Thermal stability enhancement in epitaxial alpha tin films by strain engineering H Song, J Yao, Y Ding, Y Gu, Y Deng, MH Lu, H Lu, YF Chen Advanced Engineering Materials 21 (10), 1900410, 2019 | 29 | 2019 |
Wafer-Scale and Topologically Nontrivial α- Films Grown on by Molecular-Beam Epitaxy Y Ding, H Song, J Huang, J Yao, Y Gu, L Wei, YB Chen, Y Deng, H Yuan, ... Physical Review Applied 17 (1), 014015, 2022 | 12 | 2022 |
Precursor solution-dependent secondary phase defects in CsPbBr 3 single crystal grown by inverse temperature crystallization Y Cheng, M Zhu, F Wang, R Bai, J Yao, W Jie, Y Xu Journal of Materials Chemistry A 9 (48), 27718-27726, 2021 | 12 | 2021 |
Characteristics of thin InAlAs digital alloy avalanche photodiodes W Wang, J Yao, J Wang, Z Deng, Z Xie, J Huang, H Lu, B Chen Optics Letters 46 (16), 3841-3844, 2021 | 10 | 2021 |
Multiple superconducting transitions in α-Sn/β-Sn mixed films grown by molecular beam epitaxy Y Ding, B Li, J Yao, H Song, L Wei, Y Lu, J Huang, H Yuan, H Lu, ... Journal of Vacuum Science & Technology A 41 (2), 2023 | 6 | 2023 |
Multiple carrier transport in high-quality α-Sn films grown on CdTe (001) by molecular beam epitaxy Y Ding, J Yao, Z Yuan, C Li, MH Lu, H Lu, YF Chen Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 39 (3 …, 2021 | 6 | 2021 |
Effective interface engineering for phonon manipulation in an Al/ErAs/GaAs system J Pan, X Fan, K Zhang, Z Geng, J Yao, Y Deng, J Zhou, XJ Yan, MH Lu, ... Materials Today Physics 28, 100897, 2022 | 4 | 2022 |
Large tunable bandgaps in the InAs/AlAs strain-compensated short-period superlattices grown by molecular beam epitaxy J Yao, R Pan, W Wang, C Li, B Chen, H Lu, YF Chen Applied Physics Letters 118 (25), 252103, 2021 | 4 | 2021 |
Interband transitions of InAs/AlAs Short-Period superlattices grown by molecular beam epitaxy L Yao, W Wang, J Yao, K Lu, H Lu, C Zheng, B Chen Journal of Crystal Growth 605, 127071, 2023 | 3 | 2023 |
Annealing induced carrier activation and PL enhancement in Ge-on-Si grown by low temperature MBE R Pan, Z Yuan, K Zhang, J Yao, C Li, M Lu, H Lu, YF Chen Journal of Crystal Growth 588, 126668, 2022 | 3 | 2022 |
Strain evolution and confinement effect in InAs/AlAs short-period superlattices studied by Raman spectroscopy Y Zhao, K Lu, J Yao, J Ning, B Chen, H Lu, C Zheng Scientific Reports 13 (1), 123, 2023 | 2 | 2023 |
Carrier localization effect in the photoluminescence of In composition engineered InAlAs random alloy J Yu, Y Zhao, S Li, J Yao, L Yao, J Ning, Y Jiang, H Lu, B Chen, C Zheng Journal of Luminescence 249, 119009, 2022 | 2 | 2022 |
High-speed InAlAs digital alloy avalanche photodiode W Wang, J Yao, L Li, H Ge, L Wang, L Zhu, Q Chen, H Lu, B Chen Applied Physics Letters 123 (19), 2023 | 1 | 2023 |
High-Speed Mid-Wave Infrared Uni-Traveling Carrier Photodetector With Inductive Peaked Dewar Packaging Z Shen, J Yao, J Huang, Z Dai, L Wang, F Liu, X Zou, B Peng, W Liu, H Lu, ... Journal of Lightwave Technology, 2023 | 1 | 2023 |
Quantum confinement and energy filtering effect enhancing the thermoelectric power factor of InGaAs with buried ErAs nanoparticles T Meng, X Zhang, J Yao, W Zhang, H Zhong, H Zhu, Y Zhang, H Zhang, ... Applied Physics Letters 125 (4), 2024 | | 2024 |
Room Temperature NUV‐To‐NIR Up‐and Down‐Conversion Photoluminescence in Erbium‐Doped GaAs Y Cheng, Z Zuo, J Yao, K Zhang, Y Lu, C Li, Y Deng, X Zhang, H Lu, ... Advanced Optical Materials 12 (4), 2301616, 2024 | | 2024 |
Large redshift in photoluminescence of InAs/AlAs short-period superlattices due to highly ordered lateral composition modulation J Yao, J Li, Q Zhang, Z Zuo, W Zhang, W Wang, C Li, B Chen, Y Deng, ... Journal of Vacuum Science & Technology A 41 (4), 2023 | | 2023 |
Epitaxial Growth of GaAs on Si (111) Controlled by Al/AlAs Interlayer. C Menglin, FAN Xing, Z Weiwei, YAO Jinshan, PAN Rui, LI Chen, ... Journal of Synthetic Crystals 51 (11), 2022 | | 2022 |