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Yingying Wu(吴鹦鹰)
Yingying Wu(吴鹦鹰)
在 ufl.edu 的电子邮件经过验证
标题
引用次数
引用次数
年份
High-quality sandwiched black phosphorus heterostructure and its quantum oscillations
X Chen, Y Wu, Z Wu, Y Han, S Xu, L Wang, W Ye, T Han, Y He, Y Cai, ...
Nature communications 6 (1), 7315, 2015
5622015
Néel-type skyrmion in WTe2/Fe3GeTe2 van der Waals heterostructure
Y Wu, S Zhang, J Zhang, W Wang, YL Zhu, J Hu, G Yin, K Wong, C Fang, ...
Nature communications 11 (1), 3860, 2020
2852020
Universal low-temperature Ohmic contacts for quantum transport in transition metal dichalcogenides
S Xu, Z Wu, H Lu, Y Han, G Long, X Chen, T Han, W Ye, Y Wu, J Lin, ...
2D Materials 3 (2), 021007, 2016
1322016
Ubiquitous superconducting diode effect in superconductor thin films
Y Hou, F Nichele, H Chi, A Lodesani, Y Wu, MF Ritter, DZ Haxell, ...
Physical Review Letters 131 (2), 027001, 2023
1142023
Even–odd layer-dependent magnetotransport of high-mobility Q-valley electrons in transition metal disulfides
Z Wu, S Xu, H Lu, A Khamoshi, GB Liu, T Han, Y Wu, J Lin, G Long, Y He, ...
Nature communications 7 (1), 12955, 2016
1082016
Exchange-biasing topological charges by antiferromagnetism
QL He, G Yin, AJ Grutter, L Pan, X Che, G Yu, DA Gilbert, SM Disseler, ...
Nature communications 9 (1), 2767, 2018
822018
van der Waals Epitaxial Growth of Atomically Thin Bi2Se3 and Thickness-Dependent Topological Phase Transition
S Xu, Y Han, X Chen, Z Wu, L Wang, T Han, W Ye, H Lu, G Long, Y Wu, ...
Nano letters 15 (4), 2645-2651, 2015
682015
Odd-Integer Quantum Hall States and Giant Spin Susceptibility in -Type Few-Layer
S Xu, J Shen, G Long, Z Wu, Z Bao, CC Liu, X Xiao, T Han, J Lin, Y Wu, ...
Physical Review Letters 118 (6), 067702, 2017
602017
A van der Waals Interface Hosting Two Groups of Magnetic Skyrmions
Y Wu, B Francisco, W Wang, Y Zhang, C Wan, X Han, H Chi, Y Hou, ...
Advanced Materials, 202110583, 2022
562022
Large exchange splitting in monolayer graphene magnetized by an antiferromagnet
Y Wu, G Yin, L Pan, AJ Grutter, Q Pan, A Lee, DA Gilbert, JA Borchers, ...
Nature Electronics 3 (10), 604-611, 2020
502020
Observation of quantum anomalous Hall effect and exchange interaction in topological insulator/antiferromagnet heterostructure
L Pan, A Grutter, P Zhang, X Che, T Nozaki, A Stern, M Street, B Zhang, ...
Advanced Materials 32 (34), 2001460, 2020
322020
Termination switching of antiferromagnetic proximity effect in topological insulator
CY Yang, L Pan, AJ Grutter, H Wang, X Che, QL He, Y Wu, DA Gilbert, ...
Science Advances 6 (33), eaaz8463, 2020
302020
Detection of interlayer interaction in few-layer graphene
Z Wu, Y Han, J Lin, W Zhu, M He, S Xu, X Chen, H Lu, W Ye, T Han, Y Wu, ...
Physical Review B 92 (7), 075408, 2015
302015
Manipulating exchange bias in a van der Waals ferromagnet
Y Wu, W Wang, L Pan, KL Wang
Advanced Materials 34 (12), 2105266, 2022
252022
A fast transfer-free synthesis of high-quality monolayer graphene on insulating substrates by a simple rapid thermal treatment
Z Wu, Y Guo, Y Guo, R Huang, S Xu, J Song, H Lu, Z Lin, Y Han, H Li, ...
Nanoscale 8 (5), 2594-2600, 2016
252016
Negative Compressibility in Graphene-terminated Black Phosphorus Heterostructures
Y Wu, X Chen, Z Wu, S Xu, T Han, J Lin, S Brian, Y Cai, Y He, C Cheng, ...
Physical Review B 93 (3), 035455, 2016
202016
Probing the electronic states and impurity effects in black phosphorus vertical heterostructures
X Chen, L Wang, Y Wu, H Gao, Y Wu, G Qin, Z Wu, Y Han, S Xu, T Han, ...
2D Materials 3 (1), 015012, 2016
192016
Efficient Spin‐Orbit Torque Switching of Perpendicular Magnetization using Topological Insulators with High Thermal Tolerance
Q Pan, Y Liu, H Wu, P Zhang, H Huang, C Eckberg, X Che, Y Wu, B Dai, ...
Advanced Electronic Materials 8 (9), 2200003, 2022
152022
Investigation of the two-gap superconductivity in a few-layer -graphene heterojunction
T Han, J Shen, NFQ Yuan, J Lin, Z Wu, Y Wu, S Xu, L An, G Long, Y Wang, ...
Physical Review B 97 (6), 060505, 2018
142018
Induced Ising spin-orbit interaction in metallic thin films on monolayer
Y Wu, JJ He, T Han, S Xu, Z Wu, J Lin, T Zhang, Y He, N Wang
Physical Review B 99 (12), 121406, 2019
132019
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