| A 2D metal–organic framework/reduced graphene oxide heterostructure for supercapacitor application LG Beka, X Bu, X Li, X Wang, C Han, W Liu RSC advances 9 (62), 36123-36135, 2019 | 78 | 2019 |
| Metal-organic frameworks-derived Co3O4/Ti3C2Tx Mxene nanocomposites for high performance ethanol sensing X Bu, F Ma, Q Wu, H Wu, Y Yuan, L Hu, C Han, X Wang, W Liu, X Li Sensors and Actuators B: Chemical 369, 132232, 2022 | 34 | 2022 |
| Comparative Study of Nb2O5, NbLaO, and La2O3as Gate Dielectric of InGaZnO Thin-Film Transistor J Song, C Han, PT Lai IEEE Transactions on Electron Devices 63 (5), 1928-1933, 2016 | 33 | 2016 |
| Reduced graphene oxide/CoS 2 porous nanoparticle hybrid electrode material for supercapacitor application LG Beka, X Li, X Wang, C Han, W Liu RSC advances 9 (46), 26637-26645, 2019 | 29 | 2019 |
| Improved Performance of Amorphous InGaZnO Thin-Film Transistor WithGate Dielectric by Using La Incorporation LX Qian, XZ Liu, CY Han, PT Lai IEEE Transactions on Device and Materials Reliability 14 (4), 1056-1060, 2014 | 29 | 2014 |
| Recent developments of flexible InGaZnO thin‐film transistors J Song, X Huang, C Han, Y Yu, Y Su, P Lai physica status solidi (a) 218 (7), 2000527, 2021 | 26 | 2021 |
| High-performance organic thin-film transistor by using LaNbO as gate dielectric CY Han, JQ Song, WM Tang, CH Leung, PT Lai Applied Physics Letters 107 (3), 2015 | 26 | 2015 |
| A study on pentacene organic thin-film transistor with different gate materials on various substrates CY Han, YX Ma, WM Tang, XL Wang, PT Lai IEEE Electron Device Letters 38 (6), 744-747, 2017 | 25 | 2017 |
| High-mobility pentacene thin-film transistor by using LaxTa (1− x) Oy as gate dielectric CY Han, WM Tang, CH Leung, CM Che, PT Lai Organic Electronics 15 (10), 2499-2504, 2014 | 25 | 2014 |
| High-Mobility Pentacene Organic Thin-Film Transistor with LaxNb(1–x)Oy Gate Dielectric Fabricated on Vacuum Tape CY Han, WM Tang, PT Lai IEEE Transactions on Electron Devices 64 (4), 1716-1722, 2017 | 24 | 2017 |
| A study on La incorporation in transition-metal (Y, Zr, and Nb) oxides as gate dielectric of pentacene organic thin-film transistor CY Han, WM Tang, CH Leung, CM Che, PT Lai IEEE Transactions on Electron Devices 62 (7), 2313-2319, 2015 | 19 | 2015 |
| High-performance pentacene OTFT by incorporating Ti in LaON gate dielectric YX Ma, CY Han, WM Tang, PT Lai Applied Physics Letters 111 (2), 2017 | 18 | 2017 |
| Improving ammonia detecting performance of polyaniline decorated rGO composite membrane with GO doping Y Yuan, H Wu, X Bu, Q Wu, X Wang, C Han, X Li, X Wang, W Liu Materials 14 (11), 2829, 2021 | 16 | 2021 |
| High-mobility pentacene organic thin-film transistors achieved by reducing remote phonon scattering and surface-roughness scattering CY Han, WM Tang, PT Lai Applied Surface Science 544, 148656, 2021 | 16 | 2021 |
| Characterization and Modelling of Flexible VO2 Mott Memristor for the Artificial Spiking Warm Receptor CY Han, ZR Han, SL Fang, SQ Fan, JQ Yin, WH Liu, X Li, SQ Yang, ... Advanced Materials Interfaces 9 (19), 2200394, 2022 | 15 | 2022 |
| Biodegradable transient resistive random-access memory based on MoO3/MgO/MoO3 stack SL Fang, WH Liu, X Li, XL Wang, L Geng, MS Wu, XD Huang, CY Han Applied Physics Letters 115 (24), 2019 | 15 | 2019 |
| High-Performance Pentacene Thin-Film Transistor With High-HfLaON as Gate Dielectric CY Han, WM Tang, CH Leung, CM Che, PT Lai IEEE electron device letters 34 (11), 1397-1399, 2013 | 15 | 2013 |
| Effects of gate electron concentration on the performance of pentacene organic thin-film transistors YX Ma, CY Han, WM Tang, PT Lai IEEE Electron Device Letters 39 (7), 963-966, 2018 | 13 | 2018 |
| High-performance pentacene thin-film transistor with ZrLaO gate dielectric passivated by fluorine incorporation CY Han, LX Qian, CH Leung, CM Che, PT Lai Organic Electronics 14 (11), 2973-2979, 2013 | 13 | 2013 |
| An artifical synapse based on graphene field-effect transistor with silver gel/polarized-aptamer gate CY Han, Y Li, ZX Zhang, WH Liu, X Li, X Guo, J Wan, GH Zhang, XL Wang, ... Organic Electronics 92, 106118, 2021 | 12 | 2021 |
