| Design and Experimental Study of 4H-SiC Trenched Junction Barrier Schottky Diodes R Na, W Jue, S Kuang IEEE Transactions on Electron Devices 61 (7), 2014 | 86 | 2014 |
| A SiC-based high power density single-phase inverter with in-series and in-parallel power decoupling method X Lyu, N Ren, Y Li, D Cao IEEE Journal of Emerging and Selected Topics in Power Electronics 4 (3), 893-901, 2016 | 77 | 2016 |
| An Analytical Model With 2-D Effects for 4H-SiC Trenched Junction Barrier Schottky Diodes R Na, S Kuang IEEE Transactions on Electron Devices 61 (12), 2014 | 46 | 2014 |
| Investigation on single pulse avalanche failure of SiC MOSFET and Si IGBT N Ren, H Hu, X Lyu, J Wu, H Xu, R Li, Z Zuo, K Wang, K Sheng Solid-State Electronics 152, 33-40, 2019 | 45 | 2019 |
| A 10kV/200A SiC MOSFET module with series-parallel hybrid connection of 1200V/50A dies Q Xiao, Y Yan, X Wu, N Ren, K Sheng 2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's …, 2015 | 42 | 2015 |
| 4H-SiC super-junction JFET: Design and experimental demonstration H Wang, C Wang, B Wang, N Ren, K Sheng IEEE Electron Device Letters 41 (3), 445-448, 2020 | 36 | 2020 |
| Accurate Analytical Switching-On Loss Model of SiC MOSFET Considering Dynamic Transfer Characteristic and Qgd Z Dong, X Wu, H Xu, N Ren, K Sheng IEEE Transactions on Power Electronics 35 (11), 12264-12273, 2020 | 34 | 2020 |
| Failure mechanism analysis of SiC MOSFETs in unclamped inductive switching conditions N Ren, KL Wang, J Wu, H Xu, K Sheng 2019 31st International Symposium on Power Semiconductor Devices and ICs …, 2019 | 34 | 2019 |
| 1.2-kV 4H-SiC merged PiN Schottky diode with improved surge current capability J Wu, N Ren, H Wang, K Sheng IEEE Journal of Emerging and Selected Topics in Power Electronics 7 (3 …, 2019 | 32 | 2019 |
| Optimization of high-density and high-efficiency switched-tank converter for data center applications X Lyu, Y Li, N Ren, C Nan, D Cao, S Jiang IEEE Transactions on Industrial Electronics 67 (2), 1626-1637, 2019 | 32 | 2019 |
| A recent review on silicon carbide power devices technologies K Sheng, N Ren, H Xu Proceedings of the CSEE 40 (6), 1741-1753, 2020 | 28 | 2020 |
| Investigation of 1200 V SiC MOSFETs’ surge reliability H Li, J Wang, N Ren, H Xu, K Sheng Micromachines 10 (7), 485, 2019 | 28 | 2019 |
| Investigation on single pulse avalanche failure of 900V SiC MOSFETs N Ren, H Hu, KL Wang, Z Zuo, R Li, K Sheng 2018 IEEE 30th International Symposium on Power Semiconductor Devices and …, 2018 | 28 | 2018 |
| Investigation on Surge Current Capability of 4H-SiC Trench-Gate MOSFETs in Third Quadrant Under Various VGS Biases Z Zhu, H Xu, L Liu, N Ren, K Sheng IEEE Journal of Emerging and Selected Topics in Power Electronics 9 (5 …, 2020 | 24 | 2020 |
| 1200-V 4H-SiC merged pin Schottky diodes with high avalanche capability L Liu, J Wu, N Ren, Q Guo, K Sheng IEEE Transactions on Electron Devices 67 (9), 3679-3684, 2020 | 21 | 2020 |
| Gate drive investigations of IGBT modules with SiC-Schottky freewheeling diodes N Ren, K Sheng, J Zhang, F Peng 2013 IEEE Energy Conversion Congress and Exposition, 2871-2876, 2013 | 18 | 2013 |
| A comparative study of switched-tank converter and cascaded voltage divider for 48-V data center application X Lyu, Y Li, N Ren, S Jiang, D Cao IEEE Journal of Emerging and Selected Topics in Power Electronics 8 (2 …, 2019 | 17 | 2019 |
| Instantaneous pulse power compensator for high-density single-phase inverters X Lyu, N Ren, D Cao IEEE Transactions on Power Electronics 34 (11), 10776-10785, 2019 | 17 | 2019 |
| Design and fabrication of 1.92 kV 4H-SiC super-junction SBD with wide-trench termination B Wang, H Wang, C Wang, N Ren, Q Guo, K Sheng IEEE Transactions on Electron Devices 68 (11), 5674-5681, 2021 | 14 | 2021 |
| A comparative study of silicon carbide merged PiN Schottky diodes with electrical-thermal coupled considerations J Wu, N Ren, Q Guo, K Sheng Materials 13 (11), 2669, 2020 | 13 | 2020 |
Xiaofeng LyuZhejiang University在 zju.edu.cn 的电子邮件经过验证
