| Hexagonal boron nitride is an indirect bandgap semiconductor G Cassabois, P Valvin, B Gil Nature photonics 10 (4), 262-266, 2016 | 1241 | 2016 |
| Internal electric field in wurtzite quantum wells C Morhain, T Bretagnon, P Lefebvre, X Tang, P Valvin, T Guillet, B Gil, ... Physical Review B—Condensed Matter and Materials Physics 72 (24), 241305, 2005 | 242 | 2005 |
| Direct band-gap crossover in epitaxial monolayer boron nitride C Elias, P Valvin, T Pelini, A Summerfield, CJ Mellor, TS Cheng, L Eaves, ... Nature communications 10 (1), 2639, 2019 | 239 | 2019 |
| Radiative lifetime of a single electron-hole pair in quantum dots T Bretagnon, P Lefebvre, P Valvin, R Bardoux, T Guillet, T Taliercio, B Gil, ... Physical Review B—Condensed Matter and Materials Physics 73 (11), 113304, 2006 | 150 | 2006 |
| Giant Rabi splitting between localized mixed plasmon-exciton states in a two-dimensional array of nanosize metallic disks in an organic semiconductor J Bellessa, C Symonds, K Vynck, A Lemaitre, A Brioude, L Beaur, ... Physical Review B—Condensed Matter and Materials Physics 80 (3), 033303, 2009 | 137 | 2009 |
| Deep ultraviolet emission in hexagonal boron nitride grown by high-temperature molecular beam epitaxy TQP Vuong, G Cassabois, P Valvin, E Rousseau, A Summerfield, ... 2D Materials 4 (2), 021023, 2017 | 128 | 2017 |
| Isotope engineering of van der Waals interactions in hexagonal boron nitride TQP Vuong, S Liu, A Van der Lee, R Cuscó, L Artús, T Michel, P Valvin, ... Nature materials 17 (2), 152-158, 2018 | 120 | 2018 |
| Phonon-photon mapping in a color center in hexagonal boron nitride TQP Vuong, G Cassabois, P Valvin, A Ouerghi, Y Chassagneux, C Voisin, ... Physical review letters 117 (9), 097402, 2016 | 104 | 2016 |
| Micro epitaxial lateral overgrowth of GaN/sapphire by metal organic vapour phase epitaxy E Frayssinet, B Beaumont, JP Faurie, P Gibart, Z Makkai, B Pécz, ... MRS Internet Journal of Nitride Semiconductor Research 7, 1-7, 2002 | 101 | 2002 |
| Intervalley scattering in hexagonal boron nitride G Cassabois, P Valvin, B Gil Physical review B 93 (3), 035207, 2016 | 82 | 2016 |
| Time-resolved spectroscopy on GaN nanocolumns grown by plasma assisted molecular beam epitaxy on Si substrates P Corfdir, P Lefebvre, J Ristić, P Valvin, E Calleja, A Trampert, JD Ganière, ... Journal of Applied Physics 105 (1), 2009 | 80 | 2009 |
| Observation and modeling of the time-dependent descreening of internal electric field in a wurtzite quantum well after high photoexcitation P Lefebvre, S Kalliakos, T Bretagnon, P Valvin, T Taliercio, B Gil, ... Physical Review B 69 (3), 035307, 2004 | 74 | 2004 |
| Deep-UV nitride-on-silicon microdisk lasers J Selles, C Brimont, G Cassabois, P Valvin, T Guillet, I Roland, Y Zeng, ... Scientific Reports 6 (1), 21650, 2016 | 73 | 2016 |
| Time dependence of the photoluminescence of GaN/AlN quantum dots under high photoexcitation T Bretagnon, S Kalliakos, P Lefebvre, P Valvin, B Gil, N Grandjean, ... Physical Review B 68 (20), 205301, 2003 | 56 | 2003 |
| Shallow and deep levels in carbon-doped hexagonal boron nitride crystals T Pelini, C Elias, R Page, L Xue, S Liu, J Li, JH Edgar, A Dréau, ... Physical Review Materials 3 (9), 094001, 2019 | 52 | 2019 |
| Laser emission with excitonic gain in a ZnO planar microcavity T Guillet, C Brimont, P Valvin, B Gil, T Bretagnon, F Médard, M Mihailovic, ... Applied Physics Letters 98 (21), 2011 | 46 | 2011 |
| Internal quantum efficiency in yellow-amber light emitting AlGaN-InGaN-GaN heterostructures TH Ngo, B Gil, P Valvin, B Damilano, K Lekhal, P De Mierry Applied Physics Letters 107 (12), 2015 | 44 | 2015 |
| Band gap measurements of monolayer h-BN and insights into carbon-related point defects RJP Román, FJRC Costa, A Zobelli, C Elias, P Valvin, G Cassabois, B Gil, ... 2D Materials 8 (4), 044001, 2021 | 42 | 2021 |
| Overtones of interlayer shear modes in the phonon-assisted emission spectrum of hexagonal boron nitride TQP Vuong, G Cassabois, P Valvin, V Jacques, R Cuscó, L Artús, B Gil Physical review B 95 (4), 045207, 2017 | 42 | 2017 |
| Phonon symmetries in hexagonal boron nitride probed by incoherent light emission TQP Vuong, G Cassabois, P Valvin, V Jacques, A van Der Lee, A Zobelli, ... 2D Materials 4 (1), 011004, 2016 | 40 | 2016 |
Bernard GILCNRS university Montpellier在 umontpellier.fr 的电子邮件经过验证
