| Evidence of strong carrier localization below 100 K in a GaInNAs/GaAs single quantum well L Grenouillet, C Bru-Chevallier, G Guillot, P Gilet, P Duvaut, C Vannuffel, ... Applied Physics Letters 76 (16), 2241-2243, 2000 | 259 | 2000 |
| From large to low height dispersion for self-organized InAs quantum sticks emitting at 1.55 μm on InP (001) M Gendry, C Monat, J Brault, P Regreny, G Hollinger, B Salem, G Guillot, ... Journal of applied physics 95 (9), 4761-4766, 2004 | 110 | 2004 |
| Current deep level transient spectroscopy analysis of AlInN/GaN high electron mobility transistors: Mechanism of gate leakage W Chikhaoui, JM Bluet, MA Poisson, N Sarazin, C Dua, C Bru-Chevallier Applied Physics Letters 96 (7), 2010 | 107 | 2010 |
| Growth and optical properties of GaN/AlN quantum wells C Adelmann, E Sarigiannidou, D Jalabert, Y Hori, JL Rouviere, B Daudin, ... Applied Physics Letters 82 (23), 4154-4156, 2003 | 106 | 2003 |
| How to grow cubic GaN with low hexagonal phase content on (001) SiC by molecular beam epitaxy B Daudin, G Feuillet, J Hübner, Y Samson, F Widmann, A Philippe, ... Journal of Applied Physics 84 (4), 2295-2300, 1998 | 98 | 1998 |
| Rapid thermal annealing in structures: Effect of nitrogen reorganization on optical properties L Grenouillet, C Bru-Chevallier, G Guillot, P Gilet, P Ballet, P Duvaut, ... Journal of applied physics 91 (9), 5902-5908, 2002 | 86 | 2002 |
| Photoluminescence properties of GaN grown on compliant silicon-on-insulator substrates J Cao, D Pavlidis, A Eisenbach, A Philippe, C Bru-Chevallier, G Guillot Applied physics letters 71 (26), 3880-3882, 1997 | 56 | 1997 |
| Structural properties of undoped and doped cubic GaN grown on SiC (001) E Martínez-Guerrero, E Bellet-Amalric, L Martinet, G Feuillet, B Daudin, ... Journal of applied physics 91 (8), 4983-4987, 2002 | 46 | 2002 |
| Strong carrier confinement and evidence for excited states in self-assembled InAs quantum islands grown on InP (001) B Salem, T Benyattou, G Guillot, C Bru-Chevallier, G Bremond, C Monat, ... Physical Review B 66 (19), 193305, 2002 | 45 | 2002 |
| Excitonic properties of wurtzite InP nanowires grown on silicon substrate MHH Alouane, N Chauvin, H Khmissi, K Naji, B Ilahi, H Maaref, ... Nanotechnology 24 (3), 035704, 2012 | 37 | 2012 |
| Deep traps analysis in AlGaN/GaN heterostructure transistors W Chikhaoui, JM Bluet, C Bru‐Chevallier, C Dua, R Aubry physica status solidi c 7 (1), 92-95, 2010 | 34 | 2010 |
| MBE growth optimization and optical spectroscopy of InAs/GaAs quantum dots emitting at 1.3 μm in single and stacked layers V Celibert, E Tranvouez, G Guillot, C Bru-Chevallier, L Grenouillet, ... Journal of crystal growth 275 (1-2), e2313-e2319, 2005 | 33 | 2005 |
| Size and shape effects on excitons and biexcitons in single InAs∕ InP quantum dots N Chauvin, B Salem, G Bremond, G Guillot, C Bru-Chevallier, M Gendry Journal of applied physics 100 (7), 2006 | 32 | 2006 |
| Photoreflectance spectroscopy for the study of GaAsSb/InP heterojunction bipolar transistors C Bru-Chevallier, H Chouaib, J Arcamone, T Benyattou, H Lahreche, ... Thin Solid Films 450 (1), 151-154, 2004 | 30 | 2004 |
| Wurtzite InP/InAs/InP core–shell nanowires emitting at telecommunication wavelengths on Si substrate MHH Alouane, R Anufriev, N Chauvin, H Khmissi, K Naji, B Ilahi, H Maaref, ... Nanotechnology 22 (40), 405702, 2011 | 29 | 2011 |
| Growth temperature dependence of exciton lifetime in wurtzite InP nanowires grown on silicon substrates N Chauvin, MH Hadj Alouane, R Anufriev, H Khmissi, K Naji, G Patriarche, ... Applied Physics Letters 100 (1), 2012 | 27 | 2012 |
| Characterisation and modelling of parasitic effects and failure mechanisms in AlGaN/GaN HEMTs N Malbert, N Labat, A Curutchet, C Sury, V Hoel, JC de Jaeger, ... Microelectronics Reliability 49 (9-11), 1216-1221, 2009 | 27 | 2009 |
| Low density of self-assembled InAs quantum dots grown by solid-source molecular beam epitaxy on InP (001) E Dupuy, P Regreny, Y Robach, M Gendry, N Chauvin, E Tranvouez, ... Applied physics letters 89 (12), 2006 | 26 | 2006 |
| InAs/InP nanowires grown by catalyst assisted molecular beam epitaxy on silicon substrates H Khmissi, K Naji, MHH Alouane, N Chauvin, C Bru-Chevallier, B Ilahi, ... Journal of Crystal Growth 344 (1), 45-50, 2012 | 25 | 2012 |
| Microphotoluminescence of exciton and biexciton around 1.5 μm from a single InAs∕ InP (001) quantum dot G Saint-Girons, N Chauvin, A Michon, G Patriarche, G Beaudoin, ... Applied physics letters 88 (13), 2006 | 24 | 2006 |
