| Two-dimensional materials and their prospects in transistor electronics F Schwierz, J Pezoldt, R Granzner Nanoscale 7 (18), 8261-8283, 2015 | 753 | 2015 |
| Group III nitride and SiC based MEMS and NEMS: materials properties, technology and applications V Cimalla, J Pezoldt, O Ambacher Journal of Physics D: Applied Physics 40 (20), S19, 2007 | 475 | 2007 |
| Phase stabilization and phonon properties of single crystalline rhombohedral indium oxide CY Wang, Y Dai, J Pezoldt, B Lu, T Kups, V Cimalla, O Ambacher Crystal growth and Design 8 (4), 1257-1260, 2008 | 155 | 2008 |
| Nanoelectromechanical devices for sensing applications V Cimalla, F Niebelschütz, K Tonisch, C Foerster, K Brueckner, I Cimalla, ... Sensors and Actuators B: Chemical 126 (1), 24-34, 2007 | 146 | 2007 |
| Phase selective growth and properties of rhombohedral and cubic indium oxide CY Wang, V Cimalla, H Romanus, T Kups, G Ecke, T Stauden, M Ali, ... Applied physics letters 89 (1), 2006 | 131 | 2006 |
| Growth of cubic InN on -plane sapphire V Cimalla, J Pezoldt, G Ecke, R Kosiba, O Ambacher, L Spieß, G Teichert, ... Applied physics letters 83 (17), 3468-3470, 2003 | 107 | 2003 |
| Integrated multilayer stretchable printed circuit boards paving the way for deformable active matrix S Biswas, A Schoeberl, Y Hao, J Reiprich, T Stauden, J Pezoldt, ... Nature communications 10 (1), 4909, 2019 | 87 | 2019 |
| Densification of thin aluminum oxide films by thermal treatments V Cimalla, M Baeumler, L Kirste, M Prescher, B Christian, T Passow, ... Materials Sciences and Applications 5 (08), 628, 2014 | 81 | 2014 |
| Nanomechanics of single crystalline tungsten nanowires V Cimalla, CC Röhlig, J Pezoldt, M Niebelschütz, O Ambacher, ... Journal of Nanomaterials 2008 (1), 638947, 2008 | 68 | 2008 |
| Growth of thin β-SiC layers by carbonization of Si surfaces by rapid thermal processing V Cimalla, KV Karagodina, J Pezoldt, G Eichhorn Materials Science and Engineering: B 29 (1-3), 170-175, 1995 | 67 | 1995 |
| High-frequency performance of GaN high-electron mobility transistors on 3C-SiC/Si substrates with Au-free ohmic contacts W Jatal, U Baumann, K Tonisch, F Schwierz, J Pezoldt IEEE Electron device letters 36 (2), 123-125, 2014 | 66 | 2014 |
| Effect of dislocations on electrical and electron transport properties of InN thin films. I. Strain relief and formation of a dislocation network V Lebedev, V Cimalla, J Pezoldt, M Himmerlich, S Krischok, JA Schaefer, ... Journal of applied physics 100 (9), 2006 | 65 | 2006 |
| Preparation of single phase tungsten carbide by annealing of sputtered tungsten-carbon layers H Romanus, V Cimalla, JA Schaefer, L Spieß, G Ecke, J Pezoldt Thin Solid Films 359 (2), 146-149, 2000 | 64 | 2000 |
| Micro‐and nano‐electromechanical resonators based on SiC and group III‐nitrides for sensor applications K Brueckner, F Niebelschuetz, K Tonisch, C Foerster, V Cimalla, ... physica status solidi (a) 208 (2), 357-376, 2011 | 56 | 2011 |
| Graphene nanoribbons for electronic devices Z Geng, B Hähnlein, R Granzner, M Auge, AA Lebedev, VY Davydov, ... Annalen der Physik 529 (11), 1700033, 2017 | 54 | 2017 |
| Cubic GaN epilayers grown by molecular beam epitaxy on thin β-SiC/Si (001) substrates DJ As, T Frey, D Schikora, K Lischka, V Cimalla, J Pezoldt, R Goldhahn, ... Applied Physics Letters 76 (13), 1686-1688, 2000 | 54 | 2000 |
| Nanostructured plasma etched, magnetron sputtered nanolaminar Cr2AlC MAX phase thin films R Grieseler, B Hähnlein, M Stubenrauch, T Kups, M Wilke, M Hopfeld, ... Applied Surface Science 292, 997-1001, 2014 | 50 | 2014 |
| Electrical characterization of SiC/Si heterostructures with Ge-modified interfaces J Pezoldt, C Förster, P Weih, P Masri Applied surface science 184 (1-4), 79-83, 2001 | 50 | 2001 |
| The estimation of sputtering yields for SiC and Si G Ecke, R Kosiba, V Kharlamov, Y Trushin, J Pezoldt Nuclear Instruments and Methods in Physics Research Section B: Beam …, 2002 | 49 | 2002 |
| Side-gate graphene field-effect transistors with high transconductance B Hähnlein, B Händel, J Pezoldt, H Töpfer, R Granzner, F Schwierz Applied Physics Letters 101 (9), 2012 | 48 | 2012 |
