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Gourab Sabui
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年份
Wide-bandgap solid-state circuit breakers for DC power systems: Device and circuit considerations
ZJ Shen, G Sabui, Z Miao, Z Shuai
IEEE Transactions on Electron Devices 62 (2), 294-300, 2015
2002015
Design and analysis of DC solid-state circuit breakers using SiC JFETs
Z Miao, G Sabui, AM Roshandeh, ZJ Shen
IEEE Journal of Emerging and Selected Topics in Power Electronics 4 (3), 863-873, 2016
1212016
A self-powered ultra-fast DC solid state circuit breaker using a normally-on SiC JFET
Z Miao, G Sabui, A Chen, Y Li, ZJ Shen, J Wang, Z Shuai, A Luo, X Yin, ...
2015 IEEE Applied Power Electronics Conference and Exposition (APEC), 767-773, 2015
852015
Modeling and simulation of bulk gallium nitride power semiconductor devices
G Sabui, PJ Parbrook, M Arredondo-Arechavala, ZJ Shen
Aip Advances 6 (5), 2016
712016
A self-powered bidirectional DC solid state circuit breaker using two normally-on SiC JFETs
Z Miao, G Sabui, A Moradkhani, J Wang, Z Shuai, X Yin
2015 IEEE energy conversion congress and exposition (ECCE), 4119-4124, 2015
372015
Ultrafast autonomous solid state circuit breakers for shipboard DC power distribution
ZJ Shen, AM Roshandeh, Z Miao, G Sabui
2015 IEEE Electric Ship Technologies Symposium (ESTS), 299-305, 2015
352015
Gan nanowire Schottky barrier diodes
G Sabui, VZ Zubialevich, M White, P Pampili, PJ Parbrook, M McLaren, ...
IEEE Transactions on Electron Devices 64 (5), 2283-2290, 2017
222017
Analytical calculation of breakdown voltage for dielectric RESURF power devices
G Sabui, ZJ Shen
IEEE Electron Device Letters 38 (6), 767-770, 2017
142017
3-D TCAD simulation to optimize the trench termination design for higher and robust BVdss
Z Hossain, G Sabui, J Sellers, B Pratt, A Salih
2016 28th International Symposium on Power Semiconductor Devices and ICs …, 2016
122016
Simulation study of high voltage vertical GaN nanowire field effect transistors
G Sabui, VZ Zubialevich, P Pampili, M White, PJ Parbrook, M McLaren, ...
ECS Transactions 80 (7), 69, 2017
82017
Dense GaN nanocolumn arrays by hybrid top-down-regrow approach using nanosphere lithography
VZ Zubialevich, P Pampili, M McLaren, M Arredondo-Arechavala, G Sabui, ...
2018 IEEE 18th International Conference on Nanotechnology (IEEE-NANO), 1-3, 2018
52018
Dielectric RESURF as an alternative to shield RESURF for an improved and easy-to-manufacture low voltage trench MOSFETs
Z Hossain, G Sabui, ZJ Shen
2017 29th International Symposium on Power Semiconductor Devices and IC's …, 2017
42017
On the feasibility of further improving Figure of Merits (FOM) of low voltage power MOSFETs
G Sabui, ZJ Shen
2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's …, 2014
32014
Zener diodes and methods of manufacture
G Sabui, C Yupeng, U Sharma
US Patent App. 16/249,553, 2020
2020
Design considerations of vertical GaN nanowire Schottky barrier diodes
G Sabui, VZ Zubialevich, M White, P Pampili, PJ Parbrook, M McLaren, ...
2017 29th International Symposium on Power Semiconductor Devices and IC's …, 2017
2017
Gallium Nitride Nanostructured Power Semiconductor Devices
G Sabui
Illinois Institute of Technology, 2017
2017
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