| Monte Carlo simulation of single event effects RA Weller, MH Mendenhall, RA Reed, RD Schrimpf, KM Warren, ... IEEE Transactions on Nuclear Science 57 (4), 1726-1746, 2010 | 285 | 2010 |
| Impact of low-energy proton induced upsets on test methods and rate predictions BD Sierawski, JA Pellish, RA Reed, RD Schrimpf, KM Warren, RA Weller, ... IEEE Transactions on Nuclear Science 56 (6), 3085-3092, 2009 | 225 | 2009 |
| The contribution of nuclear reactions to heavy ion single event upset cross-section measurements in a high-density SEU hardened SRAM KM Warren, RA Weller, MH Mendenhall, RA Reed, DR Ball, CL Howe, ... IEEE transactions on nuclear science 52 (6), 2125-2131, 2005 | 198 | 2005 |
| Radiation effects in advanced multiple gate and silicon-on-insulator transistors E Simoen, M Gaillardin, P Paillet, RA Reed, RD Schrimpf, ML Alles, ... IEEE Transactions on Nuclear Science 60 (3), 1970-1991, 2013 | 152 | 2013 |
| Impact of heavy ion energy and nuclear interactions on single-event upset and latchup in integrated circuits PE Dodd, JR Schwank, MR Shaneyfelt, JA Felix, P Paillet, ... IEEE Transactions on Nuclear Science 54 (6), 2303-2311, 2007 | 147 | 2007 |
| Muon-induced single event upsets in deep-submicron technology BD Sierawski, MH Mendenhall, RA Reed, MA Clemens, RA Weller, ... IEEE Transactions on Nuclear Science 57 (6), 3273-3278, 2010 | 145 | 2010 |
| Impact of ion energy and species on single event effects analysis RA Reed, RA Weller, MH Mendenhall, JM Lauenstein, KM Warren, ... IEEE Transactions on Nuclear Science 54 (6), 2312-2321, 2007 | 141 | 2007 |
| Multiple-bit upset in 130 nm CMOS technology AD Tipton, JA Pellish, RA Reed, RD Schrimpf, RA Weller, MH Mendenhall, ... IEEE Transactions on Nuclear Science 53 (6), 3259-3264, 2006 | 140 | 2006 |
| A single-event-hardened phase-locked loop fabricated in 130 nm CMOS TD Loveless, LW Massengill, BL Bhuva, WT Holman, RA Reed, ... IEEE transactions on nuclear science 54 (6), 2012-2020, 2007 | 136 | 2007 |
| Heavy ion and proton-induced single event multiple upset RA Reed, MA Carts, PW Marshall, CJ Marshall, O Musseau, PJ McNulty, ... IEEE Transactions on Nuclear Science 44 (6), 2224-2229, 1997 | 134 | 1997 |
| Effect of well and substrate potential modulation on single event pulse shape in deep submicron CMOS S DasGupta, AF Witulski, BL Bhuva, ML Alles, RA Reed, OA Amusan, ... IEEE Transactions on Nuclear Science 54 (6), 2407-2412, 2007 | 131 | 2007 |
| The effect of layout topology on single-event transient pulse quenching in a 65 nm bulk CMOS process JR Ahlbin, MJ Gadlage, DR Ball, AW Witulski, BL Bhuva, RA Reed, ... IEEE Transactions on Nuclear Science 57 (6), 3380-3385, 2010 | 120 | 2010 |
| Single event effects in circuit-hardened SiGe HBT logic at gigabit per second data rates PW Marshall, MA Carts, A Campbell, D McMorrow, S Buchner, R Stewart, ... IEEE Transactions on Nuclear Science 47 (6), 2669-2674, 2000 | 119 | 2000 |
| Scaling trends in SET pulse widths in sub-100 nm bulk CMOS processes MJ Gadlage, JR Ahlbin, B Narasimham, BL Bhuva, LW Massengill, ... IEEE Transactions on Nuclear Science 57 (6), 3336-3341, 2010 | 118 | 2010 |
| Mitigation techniques for single-event-induced charge sharing in a 90-nm bulk CMOS process OA Amusan, LW Massengill, MP Baze, BL Bhuva, AF Witulski, JD Black, ... IEEE Transactions on device and Materials Reliability 9 (2), 311-317, 2009 | 117 | 2009 |
| Autonomous bit error rate testing at multi-gbit/s rates implemented in a 5AM SiGe circuit for radiation effects self test (CREST) P Marshall, M Carts, S Currie, R Reed, B Randall, K Fritz, K Kennedy, ... IEEE transactions on nuclear science 52 (6), 2446-2454, 2005 | 111 | 2005 |
| Characterizing SRAM single event upset in terms of single and multiple node charge collection JD Black, DR Ball Ii, WH Robinson, DM Fleetwood, RD Schrimpf, ... IEEE Transactions on Nuclear Science 55 (6), 2943-2947, 2008 | 110 | 2008 |
| Emerging radiation hardness assurance (RHA) issues: a NASA approach for space flight programs KA LaBel, AH Johnston, JL Barth, RA Reed, CE Barnes IEEE Transactions on Nuclear Science 45 (6), 2727-2736, 1998 | 109 | 1998 |
| Fin-width dependence of ionizing radiation-induced subthreshold-swing degradation in 100-nm-gate-length FinFETs F El Mamouni, EX Zhang, RD Schrimpf, DM Fleetwood, RA Reed, ... IEEE Transactions on Nuclear Science 56 (6), 3250-3255, 2009 | 108 | 2009 |
| Single-event effects ground testing and on-orbit rate prediction methods: the past, present, and future RA Reed, J Kinnison, JC Pickel, S Buchner, PW Marshall, S Kniffin, ... IEEE Transactions on Nuclear Science 50 (3), 622-634, 2003 | 107 | 2003 |
Ron SchrimpfProfessor of Electrical Engineering, Vanderbilt University在 vanderbilt.edu 的电子邮件经过验证
