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Jiun-Ruey Chen
Jiun-Ruey Chen
Staff Research Engineer, Intel Corporation
在 intel.com 的电子邮件经过验证
标题
引用次数
引用次数
年份
Tuning of coupling and surface quality of PbS nanocrystals via a combined ammonium sulfide and iodine treatment
H Zhang, J Yang, JR Chen, JR Engstrom, T Hanrath, FW Wise
The Journal of Physical Chemistry Letters 7 (4), 642-646, 2016
212016
Design and characterization of a microreactor for spatially confined atomic layer deposition and in situ UHV surface analysis
JR Chen, W Zhang, RK Nahm, MA DiFeo, JR Engstrom
Journal of Vacuum Science & Technology A 35 (6), 2017
92017
Systematic Studies into the Area Selectivity of Chemical Vapor Deposition Polymerization
X Zhong, R Jordan, JR Chen, J Raymond, J Lahann
ACS Applied Materials & Interfaces 15 (17), 21618-21628, 2023
62023
Interconnect structures with area selective adhesion or barrier materials for low resistance vias in integrated circuits
C Jezewski, JR Chen, M Reshotko, JM Blackwell, M Metz, CY Lin
EP Patent 3,993,019, 2022
42022
Subtractively patterned interconnect structures for integrated circuits
K Lin, N Sato, T Tronic, M Christenson, C Jezewski, JR Chen, J Blackwell, ...
US Patent 11,444,024, 2022
32022
Alternative routes to atomic layer deposition: reactor design and process development
JR Chen
http://doi.org/10.7298/X4PR7T4F, 2017
12017
Fluidic Self Alignment for Hybrid Bonding Using Intel Process
F Eid, Y Shi, G Naderi, SB Sinha, R Jordan, W Li, C El Helou, F Bedoya, ...
2024 IEEE 74th Electronic Components and Technology Conference (ECTC), 2037-2041, 2024
2024
In situ formation of inhibitor species through catalytic surface reactions during area-selective atomic layer deposition of TaN
MJM Merkx, I Tezsevin, P Yu, T Janssen, RHGM Heinemans, RJ Lengers, ...
The Journal of Chemical Physics 160 (20), 2024
2024
Unfolding an Elusive Area-Selective Deposition Process: Atomic Layer Deposition of TiO2 and TiON on SiN vs SiO2
A Mameli, K Tapily, J Shen, F Roozeboom, M Lu, D O’Meara, ...
ACS Applied Materials & Interfaces 16 (11), 14288-14295, 2024
2024
Self-assembled monolayer on a dielectric for transition metal dichalcogenide growth for stacked 2d channels
CH Naylor, K Maxey, KP O'brien, C Dorow, S Lee, AV Penumatcha, ...
US Patent App. 17/850,078, 2023
2023
Fill of vias in single and dual damascene structures using self-assembled monolayer
JR Chen, C Jezewski, J Plombon, M Reshotko, M Kobrinsky, ...
US Patent App. 17/558,423, 2023
2023
Integrated circuits with max or mx conductive materials
CH Naylor, CJ Jezewski, JD Bielefeld, JR Chen, RV Chebiam, ...
US Patent App. 17/557,128, 2023
2023
Staggered vertically spaced integrated circuit line metallization with differential vias & metal-selective deposition
E Karpov, M Reshotko, SB Clendenning, JR Chen, M Metz
US Patent App. 17/560,085, 2023
2023
Probing strategies for selective deposition that exploit competitive interactions
T Suh, HW Sohn, JR Chen, W Zheng, JR Engstrom
AVS 65th International Symposium & Exhibition, 2018
2018
Examination of alternative approaches to self-aligned, selective area atomic layer deposition
JR Chen, W Zhang, T Suh, JR Engstrom
AVS 16th International Conference on Atomic Layer Deposition, 2016
2016
Design and characterization of a microreactor for thin film deposition and in situ surface analysis
JR Chen, W Zhang, RK Nahm, MA DiFeo, JR Engstrom
AVS 15th International Conference on Atomic Layer Deposition, 2015
2015
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