Tuning of coupling and surface quality of PbS nanocrystals via a combined ammonium sulfide and iodine treatment H Zhang, J Yang, JR Chen, JR Engstrom, T Hanrath, FW Wise The Journal of Physical Chemistry Letters 7 (4), 642-646, 2016 | 21 | 2016 |
Design and characterization of a microreactor for spatially confined atomic layer deposition and in situ UHV surface analysis JR Chen, W Zhang, RK Nahm, MA DiFeo, JR Engstrom Journal of Vacuum Science & Technology A 35 (6), 2017 | 9 | 2017 |
Systematic Studies into the Area Selectivity of Chemical Vapor Deposition Polymerization X Zhong, R Jordan, JR Chen, J Raymond, J Lahann ACS Applied Materials & Interfaces 15 (17), 21618-21628, 2023 | 6 | 2023 |
Interconnect structures with area selective adhesion or barrier materials for low resistance vias in integrated circuits C Jezewski, JR Chen, M Reshotko, JM Blackwell, M Metz, CY Lin EP Patent 3,993,019, 2022 | 4 | 2022 |
Subtractively patterned interconnect structures for integrated circuits K Lin, N Sato, T Tronic, M Christenson, C Jezewski, JR Chen, J Blackwell, ... US Patent 11,444,024, 2022 | 3 | 2022 |
Alternative routes to atomic layer deposition: reactor design and process development JR Chen http://doi.org/10.7298/X4PR7T4F, 2017 | 1 | 2017 |
Fluidic Self Alignment for Hybrid Bonding Using Intel Process F Eid, Y Shi, G Naderi, SB Sinha, R Jordan, W Li, C El Helou, F Bedoya, ... 2024 IEEE 74th Electronic Components and Technology Conference (ECTC), 2037-2041, 2024 | | 2024 |
In situ formation of inhibitor species through catalytic surface reactions during area-selective atomic layer deposition of TaN MJM Merkx, I Tezsevin, P Yu, T Janssen, RHGM Heinemans, RJ Lengers, ... The Journal of Chemical Physics 160 (20), 2024 | | 2024 |
Unfolding an Elusive Area-Selective Deposition Process: Atomic Layer Deposition of TiO2 and TiON on SiN vs SiO2 A Mameli, K Tapily, J Shen, F Roozeboom, M Lu, D O’Meara, ... ACS Applied Materials & Interfaces 16 (11), 14288-14295, 2024 | | 2024 |
Self-assembled monolayer on a dielectric for transition metal dichalcogenide growth for stacked 2d channels CH Naylor, K Maxey, KP O'brien, C Dorow, S Lee, AV Penumatcha, ... US Patent App. 17/850,078, 2023 | | 2023 |
Fill of vias in single and dual damascene structures using self-assembled monolayer JR Chen, C Jezewski, J Plombon, M Reshotko, M Kobrinsky, ... US Patent App. 17/558,423, 2023 | | 2023 |
Integrated circuits with max or mx conductive materials CH Naylor, CJ Jezewski, JD Bielefeld, JR Chen, RV Chebiam, ... US Patent App. 17/557,128, 2023 | | 2023 |
Staggered vertically spaced integrated circuit line metallization with differential vias & metal-selective deposition E Karpov, M Reshotko, SB Clendenning, JR Chen, M Metz US Patent App. 17/560,085, 2023 | | 2023 |
Probing strategies for selective deposition that exploit competitive interactions T Suh, HW Sohn, JR Chen, W Zheng, JR Engstrom AVS 65th International Symposium & Exhibition, 2018 | | 2018 |
Examination of alternative approaches to self-aligned, selective area atomic layer deposition JR Chen, W Zhang, T Suh, JR Engstrom AVS 16th International Conference on Atomic Layer Deposition, 2016 | | 2016 |
Design and characterization of a microreactor for thin film deposition and in situ surface analysis JR Chen, W Zhang, RK Nahm, MA DiFeo, JR Engstrom AVS 15th International Conference on Atomic Layer Deposition, 2015 | | 2015 |