| Basic principles of STT-MRAM cell operation in memory arrays AV Khvalkovskiy, D Apalkov, S Watts, R Chepulskii, RS Beach, A Ong, ... Journal of Physics D: Applied Physics 46 (7), 074001, 2013 | 761 | 2013 |
| Spin-transfer torque magnetic random access memory (STT-MRAM) D Apalkov, A Khvalkovskiy, S Watts, V Nikitin, X Tang, D Lottis, K Moon, ... ACM Journal on Emerging Technologies in Computing Systems (JETC) 9 (2), 1-35, 2013 | 555 | 2013 |
| Advances and future prospects of spin-transfer torque random access memory E Chen, D Apalkov, Z Diao, A Driskill-Smith, D Druist, D Lottis, V Nikitin, ... IEEE Transactions on Magnetics 46 (6), 1873-1878, 2010 | 510 | 2010 |
| Matching domain-wall configuration and spin-orbit torques for efficient domain-wall motion AV Khvalkovskiy, V Cros, D Apalkov, V Nikitin, M Krounbi, KA Zvezdin, ... Physical Review B—Condensed Matter and Materials Physics 87 (2), 020402, 2013 | 467 | 2013 |
| Near-field optical spectroscopy of localized excitons in strained CdSe quantum dots F Flack, N Samarth, V Nikitin, PA Crowell, J Shi, J Levy, DD Awschalom Physical review B 54 (24), R17312, 1996 | 214 | 1996 |
| Magnetic junctions having insertion layers and magnetic memories using the magnetic junctions R Chepulskyy, X Tang, D Apalkov, AV Khvalkovskiy, V Nikitin, MT Krounbi US Patent 9,130,155, 2015 | 138 | 2015 |
| Spatiotemporal near-field spin microscopy in patterned magnetic heterostructures J Levy, V Nikitin, JM Kikkawa, A Cohen, N Samarth, R Garcia, ... Physical review letters 76 (11), 1948, 1996 | 129 | 1996 |
| Fully integrated 54nm STT-RAM with the smallest bit cell dimension for high density memory application S Chung, KM Rho, SD Kim, HJ Suh, DJ Kim, HJ Kim, SH Lee, JH Park, ... 2010 International Electron Devices Meeting, 12.7. 1-12.7. 4, 2010 | 116 | 2010 |
| Latest advances and roadmap for in-plane and perpendicular STT-RAM A Driskill-Smith, D Apalkov, V Nikitin, X Tang, S Watts, D Lottis, K Moon, ... 2011 3rd IEEE International Memory Workshop (IMW), 1-3, 2011 | 109 | 2011 |
| Perpendicular magnetic write head having a magnetic write pole with a concave trailing edge DG Allen, A Baer, M Feldbaum, HC Guthrie, WD Hsiao, Y Hsu, M Jiang, ... US Patent 7,576,951, 2009 | 84 | 2009 |
| Comparison of scaling of in-plane and perpendicular spin transfer switching technologies by micromagnetic simulation D Apalkov, S Watts, A Driskill-Smith, E Chen, Z Diao, V Nikitin IEEE transactions on magnetics 46 (6), 2240-2243, 2010 | 66 | 2010 |
| Method and system for providing magnetic memories switchable using spin accumulation and selectable using magnetoelectric devices AV Khvalkovskiy, D Apalkov, V Nikitin, MT Krounbi US Patent 9,076,954, 2015 | 61 | 2015 |
| Size dependence of nanosecond-scale spin-torque switching in perpendicularly magnetized tunnel junctions T Devolder, A Le Goff, V Nikitin Physical Review B 93 (22), 224432, 2016 | 52 | 2016 |
| Zero-dimensional excitonic confinement in locally strained quantum wells V Nikitin, PA Crowell, JA Gupta, DD Awschalom, F Flack, N Samarth Applied physics letters 71 (9), 1213-1215, 1997 | 49 | 1997 |
| Spatial and temporal profiling of protrusion in magnetic recording heads V Nikitin, S Gider, J Tabib, D Hsiao, M Salo, G Sui, S Yuan, NA Satoh, ... IEEE transactions on magnetics 40 (1), 326-331, 2004 | 46 | 2004 |
| Femtosecond near‐field spin microscopy in digital magnetic heterostructures J Levy, V Nikitin, JM Kikkawa, DD Awschalom, N Samarth Journal of applied physics 79 (8), 6095-6100, 1996 | 46 | 1996 |
| Enhancement of data retention and write current scaling for sub-20nm STT-MRAM by utilizing dual interfaces for perpendicular magnetic anisotropy JH Park, Y Kim, WC Lim, JH Kim, SH Park, W Kim, KW Kim, JH Jeong, ... 2012 Symposium on VLSI Technology (VLSIT), 57-58, 2012 | 45 | 2012 |
| Progress and prospects of spin transfer torque random access memory E Chen, D Apalkov, A Driskill-Smith, A Khvalkovskiy, D Lottis, K Moon, ... IEEE transactions on magnetics 48 (11), 3025-3030, 2012 | 42 | 2012 |
| Method and system for providing dual magnetic tunneling junctions usable in spin transfer torque magnetic memories D Apalkov, V Nikitin, D Druist, SM Watts US Patent 8,159,866, 2012 | 40 | 2012 |
| Material developments and domain wall-based nanosecond-scale switching process in perpendicularly magnetized STT-MRAM cells T Devolder, JV Kim, J Swerts, S Couet, S Rao, W Kim, S Mertens, G Kar, ... IEEE Transactions on Magnetics 54 (2), 1-9, 2017 | 36 | 2017 |
Dmytro ApalkovSr. Principal Engineer/Sr. Director, Modeling, Samsung Semiconductor R&D在 samsung.com 的电子邮件经过验证
