关注
Dmitry Kudryashov
Dmitry Kudryashov
未知所在单位机构
在 spbau.ru 的电子邮件经过验证
标题
引用次数
引用次数
年份
Low temperature growth of ITO transparent conductive oxide layers in oxygen-free environment by RF magnetron sputtering
D Kudryashov, A Gudovskikh, K Zelentsov
Journal of Physics: Conference Series 461 (1), 012021, 2013
362013
Study of GaP/Si heterojunction solar cells
AS Gudovskikh, KS Zelentsov, AI Baranov, DA Kudryashov, IA Morozov, ...
Energy Procedia 102, 56-63, 2016
312016
Kinetic peculiarities of anodic dissolution of silver and Ag–Au alloys under the conditions of oxide formation
A Vvedenskii, S Grushevskaya, D Kudryashov, T Kuznetsova
Corrosion Science 49 (12), 4523-4541, 2007
312007
Low temperature plasma enhanced deposition of GaP films on Si substrate
AS Gudovskikh, IA Morozov, AV Uvarov, DA Kudryashov, EV Nikitina, ...
Journal of Vacuum Science & Technology A 36 (2), 2018
272018
Si doped GaP layers grown on Si wafers by low temperature PE-ALD
AS Gudovskikh, AV Uvarov, IA Morozov, AI Baranov, DA Kudryashov, ...
Journal of Renewable and Sustainable Energy 10 (2), 2018
252018
The study of latex sphere lithography for high aspect ratio dry silicon etching
I Morozov, A Gudovskikh, A Uvarov, A Baranov, V Sivakov, D Kudryashov
physica status solidi (a) 217 (4), 1900535, 2020
232020
Low temperature epitaxial growth of GaP on Si by atomic-layer deposition with plasma activation
AV Uvarov, AS Gudovskikh, VN Nevedomskiy, AI Baranov, ...
Journal of Physics D: Applied Physics 53 (34), 345105, 2020
192020
Design of multijunction GaPNAs/Si heterostructure solar cells by computer simulation
DA Kudryashov, AS Gudovskikh, EV Nikitina, AY Egorov
Semiconductors 48, 381-386, 2014
192014
Modeling, synthesis and study of highly efficient solar cells based on III-nitride nanowire arrays grown on Si substrates
AM Mozharov, AD Bolshakov, DA Kudryashov, NV Kryzhanovskaya, ...
Journal of Physics: Conference Series 643 (1), 012115, 2015
182015
Nanoscale Cu2O films: Radio-frequency magnetron sputtering and structural and optical studies
DA Kudryashov, AS Gudovskikh, AV Babichev, AV Filimonov, ...
Semiconductors 51, 110-114, 2017
172017
The influence of the conditions of the anodic formation and the thickness of Ag (I) oxide nanofilm on its semiconductor properties
A Vvedenskii, S Grushevskaya, D Kudryashov, S Ganzha
Journal of Solid State Electrochemistry 14, 1401-1413, 2010
172010
Effect of the crystal face orientation and alloying with gold on the properties of thin anodic films of Ag (I) oxide: I. Photocurrent
DA Kudryashov, SN Grushevskaya, SV Ganzha, AV Vvedenskii
Protection of Metals and Physical Chemistry of Surfaces 45, 501-511, 2009
142009
Defect properties of InGaAsN layers grown as sub-monolayer digital alloys by molecular beam epitaxy
AI Baranov, AS Gudovskikh, DA Kudryashov, AA Lazarenko, IA Morozov, ...
Journal of Applied Physics 123 (16), 2018
122018
Formation of ZnO nanorods on seed layers for piezoelectric nanogenerators
AA Semenova, NA Lashkova, AI Maximov, VA Moshnikov, ...
Journal of Physics: Conference Series 917 (3), 032022, 2017
122017
Hydrogen passivation of the n-GaN nanowire/p-Si heterointerface
KY Shugurov, AM Mozharov, AD Bolshakov, VV Fedorov, GA Sapunov, ...
Nanotechnology 31 (24), 244003, 2020
112020
Interface Properties of GaP/Si Heterojunction Fabricated by PE‐ALD
AS Gudovskikh, AV Uvarov, IA Morozov, AI Baranov, DA Kudryashov, ...
physica status solidi (a) 216 (10), 1800617, 2019
102019
Investigation of AG (I) oxide films by combination of it RRDE and photopotential spectroscopy
A Vvedenskii, S Grushevskaya, D Kudryashov, S Ganzha
Surface and Interface Analysis: An International Journal devoted to the …, 2008
102008
Effect of Cryogenic Dry Etching on Minority Charge Carrier Lifetime in Silicon
DA Kudryashov, AS Gudovskikh, AI Baranov, IA Morozov, ...
physica status solidi (a) 217 (4), 1900534, 2020
92020
A. Jaffré, S. Le Gall, A. Darga, A. Brezard-Oudot, J.‑P
AS Gudovskikh, AV Uvarov, IA Morozov, AI Baranov, DA Kudryashov, ...
Kleider. Phys. Status Solidi A 216, 1800617, 2018
92018
Multijunction a-Si: H/c-Si solar cells with vertically-aligned architecture based on silicon nanowires
AS Gudovskikh, IA Morozov, DA Kudryashov, EV Nikitina, V Sivakov
Materials Today: Proceedings 4 (7), 6797-6803, 2017
92017
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