| Layered perovskites enhanced perovskite photodiodes R Li, Y Xu, W Li, Y Li, J Peng, M Xu, Q Lin The Journal of Physical Chemistry Letters 12 (6), 1726-1733, 2021 | 34 | 2021 |
| A review of ultrawide bandgap materials: properties, synthesis and devices M Xu, D Wang, K Fu, DH Mudiyanselage, H Fu, Y Zhao Oxford Open Materials Science 2 (1), itac004, 2022 | 23 | 2022 |
| Toward high efficiency at high temperatures: Recent progress and prospects on InGaN-based solar cells Y Zhao, M Xu, X Huang, J Lebeau, T Li, D Wang, H Fu, K Fu, X Wang, ... Materials Today Energy 31, 101229, 2023 | 16 | 2023 |
| Properties and device performance of BN thin films grown on GaN by pulsed laser deposition A Biswas, M Xu, K Fu, J Zhou, R Xu, AB Puthirath, JA Hachtel, C Li, ... Applied Physics Letters 121 (9), 2022 | 8 | 2022 |
| GaN-based threshold switching behaviors at high temperatures enabled by interface engineering for harsh environment memory applications K Fu, S Luo, H Fu, K Hatch, SR Alugubelli, H Liu, T Li, M Xu, Z Mei, Z He, ... IEEE Transactions on Electron Devices, 2023 | 7 | 2023 |
| Investigation of vertical GaN-on-GaN p–n diode with regrown p-GaN for operation in Venus and other extreme environments S Luo, K Fu, Q Xie, M Yuan, G Gao, H Guo, R Xu, N Giles, T Li, Z Mei, ... Applied Physics Letters 123 (24), 2023 | 4 | 2023 |
| Vertical β-Ga2O3 metal–insulator–semiconductor diodes with an ultrathin boron nitride interlayer M Xu, A Biswas, T Li, Z He, S Luo, Z Mei, J Zhou, C Chang, AB Puthirath, ... Applied Physics Letters 123 (23), 2023 | 4 | 2023 |
| Understanding the Breakdown Behavior of Ultrawide‐Bandgap Boron Nitride Power Diodes Using Device Modeling Z He, K Fu, M Xu, J Zhou, T Li, Y Zhao physica status solidi (RRL)–Rapid Research Letters, 2200397, 2023 | 4 | 2023 |
| Reduced trap state density in AlGaN/GaN HEMTs with low-temperature CVD-grown BN gate dielectric Z He, X Zhang, TS Pieshkov, AE Yekta, T Terlier, DH Mudiyanselage, ... Applied Physics Letters 125 (4), 2024 | | 2024 |
| GaN E-mode Complementary Transistors Based on a GaN-on-Si Platform Operational at 350° C S Luo, C Chang, Q Xie, T Li, M Xu, Z He, T Palacios, Y Zhao 2024 Device Research Conference (DRC), 1-2, 2024 | | 2024 |
| Characterizations of two-photon absorption process induced by defects in aluminum nitride using Z-scan method J Zhou, T Li, X Zhao, X Zhang, J Doumani, M Xu, Z He, S Luo, Z Mei, ... Semiconductor Science and Technology, 2024 | | 2024 |
| Modulation of dielectric properties of hexagonal/cubic boron nitride composites M Xu, Z He, A Biswas, S Luo, T Li, C Chang, C Li, B Gao, R Vajtai, P Dai, ... Applied Physics Letters 124 (19), 2024 | | 2024 |
| Picosecond magneto-optic thermometry measurements of nanoscale thermal transport in AlN thin films F Angeles, S Khan, VH Ortiz, M Xu, S Luo, DH Mudiyanselage, H Fu, ... APL Materials 11 (6), 2023 | | 2023 |
| Top-Down Fabrication of Diamond Nanostructures A BISWAS, C Li, T Pieshkov, Z Mei, M Xu, T Li, J Murukeshan, R Vajtai, ... Available at SSRN 4755147, 0 | | |
Yuji ZhaoProfessor, Electrical and Computer Engineering, Rice University在 rice.edu 的电子邮件经过验证
