Crystal shape 2D modeling for transient CZ silicon crystal growth A Sabanskis, K Bergfelds, A Muiznieks, T Schröck, A Krauze Journal of Crystal Growth 377, 9-16, 2013 | 43 | 2013 |
Applicability of LES turbulence modeling for CZ silicon crystal growth systems with traveling magnetic field A Krauze, N Jēkabsons, A Muižnieks, A Sabanskis, U Lācis Journal of crystal growth 312 (21), 3225-3234, 2010 | 29 | 2010 |
3D modeling of doping from the atmosphere in floating zone silicon crystal growth A Sabanskis, K Surovovs, J Virbulis Journal of Crystal Growth 457, 65-71, 2017 | 20 | 2017 |
Simulation of the influence of gas flow on melt convection and phase boundaries in FZ silicon single crystal growth A Sabanskis, J Virbulis Journal of Crystal Growth 417, 51-57, 2015 | 18 | 2015 |
Hydrodynamical aspects of the floating zone silicon crystal growth process K Surovovs, A Muiznieks, A Sabanskis, J Virbulis Journal of crystal growth 401, 120-123, 2014 | 18 | 2014 |
Study of silicon crystal surface formation based on molecular dynamics simulation results G Barinovs, A Sabanskis, A Muiznieks Journal of crystal growth 391, 13-17, 2014 | 11 | 2014 |
Experimental and numerical analysis of air flow, heat transfer and thermal comfort in buildings with different heating systems A Sabanskis, J Virbulis Latvian Journal of Physics and Technical Sciences 53 (2), 20-30, 2016 | 10 | 2016 |
Numerical study of silicon crystal ridge growth G Barinovs, A Sabanskis, A Muiznieks Journal of crystal growth 401, 137-140, 2014 | 8 | 2014 |
Evaluation of the performance of published point defect parameter sets in cone and body phase of a 300 mm Czochralski silicon crystal A Sabanskis, M Plāte, A Sattler, A Miller, J Virbulis Crystals 11 (5), 460, 2021 | 7 | 2021 |
Modelling of thermal field and point defect dynamics during silicon single crystal growth using CZ technique A Sabanskis, J Virbulis Journal of Crystal Growth 519, 7-13, 2019 | 7 | 2019 |
Unsteady 3D LES modeling of turbulent melt flow with AC travelling EM fields for a laboratory model of the CZ silicon crystal growth system A Krauze, A Rudevičs, A Muižnieks, A Sabanskis, N Jekabsons, B Nacke Magnetohydrodynamics, 605, 2009 | 7 | 2009 |
Modelling of thermal field and point defect dynamics during silicon single crystal growth using CZ technique A Sabanskis, J Virbulis IOP Conference Series: Materials Science and Engineering 355 (1), 012003, 2018 | 6 | 2018 |
Development of numerical calculation of electromagnetic fields in FZ silicon crystal growth process A Muiznieks, K Lacis, A Rudevics, U Lacis, A Sabanskis, M Plate Magnetohydrodynamics 46 (4), 475-486, 2010 | 6 | 2010 |
Influence of DC and AC magnetic fields on melt motion in FZ large Si crystal growth K Lacis, A Muižnieks, A Rudevičs, A Sabanskis Magnetohydrodynamics 46 (2), 199-218, 2010 | 6 | 2010 |
Experimental and numerical investigation of laboratory crystal growth furnace for the development of model-based control of CZ process K Bergfelds, M Pudzs, A Sabanskis, J Virbulis Journal of Crystal Growth 522, 191-194, 2019 | 5 | 2019 |
Validation of mathematical model for CZ process using small-scale laboratory crystal growth furnace K Bergfelds, A Sabanskis, J Virbulis IOP Conference Series: Materials Science and Engineering 355 (1), 012004, 2018 | 4 | 2018 |
Numerical Evaluation of the Efficiency of an Indoor Air Cleaner under Different Heating Conditions A Sabanskis, DD Vidulejs, J Teličko, J Virbulis, A Jakovičs Atmosphere 14 (12), 1706, 2023 | 3 | 2023 |
Application of the Alexander–Haasen Model for Thermally Stimulated Dislocation Generation in FZ Silicon Crystals A Sabanskis, K Dadzis, R Menzel, J Virbulis Crystals 12 (2), 174, 2022 | 3 | 2022 |
Modelling of the influence of electromagnetic force on melt convection and dopant distribution at floating zone growth of silicon A Sabanskis, K Surovovs, A Krauze, M Plāte, J Virbulis Magnetohydrodynamics 51, 375-384, 2015 | 3 | 2015 |
Three-dimensional modelling of dopant transport in gas and melt during FZ silicon crystal growth A Sabanskis, K Surovovs, J Virbulis Magnetohydrodynamics 51 (1), 157-170, 2015 | 3 | 2015 |