| Resonant tunneling diodes: Models and properties JP Sun, GI Haddad, P Mazumder, JN Schulman Proceedings of the IEEE 86 (4), 641-660, 1998 | 550 | 1998 |
| Interband optical transitions in GaAs-Ga 1− x Al x As and InAs-GaSb superlattices YC Chang, JN Schulman Physical Review B 31 (4), 2069, 1985 | 353 | 1985 |
| The CdTe/HgTe superlattice: Proposal for a new infrared material JN Schulman, TC McGill Applied Physics Letters 34 (10), 663-665, 1979 | 343 | 1979 |
| Band mixing in semiconductor superlattices JN Schulman, YC Chang Physical review B 31 (4), 2056, 1985 | 328 | 1985 |
| Physics-based RTD current-voltage equation JN Schulman, HJ De Los Santos, DH Chow IEEE Electron Device Letters 17 (5), 220-222, 1996 | 287 | 1996 |
| Low cost millimeter wave imager JJ Lynch, JH Schaffner, DF Sievenpiper, D Choudhury, J Colburn, ... US Patent 7,583,074, 2009 | 247 | 2009 |
| Advantages of the HgTe‐CdTe superlattice as an infrared detector material DL Smith, TC McGill, JN Schulman Applied Physics Letters 43 (2), 180-182, 1983 | 234 | 1983 |
| Complex band structures of crystalline solids: An eigenvalue method YC Chang, JN Schulman Physical Review B 25 (6), 3975, 1982 | 233 | 1982 |
| New evidence of extensive valence-band mixing in GaAs quantum wells through excitation photoluminescence studies RC Miller, AC Gossard, GD Sanders, YC Chang, JN Schulman Physical Review B 32 (12), 8452, 1985 | 186 | 1985 |
| New method for calculating electronic properties of superlattices using complex band structures JN Schulman, YC Chang Physical Review B 24 (8), 4445, 1981 | 179 | 1981 |
| Effect of size nonuniformity on the absorption spectrum of a semiconductor quantum dot system WY Wu, JN Schulman, TY Hsu, U Efron Applied physics letters 51 (10), 710-712, 1987 | 175 | 1987 |
| Modification of optical properties of GaAs‐Ga1− xAlxAs superlattices due to band mixing YC Chang, JN Schulman Applied physics letters 43 (6), 536-538, 1983 | 169 | 1983 |
| Passive millimeter-wave imaging module with preamplified zero-bias detection JJ Lynch, HP Moyer, JH Schaffner, Y Royter, M Sokolich, B Hughes, ... IEEE Transactions on Microwave Theory and Techniques 56 (7), 1592-1600, 2008 | 156 | 2008 |
| Electronic properties of the AlAs-GaAs (001) interface and superlattice JN Schulman, TC McGill Physical Review B 19 (12), 6341, 1979 | 153 | 1979 |
| Reduced Hamiltonian method for solving the tight-binding model of interfaces JN Schulman, YC Chang Physical Review B 27 (4), 2346, 1983 | 150 | 1983 |
| Effects of quasi-interface states in HgTe-CdTe superlattices YC Chang, JN Schulman, G Bastard, Y Guldner, M Voos Physical Review B 31 (4), 2557, 1985 | 149 | 1985 |
| Infrared optical characterization of InAs/Ga1−xInxSb superlattices RH Miles, DH Chow, JN Schulman, TC McGill Applied physics letters 57 (8), 801-803, 1990 | 141 | 1990 |
| HgTe-CdTe superlattice subband dispersion JN Schulman, YC Chang Physical Review B 33 (4), 2594, 1986 | 132 | 1986 |
| Sb-heterostructure interband backward diodes JN Schulman, DH Chow IEEE Electron Device Letters 21 (7), 353-355, 2000 | 105 | 2000 |
| Photoreflectance study of GaAs/AlAs superlattices: Fit to electromodulation theory H Shen, P Parayanthal, FH Pollak, M Tomkiewicz, TJ Drummond, ... Applied physics letters 48 (10), 653-655, 1986 | 100 | 1986 |
