Johann Peter Reithmaier 个人学术档案

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	总计	2019 年至今
引用	16353	3581
h 指数	54	23
i10 指数	278	85

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Manfred BayerExperimentelle Physik 2, Fakultät Physik, TU Dortmund在 tu-dortmund.de 的电子邮件经过验证
Stephan ReitzensteinTechnische Universität Berlin在 physik.tu-berlin.de 的电子邮件经过验证
Vissarion (Beso) MikhelashviliElectrical Engineering Department, Technion, Israel Institute of Technology, Haifa, Israel在 ee.technion.ac.il 的电子邮件经过验证
Prof. Dr. Mohamed BenyoucefUniversity of Kassel在 physik.uni-kassel.de 的电子邮件经过验证
Vitalii SichkovskyiInstitute of Nanostructure Technologies and Analytics, University of Kassel在 uni-kassel.de 的电子邮件经过验证
Sven HöflingUniversity of Würzburg, Germany在 physik.uni-wuerzburg.de 的电子邮件经过验证
Dr. Carolin Böckler geb. HofmannWissenschaftl. Mitarbeiterin; Universität Würzburg在 boeckler.org 的电子邮件经过验证
Marcin SyperekGroup of Nonlinear Quantum Photonics, Laboratory for Optical Spectroscopy of Nanostructures, Wroclaw在 pwr.wroc.pl 的电子邮件经过验证
Ori EyalElectro Optic Engineer, Technion在 technion.ac.il 的电子邮件经过验证
Amir CapuaAssistant Professor, Hebrew University在 mail.huji.ac.il 的电子邮件经过验证
Ouri KarniResearch scientist, NTT- Research PHI Labs在 stanford.edu 的电子邮件经过验证
Plamen PetkovProf. PhD在 uctm.edu 的电子邮件经过验证
Anna MusialAssistant professor, Wroclaw University of Science and Technology, Poland在 pwr.edu.pl 的电子邮件经过验证
Robert KudrawiecWroclaw University of Science and Technology在 pwr.edu.pl 的电子邮件经过验证
Gerd BacherUniversität Duisburg-Essen在 uni-due.de 的电子邮件经过验证
Paweł PodemskiWrocław University of Science and Technology在 pwr.edu.pl 的电子邮件经过验证
Tamara PetkovaProf. , PhD., Institute od Electrochemistry and Energy Systems在 iees.bas.bg 的电子邮件经过验证
Henning RiechertDirector, Paul-Drude-Institut für Festkörperelektronik在 pdi-berlin.de 的电子邮件经过验证
Janusz AndrzejewskiWroclaw University of Technology, Institute of Physics在 pwr.wroc.pl 的电子邮件经过验证
Aleksander MaryńskiDoktorant, Politechnika Wrocławska在 pwr.edu.pl 的电子邮件经过验证

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Johann Peter Reithmaier

Institute of Nanostructure Technologies and Analytics (INA), University of Kassel

在 ina.uni-kassel.de 的电子邮件经过验证

Nano Science Optoelectronics Semiconductor Physics Quantum Dot Lasers Molecular Beam Epitaxy


