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Yih-Ren Chang
Yih-Ren Chang
在 riken.jp 的电子邮件经过验证
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年份
High-mobility InSe transistors: the role of surface oxides
PH Ho, YR Chang, YC Chu, MK Li, CA Tsai, WH Wang, CH Ho, CW Chen, ...
ACS nano 11 (7), 7362-7370, 2017
2092017
Surface oxidation doping to enhance photogenerated carrier separation efficiency for ultrahigh gain indium selenide photodetector
YR Chang, PH Ho, CY Wen, TP Chen, SS Li, JY Wang, MK Li, CA Tsai, ...
ACS Photonics 4 (11), 2930-2936, 2017
462017
High-performance InSe transistors with ohmic contact enabled by nonrectifying barrier-type indium electrodes
YT Huang, YH Chen, YJ Ho, SW Huang, YR Chang, K Watanabe, ...
ACS applied materials & interfaces 10 (39), 33450-33456, 2018
432018
Precisely Controlled Ultrastrong Photoinduced Doping at Graphene-Heterostructures Assisted by Trap-State-Mediated Charge Transfer.
PH Ho, CH Chen, FY Shih, YR Chang, SS Li, WH Wang, MC Shih, ...
Advanced Materials (Deerfield Beach, Fla.) 27 (47), 7809-7815, 2015
432015
Tunable photoinduced carrier transport of a black phosphorus transistor with extended stability using a light-sensitized encapsulated layer
PH Ho, MK Li, R Sankar, FY Shih, SS Li, YR Chang, WH Wang, FC Chou, ...
ACS Photonics 3 (6), 1102-1108, 2016
242016
Atomic-step-induced screw-dislocation-driven spiral growth of SnS
YR Chang, N Higashitarumizu, H Kawamoto, FH Chu, CJ Lee, ...
Chemistry of Materials 33 (1), 186-194, 2020
172020
Thermodynamic perspective on the oxidation of layered materials and surface oxide amelioration in 2D devices
YR Chang, T Nishimura, K Nagashio
ACS Applied Materials & Interfaces 13 (36), 43282-43289, 2021
122021
Shift‐Current Photovoltaics Based on a Non‐Centrosymmetric Phase in In‐Plane Ferroelectric SnS
YR Chang, R Nanae, S Kitamura, T Nishimura, H Wang, Y Xiang, ...
Advanced Materials 35 (29), 2301172, 2023
82023
Wavelength dependence of polarization-resolved second harmonic generation from ferroelectric SnS few layers
R Moqbel, YR Chang, ZY Li, SH Kung, HY Cheng, CC Lee, K Nagashio, ...
2D Materials 10 (1), 015022, 2022
52022
Performance Enhancement of SnS/h-BN Heterostructure p-Type FET via the Thermodynamically Predicted Surface Oxide Conversion Method
YR Chang, T Nishimura, T Taniguchi, K Watanabe, K Nagashio
ACS Applied Materials & Interfaces 14 (17), 19928-19937, 2022
42022
Self-assembly nuclei with a preferred orientation at the extended hydrophobic surface toward textured growth of ZnO nanorods in aqueous chemical bath deposition
CH Yu, CC Lo, KH Chen, YR Chang, CW Chen, CY Wen
Nanotechnology 32 (17), 175603, 2021
22021
Room-temperature quantum emission from interface excitons in mixed-dimensional heterostructures
N Fang, YR Chang, S Fujii, D Yamashita, M Maruyama, Y Gao, CF Fong, ...
Nature Communications 15 (1), 2871, 2024
12024
Resonant exciton transfer in mixed-dimensional heterostructures for overcoming dimensional restrictions in optical processes
N Fang, YR Chang, D Yamashita, S Fujii, M Maruyama, Y Gao, CF Fong, ...
Nature communications 14 (1), 8152, 2023
12023
Self-aligned hybrid nanocavities using atomically thin materials
CF Fong, D Yamashita, N Fang, S Fujii, YR Chang, T Taniguchi, ...
ACS Photonics, 2023
2023
Mobility enhancement of p-SnS/h-BN heterostructure FET by Ti contact reaction
YR Chang, T Taniguchi, K Watanabe, T Nishimura, K Nagashio
JSAP Annual Meetings Extended Abstracts The 68th JSAP Spring Meeting 2021 …, 2021
2021
Atomic step induced spiral growth in PVD SnS
YR Chang, N Higashitarumizu, H Kawamoto, T Nishimura, K Nagashio
JSAP Annual Meetings Extended Abstracts The 81st JSAP Autumn Meeting 2020 …, 2020
2020
PVD growth of AA stacking SnS through screw dislocation induced by substrate edge steps
YR Chang, H Kawamoto, N Higashitarumizu, T Nishimura, K Nagashio
JSAP Annual Meetings Extended Abstracts The 67th JSAP Spring Meeting 2020 …, 2020
2020
Contact Engineering of High Performance Tri-layer Indium Selenide Field Effect Transistors: Metal Deposition Induced Surface Oxide Reduction
YR Chang
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