Dr. Aminul Islam 个人学术档案

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	总计	2019 年至今
引用	2442	1774
h 指数	25	22
i10 指数	61	49

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Mohammad HasanDepartment of Electronics Engineering, Aligarh Muslim University在 amu.ac.in 的电子邮件经过验证
Dr. Vikash KumarAssistant Professor在 ieee.org 的电子邮件经过验证
Amit Krishna Dwivedi, PhDAssistant Professor, University of Warwick, Coventry, UK在 ieee.org 的电子邮件经过验证
Rishab MehraApple Inc, The University of Texas at Austin在 utexas.edu 的电子邮件经过验证
Dr. Manisha GuduriSchool of Computing and Informatics, University of Louisiana at Lafayette在 ieee.org 的电子邮件经过验证
Santashraya PrasadBirla Insitute Of technology在 bitmesra.ac.in 的电子邮件经过验证
M. W. AkramDept. of ECE, Jamia Millia Islamia, New Delhi在 jmi.ac.in 的电子邮件经过验证
Dr. Sachin Dattatray PableHOD Electronics and Telecommunication. Government Polytechnic在 gov.in 的电子邮件经过验证
Anumita SenguptaIndian Institute of Technology Kharagpur在 iitkgp.ac.in 的电子邮件经过验证
Sarika TyagiResearch Scholar I PhD Student at UNSW, Sydney在 student.unsw.edu.au 的电子邮件经过验证
Dr. Mohd Ajmal KafeelAssociate Professor, University Women's Polytechnic, Aligarh Muslim University, AMU, Aligarh在 amu.ac.in 的电子邮件经过验证
Nitin AnandUniversity of Wisconsin, Madison在 wisc.edu 的电子邮件经过验证
Abhijeet PasumarthyNvidia, Qualcomm, UC San Diego, BIT Mesra在 nvidia.com 的电子邮件经过验证
Sudip KunduAssistant Professor of Electronics and Communication Engg, National Institute of Technology Rourkela在 nitrkl.ac.in 的电子邮件经过验证
Tughrul ArslanUniversity of Edinburgh在 ed.ac.uk 的电子邮件经过验证
Prashant GuptaNXP Semiconductors在 nxp.com 的电子邮件经过验证
Debosmit MajumderEngineer at Qualcomm在 eng.ucsd.edu 的电子邮件经过验证
vivek agarwalProfessor of Department of Electrical Engg, Indian Institute of Technology-Bombay在 ee.iitb.ac.in 的电子邮件经过验证
Shree Prakash TiwariProfessor, Department of Electrical Engineering, Indian Institute of Technology Jodhpur在 iitj.ac.in 的电子邮件经过验证
Dr. Vijay NathBirla Institute of Technology, Mesra在 bitmesra.ac.in 的电子邮件经过验证

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Dr. Aminul Islam

Associate Professor, Birla Institute of Technology (Deemed to be University), Mesra, Ranchi, India

在 ieee.org 的电子邮件经过验证 - 首页

Spintronics Nanoelectronics SRAM MRAM RRAM


标题按引用次数排序按年份排序按标题排序	引用次数引用次数	年份
Leakage characterization of 10T SRAM cell A Islam, M Hasan IEEE transactions on electron devices 59 (3), 631-638, 2012	189	2012
Variation tolerant differential 8T SRAM cell for ultralow power applications S Pal, A Islam IEEE transactions on computer-aided design of integrated circuits and …, 2015	137	2015
A technique to mitigate impact of process, voltage and temperature variations on design metrics of SRAM Cell A Islam, M Hasan Microelectronics Reliability 52 (2), 405-411, 2012	117	2012
9-T SRAM cell for reliable ultralow-power applications and solving multibit soft-error issue S Pal, A Islam IEEE Transactions on Device and Materials Reliability 16 (2), 172-182, 2016	93	2016
Optimized design of a 32-nm CNFET-based low-power ultrawideband CCII A Imran, M Hasan, A Islam, SA Abbasi IEEE transactions on Nanotechnology 11 (6), 1100-1109, 2012	72	2012
Characterization of half-select free write assist 9T SRAM cell S Pal, S Bose, WH Ki, A Islam IEEE transactions on electron devices 66 (11), 4745-4752, 2019	62	2019
Variability aware low leakage reliable SRAM cell design technique A Islam, M Hasan Microelectronics reliability 52 (6), 1247-1252, 2012	62	2012
Half-select-free low-power dynamic loop-cutting write assist SRAM cell for space applications S Pal, S Bose, WH Ki, A Islam IEEE Transactions on Electron Devices 67 (1), 80-89, 2019	51	2019
Highly stable low power radiation hardened memory-by-design SRAM for space applications S Pal, DD Sri, WH Ki, A Islam IEEE Transactions on Circuits and Systems II: Express Briefs 68 (6), 2147-2151, 2020	47	2020
A highly stable reliable SRAM cell design for low power applications S Pal, S Bose, WH Ki, A Islam Microelectronics Reliability 105, 113503, 2020	46	2020
Design of power-and variability-aware nonvolatile RRAM cell using memristor as a memory element S Pal, S Bose, WH Ki, A Islam IEEE Journal of the Electron Devices Society 7, 701-709, 2019	45	2019
Design of soft-error-aware SRAM with multi-node upset recovery for aerospace applications S Pal, S Mohapatra, WH Ki, A Islam IEEE Transactions on Circuits and Systems I: Regular Papers 68 (6), 2470-2480, 2021	43	2021
Soft-error resilient read decoupled SRAM with multi-node upset recovery for space applications S Pal, DD Sri, WH Ki, A Islam IEEE Transactions on Electron Devices 68 (5), 2246-2254, 2021	43	2021
Transmission gate‐based 9T SRAM cell for variation resilient low power and reliable internet of things applications S Pal, V Gupta, WH Ki, A Islam IET Circuits, Devices & Systems 13 (5), 584-595, 2019	43	2019
A 2.5 GHz Low Power, High- , Reliable Design of Active Bandpass Filter V Kumar, R Mehra, A Islam IEEE Transactions on Device and Materials Reliability 17 (1), 229-244, 2017	43	2017
Variation resilient subthreshold SRAM cell design technique A Islam, M Hasan, T Arslan International Journal of Electronics 99 (9), 1223-1237, 2012	41	2012
Circuit‐level design technique to mitigate impact of process, voltage and temperature variations in complementary metal‐oxide semiconductor full adder cells V Dokania, A Islam IET Circuits, Devices & Systems 9 (3), 204-212, 2015	40	2015
Floating active inductor based Class-C VCO with 8 digitally tuned sub-bands R Mehra, V Kumar, A Islam AEU-International Journal of Electronics and Communications 83, 1-10, 2018	37	2018
Optimization of SiC UMOSFET structure for improvement of breakdown voltage and ON-resistance D Bharti, A Islam IEEE Transactions on Electron Devices 65 (2), 615-621, 2017	35	2017
Design of 10T full adder cell for ultralow-power applications V Dokania, R Verma, M Guduri, A Islam Ain Shams Engineering Journal 9 (4), 2363-2372, 2018	31	2018

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