| Back-biasing to performance and reliability evaluation of UTBB FDSOI, bulk FinFETs, and SOI FinFETs WT Chang, CT Shih, JL Wu, SW Lin, LG Cin, WK Yeh IEEE Transactions on Nanotechnology 17 (1), 36-40, 2017 | 32 | 2017 |
| Field electrons intercepted by coplanar gates in nanoscale air channel WT Chang, PH Pao IEEE Transactions on Electron Devices 66 (9), 3961-3966, 2019 | 26 | 2019 |
| Vertical field emission air-channel diodes and transistors WT Chang, HJ Hsu, PH Pao Micromachines 10 (12), 858, 2019 | 22 | 2019 |
| Electrical characterization of microelectromechanical silicon carbide resonators WT Chang, C Zorman Sensors 8 (9), 5759-5774, 2008 | 21 | 2008 |
| Impact of fin width and back bias under hot carrier injection on double-gate FinFETs WT Chang, LG Cin, WK Yeh IEEE Transactions on Device and Materials Reliability 15 (1), 86-89, 2015 | 18 | 2015 |
| Metal-based asymmetric field emission diodes operated in the air WT Chang, TY Chuang, CW Su Microelectronic Engineering 232, 111418, 2020 | 17 | 2020 |
| Back bias modulation of UTBB FDSOI, bulk FinFET, and SOI FinFET WT Chang, SW Lin, CT Shih, WK Yeh 2016 IEEE International Nanoelectronics Conference (INEC), 1-2, 2016 | 13 | 2016 |
| Piezoresistive coefficients of< 1 1 0> silicon-on-insulator MOSFETs with 0.135/0.45/10 micrometers channel length with external forces WT Chang, JA Lin Microelectronic engineering 86 (7-9), 1965-1968, 2009 | 13 | 2009 |
| Determination of Young’s moduli of 3C (110) single-crystal and (111) polycrystalline silicon carbide from operating frequencies W Chang, C Zorman Journal of materials science 43, 4512-4517, 2008 | 13 | 2008 |
| Performance dependence on width-to-length ratio of Si Cap/SiGe channel MOSFETs WT Chang, YS Lin IEEE transactions on electron devices 60 (11), 3663-3668, 2013 | 10 | 2013 |
| External stresses on tensile and compressive contact etching stop layer SOI MOSFETs WT Chang, CC Wang, JA Lin, WK Yeh IEEE transactions on electron devices 57 (8), 1889-1894, 2010 | 10 | 2010 |
| Energy dissipation in folded-beam MEMS resonators made from single crystal and polycrystalline 3C-SiC films WT Chang, M Mehregany, CA Zorman 2007 2nd IEEE International Conference on Nano/Micro Engineered and …, 2007 | 10 | 2007 |
| Modifying threshold voltages to n-And p-Type FinFETs by work function metal stacks WT Chang, MH Li, CH Hsu, WC Lin, WK Yeh IEEE Open Journal of Nanotechnology 2, 72-77, 2021 | 9 | 2021 |
| Field emission air-channel devices as a voltage adder WT Chang, MC Cheng, TY Chuang, MY Tsai Nanomaterials 10 (12), 2378, 2020 | 9 | 2020 |
| Grain size control of (111) polycrystalline 3C-SiC films by doping used as folded-beam MEMS resonators for energy dissipation WT Chang, C Zorman Microsystem technologies 15, 875-880, 2009 | 9 | 2009 |
| Metal-electrode-sandwiched quartz crystal-based oscillator as proximity sensor WT Chang Sensors and Actuators A: Physical 171 (2), 292-296, 2011 | 7 | 2011 |
| Temperature coefficient of resistance related to amorphous silicon/metal contact design of microbolometers JH Su, WK Yeh, WT Chang, BL Wu, JM Lu, JH Wang, YK Fang, PY Chen 2016 3rd International Conference on Devices, Circuits and Systems (ICDCS …, 2016 | 5 | 2016 |
| Threshold voltage and transconductance shifting reliance on strained-SiGe channel dimension WT Chang, YS Lin, CT Shih Solid-State Electronics 110, 10-13, 2015 | 4 | 2015 |
| Geometric design of microbolometers made from CMOS polycrystalline silicon WT Chang, Y Liang IEEE Sensors Journal 15 (1), 264-268, 2014 | 4 | 2014 |
| Electromagnetic intermodulation interference using quartz oscillators C Wen-Teng, T Kuei-Jie, L Su-Hao 2014 IEEE International Frequency Control Symposium (FCS), 1-5, 2014 | 4 | 2014 |
