwoo Hong
在 skku.edu 的电子邮件经过验证
标题
引用次数
引用次数
年份
Effect of different pulse modes during Cl2/Ar inductively coupled plasma etching on the characteristics of nanoscale silicon trench formation
HJ Kim, L Wen, D San Kim, KH Kim, JW Hong, WJ Chang, S Namgoong, ...
Applied Surface Science 596, 153604, 2022
102022
Radio frequency induction welding of silver nanowire networks for transparent heat films
J Oh, L Wen, H Tak, H Kim, G Kim, J Hong, W Chang, D Kim, G Yeom
Materials 14 (16), 4448, 2021
42021
Effect of various pulse plasma techniques on TiO2 etching for metalens formation
JW Hong, YH Kim, HJ Kim, HW Tak, KD Bae, JY Lee, HS Bae, YS Kim, ...
Vacuum 212, 111978, 2023
32023
Etched characteristics of nanoscale TiO2 using C4F8-based and BCl3-based gases
JW Hong, YH Kim, HJ Kim, HW Tak, SN Goong, SB Kim, KD Bae, JY Lee, ...
Materials Science in Semiconductor Processing 164, 107617, 2023
12023
Indium tin oxide etch characteristics using CxH2x+ 2 (x= 1, 2, 3)/Ar
JW Hong, HM Cho, YG Jeong, YJ Yeo, JE Kang, HJ Kim, HW Tak, ...
Materials Science in Semiconductor Processing 160, 107395, 2023
12023
Study on etch characteristics of magnetic tunnel junction materials using rf-biased H2/NH3 reactive ion beam
YE Kim, DS Kim, YJ Jang, HS Gil, HS Jeon, JW Hong, IH Kim, C Kim, ...
Journal of Vacuum Science & Technology A 41 (3), 2023
12023
Reactive ion etching of indium gallium zinc oxide (IGZO) and chamber cleaning using low global warming potential gas
JW Hong, HW Tak, NI Cho, HJ Eoh, CH Kim, JW Jeong, KL Kim, HJ Yoo, ...
Applied Surface Science, 160692, 2024
2024
ATOMIC LAYER DEPOSITION DEVICE USING MULTIPLE PULSES TO FILL GAP OF SEMICONDUCTOR STRUCTURE WITH HIGH ASPECT RATIO AND ATOMIC LAYER DEPOSITION METHOD USING THE SAME
GY Yeom, HG Kim, HW Tak, JW Hong, JE Kang
US Patent App. 18/534,250, 2024
2024
Plasma etching method and plasma etching device
GY Yeom, W Chang, HJ Kim, JE Kang, SNAM GOONG, JW Hong
US Patent App. 18/370,444, 2024
2024
Meta-optical device and method of manufacturing metasurface
J Lee, Y Geunyoung, KIM Heeju, J Hong, KIM Yeonhee, BAE Kideok, ...
US Patent App. 17/724,861, 2023
2023
Etch Characteristics of Low-K Materials Using CF3I/C4F8/Ar/O2 Inductively Coupled Plasmas
JW Hong, HW Tak, YH Choi, HJ Kim, DW Kim, GY Yeom
Science of Advanced Materials 14 (7), 1258-1264, 2022
2022
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