| Effects of TiN Top Electrode Texturing on Ferroelectricity in Hf1–xZrxO2 R Athle, AEO Persson, A Irish, H Menon, R Timm, M Borg ACS applied materials & interfaces 13 (9), 11089-11095, 2021 | 39 | 2021 |
| Reduced annealing temperature for ferroelectric HZO on InAs with enhanced polarization AEO Persson, R Athle, P Littow, KM Persson, J Svensson, M Borg, ... Applied Physics Letters 116 (6), 2020 | 37 | 2020 |
| A method for estimating defects in ferroelectric thin film MOSCAPs AEO Persson, R Athle, J Svensson, M Borg, LE Wernersson Applied Physics Letters 117 (24), 2020 | 21 | 2020 |
| Top Electrode Engineering for Freedom in Design and Implementation of Ferroelectric Tunnel Junctions Based on Hf1–xZrxO2 R Athle, AEO Persson, A Troian, M Borg ACS Applied Electronic Materials 4 (3), 1002-1009, 2022 | 17 | 2022 |
| Improved Endurance of Ferroelectric HfxZr1–xO2 Integrated on InAs Using Millisecond Annealing R Athle, T Blom, A Irish, AEO Persson, LE Wernersson, R Timm, M Borg Advanced Materials Interfaces 9 (27), 2201038, 2022 | 12 | 2022 |
| Integration of Ferroelectric HfxZr1-xO2 on Vertical III-V Nanowire Gate-All-Around FETs on Silicon AEO Persson, Z Zhu, R Athle, LE Wernersson IEEE Electron Device Letters 43 (6), 854-857, 2022 | 10 | 2022 |
| Ferroelectric-Antiferroelectric Transition of Hf1–xZrxO2 on Indium Arsenide with Enhanced Ferroelectric Characteristics for Hf0.2Zr0.8O2 H Dahlberg, AEO Persson, R Athle, LE Wernersson ACS Applied Electronic Materials 4 (12), 6357-6363, 2022 | 8 | 2022 |
| Fabrication of Single‐Crystalline InSb‐on‐Insulator by Rapid Melt Growth H Menon, NP Morgan, C Hetherington, R Athle, M Steer, I Thayne, ... physica status solidi (a) 219 (4), 2100467, 2022 | 8 | 2022 |
| Improved quality of InSb-on-insulator microstructures by flash annealing into melt H Menon, L Södergren, R Athle, J Johansson, M Steer, I Thayne, M Borg Nanotechnology 32 (16), 165602, 2021 | 7 | 2021 |
| Impact of Temperature-Induced Oxide Defects on HfxZr1−xO2 Ferroelectric Tunnel Junction Memristor Performance R Athle, M Borg IEEE Transactions on Electron Devices 70 (3), 1412-1416, 2023 | 5 | 2023 |
| Ferroelectric Tunnel Junction Memristors for In‐Memory Computing Accelerators R Athle, M Borg Advanced Intelligent Systems 6 (3), 2300554, 2024 | 2 | 2024 |
| Ferroelectric Memristors-Materials, Interfaces and Applications R Athle | | 2024 |
| Improved Endurance of Ferroelectric HfxZr1–xO2 Integrated on InAs Using Millisecond Annealing (Adv. Mater. Interfaces 27/2022) R Athle, T Blom, A Irish, AEO Persson, LE Wernersson, R Timm, M Borg Advanced Materials Interfaces 9 (27), 2270150, 2022 | | 2022 |
| Effects of TiN Top Electrode Texturing on Ferroelectricity in Hf₁–ₓZrₓO₂ R Athle, AEO Persson, A Irish, H Menon, R Timm, M Borg | | 2021 |
