| Fast-response flexible temperature sensors with atomically thin molybdenum disulfide A Daus, M Jaikissoon, AI Khan, A Kumar, RW Grady, KC Saraswat, E Pop Nano Letters 22 (15), 6135-6140, 2022 | 34 | 2022 |
| Toward Low-Temperature Solid-Source Synthesis of Monolayer MoS2 A Tang, A Kumar, M Jaikissoon, K Saraswat, HSP Wong, E Pop ACS Applied Materials & Interfaces 13 (35), 41866-41874, 2021 | 31 | 2021 |
| Growth and characterization of epitaxial aluminum layers on gallium-arsenide substrates for superconducting quantum bits J Tournet, D Gosselink, GX Miao, M Jaikissoon, D Langenberg, ... Superconductor Science and Technology 29 (6), 064004, 2016 | 11 | 2016 |
| Temperature monitoring of narrow bandgap semiconductors MC Tam, Y Shi, D Gosselink, M Jaikissoon, ZR Wasilewski Journal of Vacuum Science & Technology B 35 (2), 2017 | 8 | 2017 |
| Imaging the electron charge density in monolayer MoS2 at the Ångstrom scale J Martis, S Susarla, A Rayabharam, C Su, T Paule, P Pelz, C Huff, X Xu, ... Nature communications 14 (1), 4363, 2023 | 6 | 2023 |
| Mobility Enhancement of Monolayer MoS2 Transistors using Tensile-Stressed Silicon Nitride Capping Layers M Jaikissoon, JA Yang, KM Neilson, E Pop, KC Saraswat 2022 Device Research Conference (DRC), 1-2, 2022 | 4 | 2022 |
| 3D-stacked strained SiGe/Ge gate-all-around (GAA) structure fabricated by 3D Ge condensation J Suh, AC Meng, M Jaikissoon, M Braun, TR Kim, AF Marshall, A Pakzad, ... 2019 Device Research Conference (DRC), 249-250, 2019 | 4 | 2019 |
| CMOS-compatible Strain Engineering for High-Performance Monolayer Semiconductor Transistors M Jaikissoon, Ç Köroğlu, JA Yang, KM Neilson, KC Saraswat, E Pop arXiv preprint arXiv:2405.09792, 2024 | 2 | 2024 |
| Ultrathin Gate Dielectric Enabled by Nanofog Aluminum Oxide on Monolayer MoS2 JS Ko, Z Zhang, S Lee, M Jaikissoon, RKA Bennett, K Kim, AC Kummel, ... ESSDERC 2023-IEEE 53rd European Solid-State Device Research Conference …, 2023 | 1 | 2023 |
| Lithographic Damage to Two Dimensional Materials Probed by Photoluminescence and Raman Spectroscopy K Neilson, M Tie, JS Ko, M Jaikissoon, J Yang, R Chen, A Majumdar, ... APS March Meeting Abstracts 2023, D34. 014, 2023 | 1 | 2023 |
| Nanoscale MoS2 Transistors on Polyimide for Radio-Frequency Operation E Reato, P Palacios, JA Yang, S Wahid, M Jaikissoon, JS Ko, A Daus, ... 2024 Device Research Conference (DRC), 1-2, 2024 | | 2024 |
| Strain Induced by Evaporated-Metal Contacts on Monolayer MoS2 Transistors M Jaikissoon, E Pop, KC Saraswat IEEE Electron Device Letters, 2024 | | 2024 |
| Contact-induced Strain for Enhanced Performance in Monolayer WS2 Transistors L Hoang, M Jaikissoon, Z Zhang, K Saraswat, E Pop, A Mannix Bulletin of the American Physical Society, 2024 | | 2024 |
| Local Back-Gate Monolayer MoS2 Transistors with Channel Lengths Down to 50 nm and EOT ∼ 1 nm Showing Improved using Post-Metal Anneal M Jaikissoon, JS Ko, E Pop, KC Saraswat 2023 Device Research Conference (DRC), 1-2, 2023 | | 2023 |
| Cmos-Compatible Strain Engineering and Device Scaling of Monolayer Molybdenum Disulfide Transistors M Jaikissoon Stanford University, 2023 | | 2023 |
| Growth of single-crystal Al layers on GaAs and Si substrates for microwave superconducting resonators J Tournet, D Gosselink, M Jaikissoon, GX Miao, D Langenberg, ... APS March Meeting Abstracts 2016, G1. 271, 2016 | | 2016 |
Denise GosselinkUniversity of Waterloo - Waterloo Institute for Nanotechnology在 uwaterloo.ca 的电子邮件经过验证
Denise GosselinkUniversity of Waterloo - Waterloo Institute for Nanotechnology在 uwaterloo.ca 的电子邮件经过验证