| Plasma-enhanced flash process PE Brunemeier, T Miu US Patent 5,869,401, 1999 | 34 | 1999 |
| Photoluminescence measurements of band discontinuity in InP‐InGaPAs heterostructures PE Brunemeier, DG Deppe, N Holonyak Applied physics letters 46 (8), 755-757, 1985 | 25 | 1985 |
| Inhomogeneous materials having physical properties decoupled from desired functions PE Brunemeier, A Sengupta, JF Gaynor, RH Havemann US Patent 6,873,026, 2005 | 22 | 2005 |
| Inhomogeneity of liquid‐phase‐epitaxial InGaAsP lattice matched on InP: Effects of transient growth PE Brunemeier, TJ Roth, N Holonyak Jr, GE Stillman Journal of applied physics 56 (6), 1707-1716, 1984 | 22 | 1984 |
| Interface abruptness and dissolution-induced “damage” in LPE InGaAsP heterostructures PE Brunemeier, KC Hsieh, DG Deppe, JM Brown, N Holonyak Jr Journal of crystal growth 71 (3), 705-710, 1985 | 19 | 1985 |
| Method of fabricating group III-V compound RD Remba, PE Brunemeier, BC Schmukler, WA Strifler, DH Rosenblatt US Patent 5,374,328, 1994 | 17 | 1994 |
| Measurement of compositional inhomogeneity of liquid phase epitaxial InGaPAs PE Brunemeier, TJ Roth, N Holonyak Jr, GE Stillman Applied physics letters 43 (4), 373-375, 1983 | 12 | 1983 |
| Observation of gallium source ‘‘spitting’’ PE Brunemeier Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 1991 | 10 | 1991 |
| High-uniformity liquid phase epitaxial InGaAsP (λ= 1.3 μm) PE Brunemeier, TJ Roth, N Holonyak Jr, GE Stillman Journal of crystal growth 66 (2), 484-486, 1984 | 7 | 1984 |
| Highly selective citric buffer etch-stop process for the manufacture of very uniform GaAs/AlGaAs FETs BC Schmukler, PE Brunemeier, WR Hitchens, BD Cantos, WA Strifler, ... 15th Annual GaAs IC Symposium, 325-328, 1993 | 5 | 1993 |
| Reduction of GaAs metal–semiconductor field effect transistor sidegating by ultraviolet/ozone cleanup prior to molecular‐beam epitaxial growth WR Hitchens, PE Brunemeier, DM Dobkin Journal of Vacuum Science & Technology B: Microelectronics Processing and …, 1989 | 5 | 1989 |
| Method of fabricating group iii-v compound semiconductor devices using selective etching RD Remba, PE Brunemeier, BC Schmukler, WA Strifler, DH Rosenblatt | 3 | 1994 |
| Liquid Phase Epitaxial Growth and Heterointerface Characteristics of Long-Wavelength Indium-Gallium Arsenide-Phosphide Heterostructures (Lasers, Semiconductors) PE Brunemeier University of Illinois at Urbana-Champaign, 1985 | | 1985 |