标题按引用次数排序按年份排序按标题排序	引用次数引用次数	年份
Strong coupling in a single quantum dot–semiconductor microcavity system JP Reithmaier, G Sęk, A Löffler, C Hofmann, S Kuhn, S Reitzenstein, ... Nature 432 (7014), 197-200, 2004	2511	2004
Fine structure of neutral and charged excitons in self-assembled In (Ga) As/(Al) GaAs quantum dots M Bayer, G Ortner, O Stern, A Kuther, AA Gorbunov, A Forchel, ... Physical Review B 65 (19), 195315, 2002	1521	2002
Electron and hole g factors and exchange interaction from studies of the exciton fine structure in In 0.60 Ga 0.40 As quantum dots M Bayer, A Kuther, A Forchel, A Gorbunov, VB Timofeev, F Schäfer, ... Physical Review Letters 82 (8), 1748, 1999	562	1999
Optical modes in photonic molecules M Bayer, T Gutbrod, JP Reithmaier, A Forchel, TL Reinecke, PA Knipp, ... Physical review letters 81 (12), 2582, 1998	468	1998
Long-wavelength InP-based quantum-dash lasers R Schwertberger, D Gold, JP Reithmaier, A Forchel IEEE Photonics Technology Letters 14 (6), 735-737, 2002	234	2002
Zeeman splitting of excitons and biexcitons in single In 0.60 Ga 0.40 A s/G a A s self-assembled quantum dots A Kuther, M Bayer, A Forchel, A Gorbunov, VB Timofeev, F Schäfer, ... Physical Review B 58 (12), R7508, 1998	201	1998
Tunable photonic crystals fabricated in III-V semiconductor slab waveguides using infiltrated liquid crystals C Schuller, F Klopf, JP Reithmaier, M Kamp, A Forchel Applied Physics Letters 82 (17), 2767-2769, 2003	186	2003
Control of Vertically Coupled Quantum Dots with Electric Fields G Ortner, M Bayer, Y Lyanda-Geller, TL Reinecke, A Kress, JP Reithmaier, ... Physical review letters 94 (15), 157401, 2005	178	2005
Size dependence of confined optical modes in photonic quantum dots JP Reithmaier, M Röhner, H Zull, F Schäfer, A Forchel, PA Knipp, ... Physical review letters 78 (2), 378, 1997	173	1997
Weak and strong coupling of photons and excitons in photonic dots T Gutbrod, M Bayer, A Forchel, JP Reithmaier, TL Reinecke, S Rudin, ... Physical Review B 57 (16), 9950, 1998	169	1998
InP based lasers and optical amplifiers with wire-/dot-like active regions JP Reithmaier, A Somers, S Deubert, R Schwertberger, W Kaiser, ... Journal of Physics D: Applied Physics 38 (13), 2088, 2005	166	2005
Telecom-wavelength (1.5 μm) single-photon emission from InP-based quantum dots M Benyoucef, M Yacob, JP Reithmaier, J Kettler, P Michler Applied Physics Letters 103 (16), 2013	160	2013
Enhanced light emission of In x Ga 1− x As quantum dots in a two-dimensional photonic-crystal defect microcavity TD Happ, II Tartakovskii, VD Kulakovskii, JP Reithmaier, M Kamp, ... Physical Review B 66 (4), 041303, 2002	148	2002
Line narrowing in single semiconductor quantum dots: Toward the control of environment effects C Kammerer, C Voisin, G Cassabois, C Delalande, P Roussignol, F Klopf, ... Physical Review B 66 (4), 041306, 2002	142	2002
Lasing in high-Q quantum-dot micropillar cavities S Reitzenstein, A Bazhenov, A Gorbunov, C Hofmann, S Münch, A Löffler, ... Applied Physics Letters 89 (5), 2006	132	2006
Band offset in elastically strained InGaAs/GaAs multiple quantum wells determined by optical absorption and electronic Raman scattering JP Reithmaier, R Höger, H Riechert, A Heberle, G Abstreiter, G Weimann Applied physics letters 56 (6), 536-538, 1990	125	1990
Semiconductor quantum dot microcavity pillars with high-quality factors and enlarged dot dimensions A Löffler, JP Reithmaier, G Sęk, C Hofmann, S Reitzenstein, M Kamp, ... Applied Physics Letters 86 (11), 2005	118	2005
Optical demonstration of a crystal band structure formation M Bayer, T Gutbrod, A Forchel, TL Reinecke, PA Knipp, R Werner, ... Physical Review Letters 83 (25), 5374, 1999	117	1999
On the nature of quantum dash structures H Dery, E Benisty, A Epstein, R Alizon, V Mikhelashvili, G Eisenstein, ... Journal of applied physics 95 (11), 6103-6111, 2004	115	2004
Transient electromagnetically induced transparency in self-assembled quantum dots S Marcinkevičius, A Gushterov, JP Reithmaier Applied Physics Letters 92 (4), 2008	114	2008

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