| An ultra low voltage ultra low power CMOS UWB LNA using forward body biasing A Dehqan, E Kargaran, K Mafinezhad, H Nabovati 2012 IEEE 55th International Midwest Symposium on Circuits and Systems …, 2012 | 16 | 2012 |
| Floating bulk cascode class-E power amplifier AR Dehqan, S Toofan, H Lotfi IEEE Transactions on Circuits and Systems II: Express Briefs 66 (4), 537-541, 2018 | 12 | 2018 |
| Design of low-voltage low-power Dual-Band LNA with using DS method to improve linearity AR Dehqan, E Kargaran, K Mafinezhad 20th Iranian Conference on Electrical Engineering (ICEE2012), 88-91, 2012 | 9 | 2012 |
| Design of 0.45V,1.3mW ultra high gain CMOS LNA using gm-boosting and forward body biasing technique A Dehqan, E Kargaran, K Mafinezhad, H Nabovati 2012 IEEE 55th International Midwest Symposium on Circuits and Systems …, 2012 | 5 | 2012 |
| A highly efficient class-EF2 power amplifier in GaAs pHEMT technology AR Dehqan, S Toofan, A Medi Analog Integrated Circuits and Signal Processing 93, 197-203, 2017 | 3 | 2017 |
| A self-control technique for high efficiency class-E CMOS power amplifier AR Dehqan, S Toofan Microelectronics Journal 46 (12), 1258-1262, 2015 | 3 | 2015 |
| Design of low voltage low power dual-band LNA with forward body biasing technique AR Dehqan, K Mafinezhad, E Kargaran, H Nabovati 2011 18th IEEE International Conference on Electronics, Circuits, and …, 2011 | 2 | 2011 |
| High efficiency class E power amplifier with drain source merging technique M Padash, A Dehqan, M Yargholi, S Toofan 2014 22nd Iranian Conference on Electrical Engineering (ICEE), 519-522, 2014 | 1 | 2014 |
| Resonance gate bias cascode class-E power amplifier in GaAs pHEMT technology AR Dehqan, S Toofan Analog Integrated Circuits and Signal Processing 98, 545-553, 2019 | | 2019 |
| Design of 0.5 V, 450µW CMOS Current Reuse LNA With the Gate Resistance Used for Input Matching and Forward Body Bias Technique E Kargaran, SI Tous, MM Ravari, AR Dehqan, K Mafinezhad, H Nabovati | | |
