| Correlation between strain and dielectric properties in ZrTiO4 thin films T Kim, J Oh, B Park, KS Hong Applied Physics Letters 76 (21), 3043-3045, 2000 | 99 | 2000 |
| Dielectric properties and strain analysis in paraelectric ZrTiO4 thin films deposited by DC magnetron sputtering T Kim, J Oh, B Park, KS Hong Japanese Journal of Applied Physics 39 (7R), 4153, 2000 | 48 | 2000 |
| Heat flow model for pulsed laser melting and rapid solidification of ion implanted GaAs T Kim, MR Pillai, MJ Aziz, MA Scarpulla, OD Dubon, KM Yu, JW Beeman, ... Journal of Applied Physics 108 (1), 2010 | 27 | 2010 |
| Magnetic properties of ion implanted Ge1− xMnx thin films solidified through pulsed laser melting MC Dolph, T Kim, W Yin, D Recht, W Fan, J Yu, MJ Aziz, J Lu, SA Wolf Journal of Applied Physics 109 (9), 2011 | 11 | 2011 |
| Composition dependence of Schottky barrier heights and bandgap energies of GaNxAs1− x synthesized by ion implantation and pulsed-laser melting T Kim, K Alberi, OD Dubon, MJ Aziz, V Narayanamurti Journal of Applied Physics 104 (11), 2008 | 11 | 2008 |
| Two dimensionally patterned GaNxAs1− x/GaAs nanostructures using N+ implantation followed by pulsed laser melting T Kim, MJ Aziz, V Narayanamurti Applied Physics Letters 93 (10), 2008 | 4 | 2008 |
| Room-temperature photoresponse of Schottky photodiodes based on GaNxAs1− x synthesized by ion implantation and pulsed-laser melting W Yi, T Kim, I Shalish, M Loncar, MJ Aziz, V Narayanamurti Applied Physics Letters 97 (15), 2010 | 1 | 2010 |
| Electrical and optical characterization and nanoscale patterning of gallium nitrogen arsenide synthesized by energetic beams T Kim Harvard University, 2008 | 1 | 2008 |
| Electrical and Optical characterization of GaNxAs1-x fabricated using Ion Implantation and Pulsed Laser Melting T Kim, MJ Aziz, V Narayanamurti, K Alberi, OD Dubon APS March Meeting Abstracts, K1. 189, 2009 | | 2009 |
| Pulsed Laser Melting and Resolidification of GeMn Thin Films M Dolph, W Yin, J Lu, S Wolf, T Kim, M Aziz APS March Meeting Abstracts, X22. 012, 2009 | | 2009 |
| 2D patterned GaNxAs1-x Quantum structures using Ion Implantation and Pulsed Laser Melting T Kim, MJ Aziz, V Narayanamurti APS March Meeting Abstracts, L23. 006, 2008 | | 2008 |
| Two dimensionally patterned GaNxAs1-x Quantum Dots Fabricated using Ion Implantation and Pulsed Laser Melting characterized by Ballistic Electron Emission … T Kim, MJ Aziz, V Narayanamurti APS March Meeting Abstracts, K1. 050, 2007 | | 2007 |
| Dielectric properties of ZrTiO4 thin films deposited by DC magnetron reactive sputtering T Kim, B Park, KS Hong Journal of Korean Vacuum Science & Technology 3 (2), 130-133, 1999 | | 1999 |
| Room-temperature photoresponse of Schottky photodiodes based on GaNxAs1-x synthesized by ion implantation and pulsed-laser melting W Yi, T Kim, I Shalish, M Loncar, MJ Aziz, V Narayanamurti IEEE Transactions on Information Theory 39 (3), 946-956, 1993 | | 1993 |
