| Engineering Hf0.5Zr0.5O2 Ferroelectric/Anti- Ferroelectric Phases With Oxygen Vacancy and Interface Energy Achieving High Remanent Polarization and … Z Zhao, YR Chen, JF Wang, YW Chen, JR Zou, Y Lin, Y Xing, CW Liu, ... IEEE Electron Device Letters 43 (4), 553-556, 2022 | 42 | 2022 |
| Experimental demonstration of TreeFETs combining stacked nanosheets and low doping interbridges by epitaxy and wet etching CT Tu, WH Hsieh, BW Huang, YR Chen, YC Liu, CE Tsai, SJ Chueh, ... IEEE Electron Device Letters 43 (5), 682-685, 2022 | 22 | 2022 |
| Highly Stacked 8 Ge0. 9Sn0. 1 Nanosheet pFETs with Ultrathin Bodies (~ 3 nm) and Thick Bodies (~ 30 nm) Featuring the Respective Record ION/IOFF of 1.4 x107 and Record ION of … CE Tsai, YC Liu, CT Tu, BW Huang, SR Jan, YR Chen, JY Chen, ... Proceedings of the 2021 IEEE International Electron Devices Meeting (IEDM …, 2021 | 19 | 2021 |
| First highly stacked Ge 0.95 Si 0.05 nGAAFETs with record I ON= 110 μA (4100 μA/μm) at V OV= V DS= 0.5 V and high G m, max= 340 μS (13000 μS/μm) at V DS= 0.5 V by wet etching YC Liu, CT Tu, CE Tsai, YR Chen, JY Chen, SR Jan, BW Huang, ... 2021 Symposium on VLSI Technology, 1-2, 2021 | 14 | 2021 |
| Wearable Sensor for Measurement of Gait Walking and Running Motion. YC Huang, YR Chen, HY Wu, YJ Huang Sensors & Materials 31, 2019 | 11 | 2019 |
| Improved Ferroelectricity in Cryogenic Phase Transition of Hf0.5Zr0.5O2 Y Xing, YR Chen, JF Wang, Z Zhao, YW Chen, GH Chen, Y Lin, R Dobhal, ... IEEE Journal of the Electron Devices Society 10, 996-1002, 2022 | 10 | 2022 |
| Towards Epitaxial Ferroelectric HZO on n+-Si/Ge Substrates Achieving Record 2Pr = 84 μC/cm² and Endurance > 1E11 Z Zhao, YR Chen, YW Chen, WH Hsieh, JF Wang, JY Lee, Y Xing, ... 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and …, 2023 | 7 | 2023 |
| First stacked nanosheet fefet featuring memory window of 1.8 V at record low write voltage of 2V and endurance> 1E11 cycles YR Chen, YC Liu, Z Zhao, WH Hsieh, JY Lee, CT Tu, BW Huang, JF Wang, ... 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and …, 2023 | 7 | 2023 |
| ION Enhancement of Ge0.98Si0.02 Nanowire nFETs by High-κ Dielectrics YR Chen, Z Zhao, CT Tu, YC Liu, BW Huang, Y Xing, GH Chen, CW Liu IEEE Electron Device Letters 43 (10), 1601-1604, 2022 | 7 | 2022 |
| Highly stacked GeSn nanosheets by CVD epitaxy and highly selective isotropic dry etching BW Huang, CE Tsai, YC Liu, CT Tu, WH Hsieh, SR Jan, YR Chen, ... IEEE Transactions on Electron Devices 69 (4), 2130-2136, 2022 | 7 | 2022 |
| First Demonstration of Multi-VT Stacked Ge0.87Sn0.13 Nanosheets by Dipole-Controlled ALD WNxCy Work Function Metal with Low Resistivity and Thermal … CE Tsai, YR Chen, CT Tu, YC Liu, JY Chen, CW Liu 2021 Symposium on VLSI Technology, 1-2, 2021 | 7 | 2021 |
| Effects of annealing temperature and nitrogen content on effective work function of tungsten nitride CH Huang, CE Tsai, YR Chen, CW Liu IEEE Electron Device Letters 40 (8), 1237-1240, 2019 | 7 | 2019 |
| Nearly ideal subthreshold swing and delay reduction of stacked nanosheets using ultrathin bodies CE Tsai, CY Cheng, BW Huang, HC Lin, T Chou, CT Tu, YC Liu, SR Jan, ... 2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and …, 2022 | 6 | 2022 |
| Engineering Hf0. 5Zr0. 5O2 Ferroelectric Tunnel Junctions With Amorphous WO x Bottom Electrodes Achieving High Remanent Polarization and Record Low-Operating Voltage Z Zhao, YR Chen, YW Chen, JF Wang, Y Xing, W Ji, GH Chen, JY Lee, ... IEEE Transactions on Electron Devices 70 (10), 5022-5027, 2023 | 5 | 2023 |
| Extremely High-κ Hf0. 2Zr0. 8O2 Gate Stacks Integrated Into Eight Stacked Ge0. 95Si0. 05 Nanowires and Nanosheets nFETs to Boost ION WJ Chen, YC Liu, YW Chen, YR Chen, HC Lin, CT Tu, BW Huang, ... IEEE Transactions on Electron Devices 70 (12), 6673-6679, 2023 | 4 | 2023 |
| Extremely High-κ Hf0.2Zr0.8O2 Gate Stacks Integrated into Ge0.95Si0.05 Nanowire and Nanosheet nFETs Featuring Respective Record Ion per Footprint of 9200μA/μm and Record Ion … YC Liu, YR Chen, YW Chen, HC Lin, WH Hsieh, CT Tu, BW Huang, ... 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and …, 2023 | 4 | 2023 |
| First demonstration of monolithic 3D self-aligned GeSi channel and common gate complementary FETs by CVD epitaxy using multiple P/N junction isolation CT Tu, YC Liu, BW Huang, YR Chen, WH Hsieh, CE Tsai, SJ Chueh, ... 2022 International Electron Devices Meeting (IEDM), 20.3. 1-20.3. 4, 2022 | 4 | 2022 |
| Interfacial-Layer-Free Ge0. 95Si0. 05 Nanosheet FeFETs WH Hsieh, YR Chen, YC Liu, Z Zhao, JY Lee, CT Tu, BW Huang, JF Wang, ... IEEE Transactions on Electron Devices 71 (3), 1758-1763, 2024 | 3 | 2024 |
| A Kinetic Pathway to Orthorhombic Hf0. 5Zr0. 5O2 GH Chen, YR Chen, Z Zhao, JY Lee, YW Chen, Y Xing, R Dobhal, CW Liu IEEE Journal of the Electron Devices Society, 2023 | 3 | 2023 |
| First Demonstration of Monolithic Self-aligned Heterogeneous Nanosheet Channel Complementary FETs with Matched VT by Band Alignments of Individual … CT Tu, WH Hsieh, YR Chen, BW Huang, YT Liao, WJ Chen, YC Liu, ... 2023 International Electron Devices Meeting (IEDM), 1-4, 2023 | 2 | 2023 |
