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| Through gate fin isolation MT Bohr, SM Cea, BA Chappell US Patent 11,037,923, 2021 | 187 | 2021 |
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| High performance Hi-K+ metal gate strain enhanced transistors on (110) silicon P Packan, S Cea, H Deshpande, T Ghani, M Giles, O Golonzka, ... 2008 IEEE International Electron Devices Meeting, 1-4, 2008 | 87 | 2008 |
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