| Forming‐free grain boundary engineered hafnium oxide resistive random access memory devices S Petzold, A Zintler, R Eilhardt, E Piros, N Kaiser, SU Sharath, T Vogel, ... Advanced Electronic Materials 5 (10), 1900484, 2019 | 77 | 2019 |
| Defect-stabilized substoichiometric polymorphs of hafnium oxide with semiconducting properties N Kaiser, T Vogel, A Zintler, S Petzold, A Arzumanov, E Piros, R Eilhardt, ... ACS Applied Materials & Interfaces 14 (1), 1290-1303, 2021 | 36 | 2021 |
| Analysis and simulation of the multiple resistive switching modes occurring in HfOx-based resistive random access memories using memdiodes S Petzold, E Miranda, SU Sharath, J Muñoz-Gorriz, T Vogel, E Piros, ... Journal of applied physics 125 (23), 2019 | 35 | 2019 |
| Tailoring the Switching Dynamics in Yttrium Oxide‐Based RRAM Devices by Oxygen Engineering: From Digital to Multi‐Level Quantization toward Analog Switching S Petzold, E Piros, R Eilhardt, A Zintler, T Vogel, N Kaiser, A Radetinac, ... Advanced Electronic Materials 6 (11), 2000439, 2020 | 31 | 2020 |
| Gradual reset and set characteristics in yttrium oxide based resistive random access memory S Petzold, E Piros, SU Sharath, A Zintler, E Hildebrandt, L Molina-Luna, ... Semiconductor Science and Technology 34 (7), 075008, 2019 | 30 | 2019 |
| Enhanced thermal stability of yttrium oxide-based RRAM devices with inhomogeneous Schottky-barrier E Piros, S Petzold, A Zintler, N Kaiser, T Vogel, R Eilhardt, C Wenger, ... Applied Physics Letters 117 (1), 2020 | 28 | 2020 |
| Role of Oxygen Defects in Conductive-Filament Formation in -Based Analog RRAM Devices as Revealed by Fluctuation Spectroscopy E Piros, M Lonsky, S Petzold, A Zintler, SU Sharath, T Vogel, N Kaiser, ... Physical Review Applied 14 (3), 034029, 2020 | 18 | 2020 |
| Defect-induced phase transition in hafnium oxide thin films: comparing heavy ion irradiation and oxygen-engineering effects T Vogel, N Kaiser, S Petzold, E Piros, N Guillaume, G Lefévre, ... IEEE Transactions on Nuclear Science 68 (8), 1542-1547, 2021 | 15 | 2021 |
| Crystal and electronic structure of oxygen vacancy stabilized rhombohedral hafnium oxide N Kaiser, YJ Song, T Vogel, E Piros, T Kim, P Schreyer, S Petzold, ... ACS Applied Electronic Materials 5 (2), 754-763, 2023 | 14 | 2023 |
| Structural and electrical response of emerging memories exposed to heavy ion radiation T Vogel, A Zintler, N Kaiser, N Guillaume, G Lefèvre, M Lederer, AL Serra, ... ACS nano 16 (9), 14463-14478, 2022 | 11 | 2022 |
| Controlling the formation of conductive pathways in memristive devices R Winkler, A Zintler, S Petzold, E Piros, N Kaiser, T Vogel, D Nasiou, ... Advanced Science 9 (33), 2201806, 2022 | 10 | 2022 |
| Heavy ion irradiation induced phase transitions and their impact on the switching behavior of ferroelectric hafnia M Lederer, T Vogel, T Kämpfe, N Kaiser, E Piros, R Olivo, T Ali, S Petzold, ... Journal of Applied Physics 132 (6), 2022 | 7 | 2022 |
| Magnetic field induced random pulse trains of magnetic and acoustic noises in martensitic single-crystal L Daróczi, E Piros, LZ Tóth, DL Beke Physical Review B 96 (1), 014416, 2017 | 6 | 2017 |
| Oxide thickness-dependent resistive switching characteristics of Cu/HfO2/Pt ECM devices T Kim, T Vogel, E Piros, D Nasiou, N Kaiser, P Schreyer, R Winkler, ... Applied Physics Letters 122 (2), 2023 | 5 | 2023 |
| Fast fitting of the dynamic memdiode model to the conduction characteristics of RRAM devices using convolutional neural networks FL Aguirre, E Piros, N Kaiser, T Vogel, S Petzold, J Gehrunger, T Oster, ... Micromachines 13 (11), 2002, 2022 | 5 | 2022 |
| Simulation of bipolar-type resistive switching devices using a recursive approach to the dynamic memdiode model E Miranda, E Piros, FL Aguirre, T Kim, P Schreyer, J Gehrunger, T Oster, ... IEEE Electron Device Letters, 2023 | 4 | 2023 |
| Heavy Ion Irradiation Hardening Study on 4kb arrays HfO2-based OxRAM N Guillaume, G Lefèvre, C Charpin-Nicolle, L Grenouillet, T Vogel, ... 2020 20th European Conference on Radiation and Its Effects on Components and …, 2020 | 2 | 2020 |
| Resistive Switching: Forming‐Free Grain Boundary Engineered Hafnium Oxide Resistive Random Access Memory Devices (Adv. Electron. Mater. 10/2019) S Petzold, A Zintler, R Eilhardt, E Piros, N Kaiser, SU Sharath, T Vogel, ... Advanced Electronic Materials 5 (10), 1970054, 2019 | 2 | 2019 |
| Revealing the quantum nature of the voltage-induced conductance changes in oxygen engineered yttrium oxide-based RRAM devices FL Aguirre, E Piros, N Kaiser, T Vogel, S Petzold, J Gehrunger, ... Scientific Reports 14 (1), 1122, 2024 | 1 | 2024 |
| Simulation of the effect of material properties on yttrium oxide memristor-based artificial neural networks F Aguirre, E Piros, N Kaiser, T Vogel, S Petzold, J Gehrunger, T Oster, ... APL Machine Learning 1 (3), 2023 | 1 | 2023 |
