| GaN technology for power electronic applications: A review TJ Flack, BN Pushpakaran, SB Bayne Journal of Electronic Materials 45, 2673-2682, 2016 | 413 | 2016 |
| Overview of grid connected renewable energy based battery projects in USA AS Subburaj, BN Pushpakaran, SB Bayne Renewable and Sustainable Energy Reviews 45, 219-234, 2015 | 117 | 2015 |
| Single-pulse avalanche mode robustness of commercial 1200 V/80 mΩ SiC MOSFETs MD Kelley, BN Pushpakaran, SB Bayne IEEE Transactions on Power Electronics 32 (8), 6405-6415, 2016 | 100 | 2016 |
| Failure Analysis of 1200-V/150-A SiC MOSFET Under Repetitive Pulsed Overcurrent Conditions JA Schrock, BN Pushpakaran, AV Bilbao, WB Ray, EA Hirsch, MD Kelley, ... IEEE Transactions on Power Electronics 31 (3), 1816-1821, 2015 | 99 | 2015 |
| Commercial GaN-based power electronic systems: A review BN Pushpakaran, AS Subburaj, SB Bayne Journal of electronic materials 49, 6247-6262, 2020 | 83 | 2020 |
| Impact of silicon carbide semiconductor technology in Photovoltaic Energy System BN Pushpakaran, AS Subburaj, SB Bayne, J Mookken Renewable and Sustainable Energy Reviews 55, 971-989, 2016 | 58 | 2016 |
| Fast and accurate electro-thermal behavioral model of a commercial SiC 1200V, 80 mΩ power MOSFET BN Pushpakaran, SB Bayne, G Wang, J Mookken 2015 IEEE Pulsed Power Conference (PPC), 1-5, 2015 | 32 | 2015 |
| Electro-thermal transient simulation of silicon carbide power MOSFET BN Pushpakaran, SB Bayne, AA Ogunniyi 2013 19th IEEE Pulsed Power Conference (PPC), 1-6, 2013 | 19 | 2013 |
| High temperature unclamped inductive switching mode evaluation of SiC JFET BN Pushpakaran, M Hinojosa, SB Bayne, V Veliadis, D Urciuoli, ... IEEE electron device letters 34 (4), 526-528, 2013 | 18 | 2013 |
| Evaluation of SiC JFET performance during repetitive pulsed switching into an unclamped inductive load BN Pushpakaran, M Hinojosa, SB Bayne, V Veliadis, D Urciuoli, ... IEEE Transactions on Plasma Science 42 (10), 2968-2973, 2014 | 16 | 2014 |
| Single-pulse avalanche mode operation of 10-kV/10-A SiC MOSFET MD Kelley, BN Pushpakaran, AV Bilbao, JA Schrock, SB Bayne Microelectronics Reliability 81, 174-180, 2018 | 14 | 2018 |
| Physics-based simulation of 4H-SIC DMOSFET structure under inductive switching BN Pushpakaran, SB Bayne, AA Ogunniyi Journal of Computational Electronics 15, 191-199, 2016 | 14 | 2016 |
| Silicon carbide technology overview SB Bayne, BN Pushpakaran Journal of Electrical Engineering & Electronic Technology 1 (01), 2012 | 13 | 2012 |
| Modeling and Electrothermal Simulation of SiC Power Devices: Using Silvaco© ATLAS BN Pushpakaran, SB Bayne | 9 | 2019 |
| Electrothermal simulation-based comparison of 4H-SiC pin, Schottky, and JBS diodes under high current density pulsed operation BN Pushpakaran, SB Bayne, AA Ogunniyi IEEE Transactions on Plasma Science 45 (1), 68-75, 2016 | 7 | 2016 |
| Thermal analysis of 4H-SiC DMOSFET structure under resistive switching BN Pushpakaran, SB Bayne, AA Ogunniyi 2014 IEEE International Power Modulator and High Voltage Conference (IPMHVC …, 2014 | 6 | 2014 |
| Analysis of carrier lifetime effects on HV SIC PiN diodes at elevated pulsed switching conditions AA Ogunniyi, HK O'Brien, M Hinojosa, L Cheng, CJ Scozzie, ... 2015 IEEE Pulsed Power Conference (PPC), 1-6, 2015 | 5 | 2015 |
| Physics based electro-thermal transient simulation of 4H-SiC JBS diode using Silvaco ATLAS BN Pushpakaran, SB Bayne, AA Ogunniyi 2015 IEEE Pulsed Power Conference (PPC), 1-5, 2015 | 4 | 2015 |
| Silvaco-based evaluation of 10 kV 4H-SiC MOSFET as a solid-state switch in narrow-pulse application B Pushpakaran, S Bayne, A Ogunniyi 2017 IEEE 21st International Conference on Pulsed Power (PPC), 1-5, 2017 | 2 | 2017 |
| Silvaco-Based Electrothermal Simulation of 10 kV 4H-SiC PIN Diode Under Pulsed Condition B Pushpakaran, S Bayne, A Ogunniyi 2017 IEEE 21st International Conference on Pulsed Power (PPC), 1-6, 2017 | 1 | 2017 |
Stephen BayneProfessor of Electrical and Computer Engineering, Texas Tech University在 ttu.edu 的电子邮件经过验证
