Semiconductor laser diode H Ohta, K Okamoto US Patent 7,843,980, 2010 | 307 | 2010 |
Light-emitting device K Okamoto, H Ohta US Patent 8,017,932, 2011 | 300 | 2011 |
Semi-polar III-nitride optoelectronic devices on M-plane substrates with miscuts less than+/-15 degrees in the C-direction PS Hsu, KM Kelchner, RM Farrell, DA Haeger, H Ohta, A Tyagi, ... US Patent 9,077,151, 2015 | 265 | 2015 |
Light emitting device K Okamoto, H Ohta US Patent App. 12/076,762, 2008 | 265 | 2008 |
Semiconductor light-emitting element and method for fabrication the same K Okamoto, H Ohta US Patent 8,124,982, 2012 | 258 | 2012 |
Superluminescent diodes by crystallographic etching MT Hardy, YD Lin, H Ohta, SP DenBaars, JS Speck, S Nakamura, ... US Patent App. 12/913,638, 2011 | 254 | 2011 |
Vertical GaN-based trench gate metal oxide semiconductor field-effect transistors on GaN bulk substrates H Otake, K Chikamatsu, A Yamaguchi, T Fujishima, H Ohta Applied physics express 1 (1), 011105, 2008 | 250 | 2008 |
Molecular dynamics evaluation of self-diffusion in Yukawa systems H Ohta, S Hamaguchi Physics of Plasmas 7 (11), 4506-4514, 2000 | 211 | 2000 |
Wave dispersion relations in Yukawa fluids H Ohta, S Hamaguchi Physical review letters 84 (26), 6026, 2000 | 196 | 2000 |
Continuous-wave operation of m-plane InGaN multiple quantum well laser diodes K Okamoto, H Ohta, SF Chichibu, J Ichihara, H Takasu Japanese journal of applied physics 46 (3L), L187, 2007 | 177 | 2007 |
Dislocation-free m-plane InGaN/GaN light-emitting diodes on m-plane GaN single crystals K Okamoto, H Ohta, D Nakagawa, M Sonobe, J Ichihara, H Takasu Japanese journal of applied physics 45 (11L), L1197, 2006 | 168 | 2006 |
Partial strain relaxation via misfit dislocation generation at heterointerfaces in (Al,In)GaN epitaxial layers grown on semipolar GaN free standing substrates A Tyagi, F Wu, EC Young, A Chakraborty, H Ohta, R Bhat, K Fujito, ... Applied Physics Letters 95 (25), 251905, 2009 | 132 | 2009 |
AlGaN-cladding free green semipolar GaN based laser diode with a lasing wavelength of 506.4 nm A Tyagi, RM Farrell, KM Kelchner, CY Huang, PS Hsu, DA Haeger, ... Applied Physics Express 3 (1), 011002, 2009 | 119 | 2009 |
Molecular dynamics simulation of silicon and silicon dioxide etching by energetic halogen beams H Ohta, S Hamaguchi Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 19 (5 …, 2001 | 118 | 2001 |
Stacking fault formation in the long wavelength InGaN/GaN multiple quantum wells grown on -plane GaN F Wu, YD Lin, A Chakraborty, H Ohta, SP DenBaars, S Nakamura, ... Applied Physics Letters 96 (23), 231912, 2010 | 104 | 2010 |
GaN-based trench gate metal oxide semiconductor field effect transistors with over 100 cm2/(V s) channel mobility H Otake, S Egami, H Ohta, Y Nanishi, H Takasu Japanese Journal of Applied Physics 46 (7L), L599, 2007 | 103 | 2007 |
Classical interatomic potentials for Si–O–F and Si–O–Cl systems H Ohta, S Hamaguchi The Journal of Chemical Physics 115 (14), 6679-6690, 2001 | 102 | 2001 |
30-mW-class high-power and high-efficiency blue semipolar (1011) InGaN/GaN light-emitting diodes obtained by backside roughening technique Y Zhao, J Sonoda, CC Pan, S Brinkley, I Koslow, K Fujito, H Ohta, ... Applied physics express 3 (10), 102101, 2010 | 98 | 2010 |
Temperature dependence of polarized photoluminescence from nonpolar -plane InGaN multiple quantum wells for blue laser diodes M Kubota, K Okamoto, T Tanaka, H Ohta Applied Physics Letters 92 (1), 011920, 2008 | 98 | 2008 |
High quality InGaN/AlGaN multiple quantum wells for semipolar InGaN green laser diodes YD Lin, S Yamamoto, CY Huang, CL Hsiung, F Wu, K Fujito, H Ohta, ... Applied Physics Express 3 (8), 082001, 2010 | 94 | 2010 |