| Esaki diodes in van der Waals heterojunctions with broken-gap energy band alignment R Yan, S Fathipour, Y Han, B Song, S Xiao, M Li, N Ma, V Protasenko, ... Nano letters 15 (9), 5791-5798, 2015 | 366 | 2015 |
| Exfoliated multilayer MoTe2 field-effect transistors S Fathipour, N Ma, WS Hwang, V Protasenko, S Vishwanath, HG Xing, ... Applied Physics Letters 105 (19), 2014 | 206 | 2014 |
| Reconfigurable Ion Gating of 2H-MoTe2 Field-Effect Transistors Using Poly(ethylene oxide)-CsClO4 Solid Polymer Electrolyte H Xu, S Fathipour, EW Kinder, AC Seabaugh, SK Fullerton-Shirey ACS nano 9 (5), 4900-4910, 2015 | 148 | 2015 |
| Atomic Layer Deposition of Al2O3 on WSe2 Functionalized by Titanyl Phthalocyanine JH Park, S Fathipour, I Kwak, K Sardashti, CF Ahles, SF Wolf, M Edmonds, ... ACS nano 10 (7), 6888-6896, 2016 | 89 | 2016 |
| Synthesized multiwall MoS2 nanotube and nanoribbon field-effect transistors S Fathipour, M Remskar, A Varlec, A Ajoy, R Yan, S Vishwanath, ... Applied Physics Letters 106 (2), 2015 | 84 | 2015 |
| Multiwall MoS2 tubes as optical resonators DR Kazanov, AV Poshakinskiy, VY Davydov, AN Smirnov, IA Eliseyev, ... Applied Physics Letters 113 (10), 2018 | 38 | 2018 |
| Gate-Controlled WSe2 Transistors Using a Buried Triple-Gate Structure MR Müller, R Salazar, S Fathipour, H Xu, K Kallis, U Künzelmann, ... Nanoscale Research Letters 11, 1-6, 2016 | 31 | 2016 |
| Electric-double-layer doping of WSe2 field-effect transistors using polyethylene-oxide cesium perchlorate S Fathipour, P Pandey, S Fullerton-Shirey, A Seabaugh Journal of Applied Physics 120 (23), 2016 | 30 | 2016 |
| Enhanced carrier transport by transition metal doping in WS 2 field effect transistors M Liu, S Wei, S Shahi, HN Jaiswal, P Paletti, S Fathipour, M Remškar, ... Nanoscale 12 (33), 17253-17264, 2020 | 29 | 2020 |
| Steep slope transistors: Tunnel FETs and beyond A Seabaugh, C Alessandri, MA Heidarlou, HM Li, L Liu, H Lu, S Fathipour, ... 2016 46th European Solid-State Device Research Conference (ESSDERC), 349-351, 2016 | 25 | 2016 |
| Steep subthreshold swing tunnel FETs: GaN/InN/GaN and transition metal dichalcogenide channels A Seabaugh, S Fathipour, W Li, H Lu, JH Park, AC Kummel, D Jena, ... 2015 IEEE International Electron Devices Meeting (IEDM), 35.6. 1-35.6. 4, 2015 | 25 | 2015 |
| IEEE International Electron Devices Meeting (IEDM) A Seabaugh, S Fathipour, W Li, H Lu, JH Park, AC Kummel, D Jena, ... IEEE, Washington, DC, USA, 2015 | 17 | 2015 |
| Reconfigurable Electric Double Layer Doping in an MoS2 Nanoribbon Transistor C Alessandri, S Fathipour, H Li, I Kwak, A Kummel, M Remškar, ... IEEE Transactions on Electron Devices 64 (12), 5217-5222, 2017 | 12 | 2017 |
| Record high current density and low contact resistance in MoS2 FETs by ion doping S Fathipour, HM Li, M Remškar, L Yeh, W Tsai, Y Lin, S Fullerton-Shirey, ... 2016 International Symposium on VLSI Technology, Systems and Application …, 2016 | 10 | 2016 |
| Reducing adhesion energy of nano-electro-mechanical relay contacts by self-assembled Perfluoro (2, 3-Dimethylbutan-2-ol) coating S Fathipour, SF Almeida, ZA Ye, B Saha, F Niroui, TJ King Liu, J Wu AIP Advances 9 (5), 2019 | 9 | 2019 |
| Demonstration of electric double layer p-i-n junction in WSe2 S Fathipour, P Paletti, S Fullerton-Shirey, A Seabaugh 2016 74th Annual Device Research Conference (DRC), 1-2, 2016 | 8 | 2016 |
| Low-leakage WSe2 FET gate-stack using titanyl phthalocyanine seeding layer for atomic layer deposition of Al2O3 S Fathipour, JH Park, A Kummel, A Seabaugh 2015 73rd Annual Device Research Conference (DRC), 213-214, 2015 | 6 | 2015 |
| Quantitative, experimentally-validated, model of MoS2 nanoribbon Schottky field-effect transistors from subthreshold to saturation P Paletti, S Fathipour, M Remškar, A Seabaugh Journal of Applied Physics 127 (6), 2020 | 5 | 2020 |
| Exfoliated MoTe2 field-effect transistor S Fathipour, WS Hwang, T Kosel, HG Xing, W Haensch, D Jena, ... 71st Device Research Conference, 115-116, 2013 | 5 | 2013 |
| Electric-double-layer p–i–n junctions in WSe2 S Fathipour, P Paletti, SK Fullerton-Shirey, AC Seabaugh Scientific Reports 10 (1), 12890, 2020 | 4 | 2020 |
