| Identification and compensation of Preisach hysteresis models for magnetostrictive actuators C Natale, F Velardi, C Visone Physica B: Condensed Matter 306 (1-4), 161-165, 2001 | 174 | 2001 |
| Analysis of heavy ion irradiation induced thermal damage in SiC Schottky diodes C Abbate, G Busatto, P Cova, N Delmonte, F Giuliani, F Iannuzzo, ... IEEE Transactions on Nuclear Science 62 (1), 202-209, 2015 | 61 | 2015 |
| Gate damages induced in SiC power MOSFETs during heavy-ion irradiation—Part I C Abbate, G Busatto, D Tedesco, A Sanseverino, L Silvestrin, F Velardi, ... IEEE Transactions on Electron Devices 66 (10), 4235-4242, 2019 | 57 | 2019 |
| Modelling and compensation of hysteresis for magnetostrictive actuators C Natale, F Velardi, C Visone 2001 IEEE/ASME International Conference on Advanced Intelligent Mechatronics …, 2001 | 45 | 2001 |
| Gate damages induced in SiC power MOSFETs during heavy-ion irradiation—Part II C Abbate, G Busatto, D Tedesco, A Sanseverino, F Velardi, J Wyss IEEE Transactions on Electron Devices 66 (10), 4243-4250, 2019 | 41 | 2019 |
| Experimental study of single event effects induced by heavy ion irradiation in enhancement mode GaN power HEMT C Abbate, G Busatto, F Iannuzzo, S Mattiazzo, A Sanseverino, L Silvestrin, ... Microelectronics Reliability 55 (9-10), 1496-1500, 2015 | 39 | 2015 |
| Thermal damage in SiC Schottky diodes induced by SE heavy ions C Abbate, G Busatto, P Cova, N Delmonte, F Giuliani, F Iannuzzo, ... Microelectronics Reliability 54 (9-10), 2200-2206, 2014 | 33 | 2014 |
| Experimental and numerical investigation about SEB/SEGR of power MOSFET G Busatto, A Porzio, F Velardi, F Iannuzzo, A Sanseverino, G Currò Microelectronics Reliability 45 (9-11), 1711-1716, 2005 | 31 | 2005 |
| High frequency, high efficiency, and high power density gan-based llc resonant converter: State-of-the-art and perspectives SA Mortazavizadeh, S Palazzo, A Amendola, E De Santis, D Di Ruzza, ... Applied Sciences 11 (23), 11350, 2021 | 26 | 2021 |
| Failure mechanisms of enhancement mode GaN power HEMTs operated in short circuit C Abbate, G Busatto, A Sanseverino, D Tedesco, F Velardi Microelectronics Reliability 100, 113454, 2019 | 25 | 2019 |
| MAGFET based current sensing for power integrated circuit G Busatto, R La Capruccia, F Iannuzzo, F Velardi, R Roncella Microelectronics Reliability 43 (4), 577-583, 2003 | 23 | 2003 |
| Experimental study of the instabilities observed in 650 V enhancement mode GaN HEMT during short circuit C Abbate, G Busatto, A Sanseverino, D Tedesco, F Velardi Microelectronics Reliability 76, 314-320, 2017 | 22 | 2017 |
| Radiation performance of new semiconductor power devices for the LHC experiment upgrades C Abbate, M Alderighi, S Baccaro, G Busatto, M Citterio, P Cova, ... POS PROCEEDINGS OF SCIENCE, 1-7, 2013 | 22 | 2013 |
| Power converters for future LHC experiments M Alderighi, M Citterio, M Riva, S Latorre, A Costabeber, A Paccagnella, ... Journal of Instrumentation 7 (03), C03012, 2012 | 22 | 2012 |
| Developments on DC/DC converters for the LHC experiment upgrades C Abbate, M Alderighi, S Baccaro, G Busatto, M Citterio, P Cova, ... Journal of Instrumentation 9 (02), C02017, 2014 | 21 | 2014 |
| Failure analysis of 650 V enhancement mode GaN HEMT after short circuit tests C Abbate, G Busatto, A Sanseverino, D Tedesco, F Velardi Microelectronics Reliability 88, 677-683, 2018 | 20 | 2018 |
| Non-destructive high temperature characterisation of high-voltage IGBTs G Busatto, B Cascone, L Fratelli, M Balsamo, F Iannuzzo, F Velardi Microelectronics Reliability 42 (9-11), 1635-1640, 2002 | 18 | 2002 |
| Power supply distribution system for calorimeters at the LHC beyond the nominal luminosity P Tenti, G Spiazzi, S Buso, M Riva, P Maranesi, F Belloni, P Cova, ... Journal of Instrumentation 6 (06), P06005, 2011 | 17 | 2011 |
| Heavy-ion induced single event gate damage in medium voltage power MOSFETs G Busatto, G Curro, F Iannuzzo, A Porzio, A Sanseverino, F Velardi IEEE Transactions on Nuclear Science 56 (6), 3573-3581, 2009 | 17 | 2009 |
| Progressive drain damage in SiC power MOSFETs exposed to ionizing radiation C Abbate, G Busatto, S Mattiazzo, A Sanseverino, L Silvestrin, D Tedesco, ... Microelectronics Reliability 88, 941-945, 2018 | 16 | 2018 |
