| High-stability Er/sup 3+/-doped superfluorescent fiber sources DC Hall, WK Burns, RP Moeller Journal of lightwave technology 13 (7), 1452-1460, 1995 | 163 | 1995 |
| High-power, near-diffraction-limited large-area traveling-wave semiconductor amplifiers L Goldberg, D Mehuys, MR Surette, DC Hall IEEE journal of quantum electronics 29 (6), 2028-2043, 1993 | 112 | 1993 |
| Technique for lateral temperature profiling in optoelectronic devices using a photoluminescence microprobe DC Hall, L Goldberg, D Mehuys Applied physics letters 61 (4), 384-386, 1992 | 109 | 1992 |
| High-power disorder-defined coupled stripe Al/sub/ital y//Ga/sub 1/minus///sub/ital y//As-GaAs-In/sub/ital x//Ga/sub 1/minus///sub/ital x//As quantum well heterostructure lasers DC Hall, LJ Guido, P Gavrilovic, K Meehan, JE Williams, W Stutius Appl. Phys. Lett.;(United States) 55 (3), 1989 | 73 | 1989 |
| Mikroelektronik Centret, DK-2800 Lyngby, Denmark Received 4 December 1996; accepted for publication 11 March 1997 We use an ultrafast scanning tunneling microscope to resolve … JR Jensen, JÍM Hvam in: Applied Physics Letters, 1997 | 68 | 1997 |
| GaAs MOSFET using InAlP native oxide as gate dielectric X Li, Y Cao, DC Hall, P Fay, B Han, A Wibowo, N Pan IEEE Electron Device Letters 25 (12), 772-774, 2004 | 65 | 2004 |
| 3.3 W CW diffraction limited broad area semiconductor amplifier L Goldberg, DC Hall, D Mehuys Electronics Letters 28 (12), 1082-1084, 1992 | 57 | 1992 |
| Carbon‐doped AlxGa1−xAs‐GaAs quantum well lasers LJ Guido, GS Jackson, DC Hall, WE Plano, N Holonyak Jr Applied physics letters 52 (7), 522-524, 1988 | 52 | 1988 |
| Wavelength stability optimization in Er (3+)-doped superfluorescent fibre sources DC Hall, WK Burns Electronics letters 30 (8), 653-654, 1994 | 51 | 1994 |
| Nonselective wet oxidation of AlGaAs heterostructure waveguides through controlled addition of oxygen Y Luo, DC Hall IEEE Journal of Selected Topics in Quantum Electronics 11 (6), 1284-1291, 2005 | 43 | 2005 |
| Effect of dislocation scattering on the transport properties of InN grown on GaN substrates by molecular beam epitaxy KA Wang, Y Cao, J Simon, J Zhang, A Mintairov, J Merz, D Hall, T Kosel, ... Applied physics letters 89 (16), 2006 | 42 | 2006 |
| Electrical properties of InAlP native oxides for metal–oxide–semiconductor device applications Y Cao, J Zhang, X Li, TH Kosel, P Fay, DC Hall, XB Zhang, RD Dupuis, ... Applied Physics Letters 86 (6), 2005 | 42 | 2005 |
| Room-temperature 1.5 μm photoluminescence of -doped native oxides L Kou, DC Hall, H Wu Applied physics letters 72 (26), 3411-3413, 1998 | 39 | 1998 |
| High‐power gain‐guided coupled‐stripe quantum well laser array by hydrogenation GS Jackson, DC Hall, LJ Guido, WE Plano, N Pan, N Holonyak Jr, ... Applied physics letters 52 (9), 691-693, 1988 | 39 | 1988 |
| Ultra-high-stability two-stage superfluorescent fibre sources for fibre optic gyroscopes PZ Zatta, DC Hall Electronics letters 38 (9), 1, 2002 | 36 | 2002 |
| Microwave performance of GaAs MOSFET with wet thermally oxidized InAlP gate dielectric Y Cao, X Li, J Zhang, P Fay, TH Kosel, DC Hall IEEE Electron Device Letters 27 (5), 317-319, 2006 | 33 | 2006 |
| Oxidized heterostructure planar waveguides Y Luo, DC Hall, L Kou, L Steingart, JH Jackson, O Blum, H Hou Applied physics letters 75 (20), 3078-3080, 1999 | 33 | 1999 |
| Effects of microcracking on AlxGa1− xAs‐GaAs quantum well lasers grown on Si DG Deppe, DC Hall, N Holonyak, RJ Matyi, H Shichijo, JE Epler Applied physics letters 53 (10), 874-876, 1988 | 33 | 1988 |
| Native‐oxide‐defined coupled‐stripe AlxGa1− xAs‐GaAs quantum well heterostructure lasers JM Dallesasse, N Holonyak, DC Hall, N El‐Zein, AR Sugg, SC Smith, ... Applied physics letters 58 (8), 834-836, 1991 | 32 | 1991 |
| High‐power disorder‐defined coupled stripe AlyGa1− yAs‐GaAs‐InxGa1− xAs quantum well heterostructure lasers JS Major, DC Hall, LJ Guido, N Holonyak, P Gavrilovic, K Meehan, ... Applied physics letters 55 (3), 271-273, 1989 | 30 | 1989 |
