| Highly collimated electron beams from double-gate field emitter arrays with large collimation gate apertures P Helfenstein, E Kirk, K Jefimovs, T Vogel, C Escher, HW Fink, S Tsujino Applied Physics Letters 98 (6), 2011 | 42 | 2011 |
| RESCAN: an actinic lensless microscope for defect inspection of EUV reticles I Mochi, P Helfenstein, I Mohacsi, R Rajeev, D Kazazis, S Yoshitake, ... Journal of Micro/Nanolithography, MEMS, and MOEMS 16 (4), 041003-041003, 2017 | 37 | 2017 |
| Electron beam collimation with a 40 000 tip metallic double-gate field emitter array and in-situ control of nanotip sharpness distribution P Helfenstein, VA Guzenko, HW Fink, S Tsujino Journal of Applied Physics 113 (4), 2013 | 33 | 2013 |
| Beam drift and partial probe coherence effects in EUV reflective-mode coherent diffractive imaging P Helfenstein, R Rajeev, I Mochi, A Kleibert, CAF Vaz, Y Ekinci Optics Express 26 (9), 12242-12256, 2018 | 28 | 2018 |
| Collimated field emission beams from metal double-gate nanotip arrays optically excited via surface plasmon resonance P Helfenstein, A Mustonen, S Tsujino Applied Physics Express 6 (11), 114301, 2013 | 26 | 2013 |
| Scanning coherent diffractive imaging methods for actinic extreme ultraviolet mask metrology P Helfenstein, I Mohacsi, R Rajeev, Y Ekinci Journal of Micro/Nanolithography, MEMS, and MOEMS 15 (3), 034006-034006, 2016 | 23 | 2016 |
| Towards a stand-alone high-throughput EUV actinic photomask inspection tool: RESCAN R Rajendran, I Mochi, P Helfenstein, I Mohacsi, S Redford, A Mozzanica, ... Metrology, Inspection, and Process Control for Microlithography XXXI 10145 …, 2017 | 22 | 2017 |
| Fabrication of metallic double-gate field emitter arrays and their electron beam collimation characteristics P Helfenstein, K Jefimovs, E Kirk, C Escher, HW Fink, S Tsujino Journal of Applied Physics 112 (9), 2012 | 22 | 2012 |
| Actinic inspection of EUV reticles with arbitrary pattern design I Mochi, P Helfenstein, R Rajeev, S Fernandez, D Kazazis, S Yoshitake, ... International Conference on Extreme Ultraviolet Lithography 2017 10450, 28-37, 2017 | 20 | 2017 |
| Field-emission characteristics of molded molybdenum nanotip arrays with stacked collimation gate electrodes S Tsujino, P Helfenstein, E Kirk, T Vogel, C Escher, HW Fink IEEE electron device letters 31 (9), 1059-1061, 2010 | 20 | 2010 |
| High-density large-scale field emitter arrays for X-ray free electron laser cathodes VA Guzenko, A Mustonen, P Helfenstein, E Kirk, S Tsujino Microelectronic engineering 111, 114-117, 2013 | 19 | 2013 |
| Absorber and phase defect inspection on EUV reticles using RESCAN I Mochi, S Fernandez, R Nebling, U Locans, P Helfenstein, R Rajeev, ... Extreme Ultraviolet (EUV) Lithography X 10957, 211-218, 2019 | 15 | 2019 |
| Coherent diffractive imaging methods for semiconductor manufacturing P Helfenstein, I Mochi, R Rajeev, S Fernandez, Y Ekinci Advanced Optical Technologies 6 (6), 439-448, 2017 | 13 | 2017 |
| Scanning scattering contrast microscopy for actinic EUV mask inspection I Mohacsi, P Helfenstein, R Rajendran, Y Ekinci Metrology, Inspection, and Process Control for Microlithography XXX 9778 …, 2016 | 13 | 2016 |
| Experimental evaluation of the impact of carbon nanotube EUV pellicles on reticle imaging I Mochi, MY Timmermans, EE Gallagher, M Mariano, I Pollentier, ... Journal of Micro/Nanolithography, MEMS, and MOEMS 18 (1), 014002-014002, 2019 | 10 | 2019 |
| Through-pellicle inspection of EUV masks I Mochi, R Rajeev, P Helfenstein, S Fernandez, D Kazazis, Y Ekinci Extreme Ultraviolet (EUV) Lithography IX 10583, 343-349, 2018 | 9 | 2018 |
| Experimental evaluation of the impact of EUV pellicles on reticle imaging I Mochi, M Timmermans, E Gallagher, MM Juste, I Pollentier, R Rajeev, ... Photomask Technology 2018 10810, 126-134, 2018 | 7 | 2018 |
| Scanning coherent scattering methods for actinic EUV mask inspection Y Ekinci, P Helfenstein, R Rajeev, I Mochi, I Mohacsi, J Gobrecht, ... Photomask Technology 2016 9985, 220-228, 2016 | 7 | 2016 |
| Scanning coherent diffractive imaging methods for actinic EUV mask metrology P Helfenstein, I Mohacsi, R Rajendran, Y Ekinci Extreme Ultraviolet (EUV) Lithography VII 9776, 406-411, 2016 | 7 | 2016 |
| Microelectron VA Guzenko, A Mustonen, P Helfenstein, E Kirk, S Tsujino Eng.(submitted), 0 | 7 | |
