| Recent advances in physical reservoir computing: A review G Tanaka, T Yamane, JB Héroux, R Nakane, N Kanazawa, S Takeda, ... Neural Networks 115, 100-123, 2019 | 1576 | 2019 |
| Carrier-transport-enhanced channel CMOS for improved power consumption and performance S Takagi, T Iisawa, T Tezuka, T Numata, S Nakaharai, N Hirashita, ... IEEE transactions on electron devices 55 (1), 21-39, 2007 | 431 | 2007 |
| Reservoir computing with spin waves excited in a garnet film R Nakane, G Tanaka, A Hirose IEEE access 6, 4462-4469, 2018 | 196 | 2018 |
| Device structures and carrier transport properties of advanced CMOS using high mobility channels S Takagi, T Tezuka, T Irisawa, S Nakaharai, T Numata, K Usuda, ... Solid-State Electronics 51 (4), 526-536, 2007 | 181 | 2007 |
| Analysis of L21-ordering in full-Heusler Co2FeSi alloy thin films formed by rapid thermal annealing Y Takamura, R Nakane, S Sugahara Journal of Applied Physics 105 (7), 2009 | 161 | 2009 |
| Gate dielectric formation and MIS interface characterization on Ge S Takagi, T Maeda, N Taoka, M Nishizawa, Y Morita, K Ikeda, ... Microelectronic engineering 84 (9-10), 2314-2319, 2007 | 131 | 2007 |
| IEEE International Electron Devices Meeting DH Kim, M Yokoyama, N Taoka, R Iida, S Lee, R Nakane, Y Urabe, ... San Francisco, CA, 6-8, 2010 | 85 | 2010 |
| High performance GeO2/Ge nMOSFETs with source/drain junctions formed by gas phase doping K Morii, T Iwasaki, R Nakane, M Takenaka, S Takagi 2009 IEEE International Electron Devices Meeting (IEDM), 1-4, 2009 | 84 | 2009 |
| High Ion/Ioff Ge-source ultrathin body strained-SOI tunnel FETs M Kim, Y Wakabayashi, R Nakane, M Yokoyama, M Takenaka, S Takagi 2014 IEEE international electron devices meeting, 13.2. 1-13.2. 4, 2014 | 82 | 2014 |
| Electron Device Letters IEEE K Morii, T Iwasaki, R Nakane, M Takenaka, S Takagi Electron Device Letters, IEEE 31, 1092-1094, 2010 | 81 | 2010 |
| High Performance Tri-Gate Extremely Thin-Body InAs-On-Insulator MOSFETs With High Short Channel Effect Immunity and Tunability SH Kim, M Yokoyama, R Nakane, O Ichikawa, T Osada, M Hata, ... IEEE Transactions on Electron Devices 61 (5), 1354-1360, 2014 | 68 | 2014 |
| Interface-controlled self-align source/drain Ge pMOSFETs using thermally-oxidized GeO2 interfacial layers Y Nakakita, R Nakane, T Sasada, H Matsubara, M Takenaka, S Takagi 2008 IEEE International Electron Devices Meeting, 1-4, 2008 | 57 | 2008 |
| Highly strained-SiGe-on-insulator p-channel metal-oxide-semiconductor field-effective transistors fabricated by applying Ge condensation technique to strained-Si-on-insulator … J Suh, R Nakane, N Taoka, M Takenaka, S Takagi Applied Physics Letters 99 (14), 2011 | 56 | 2011 |
| Quantitative analysis of atomic disorders in full-Heusler Co2FeSi alloy thin films using x-ray diffraction with Co Kα and Cu Kα sources Y Takamura, R Nakane, S Sugahara Journal of Applied Physics 107 (9), 2010 | 54 | 2010 |
| Self-aligned metal source/drain InxGa1−xAs n-MOSFETs using Ni-InGaAs alloy SH Kim, M Yokoyama, N Taoka, R Iida, S Lee, R Nakane, Y Urabe, ... 2010 International Electron Devices Meeting, 26.6. 1-26.6. 4, 2010 | 53 | 2010 |
| High-performance InAs-on-insulator n-MOSFETs with Ni-InGaAs S/D realized by contact resistance reduction technology SH Kim, M Yokoyama, R Nakane, O Ichikawa, T Osada, M Hata, ... IEEE transactions on electron devices 60 (10), 3342-3350, 2013 | 52 | 2013 |
| Sub-60-nm Extremely Thin Body -On-Insulator MOSFETs on Si With Ni-InGaAs Metal S/D and MOS Interface Buffer Engineering and Its Scalability S Kim, M Yokoyama, N Taoka, R Nakane, T Yasuda, O Ichikawa, ... IEEE transactions on electron devices 60 (8), 2512-2517, 2013 | 48 | 2013 |
| Electronic structure and magnetic properties of magnetically dead layers in epitaxial films studied by x-ray magnetic circular dichroism YK Wakabayashi, Y Nonaka, Y Takeda, S Sakamoto, K Ikeda, Z Chi, ... Physical Review B 96 (10), 104410, 2017 | 46 | 2017 |
| High performance extremely thin body InGaAs-on-insulator metal–oxide–semiconductor field-effect transistors on Si substrates with Ni–InGaAs metal source/drain SH Kim, M Yokoyama, N Taoka, R Iida, S Lee, R Nakane, Y Urabe, ... Applied Physics Express 4 (11), 114201, 2011 | 43 | 2011 |
| Ge/Si heterojunction tunnel field-effect transistors and their post metallization annealing effect M Kim, YK Wakabayashi, M Yokoyama, R Nakane, M Takenaka, S Takagi IEEE Transactions on Electron Devices 62 (1), 9-15, 2014 | 42 | 2014 |
