New dual-material SG nanoscale MOSFET: analytical threshold-voltage model MJ Kumar, AA Orouji, H Dhakad IEEE transactions on Electron Devices 53 (4), 920-922, 2006 | 102 | 2006 |
Two-dimensional analytical threshold voltage model of nanoscale fully depleted SOI MOSFET with electrically induced S/D extensions MJ Kumar, AA Orouji IEEE Transactions on Electron Devices 52 (7), 1568-1575, 2005 | 77 | 2005 |
Towards high efficiency Cd-Free Sb2Se3 solar cells by the band alignment optimization I Gharibshahian, AA Orouji, S Sharbati Solar energy materials and solar cells 212, 110581, 2020 | 72 | 2020 |
A wideband and reconfigurable filtering slot antenna MM Fakharian, P Rezaei, AA Orouji, M Soltanpur IEEE Antennas and Wireless Propagation Letters 15, 1610-1613, 2016 | 72 | 2016 |
Nanoscale triple material double gate (TM-DG) MOSFET for improving short channel effects P Razavi, AA Orouji 2008 International conference on advances in electronics and micro …, 2008 | 64 | 2008 |
Leakage current reduction techniques in poly-Si TFTs for active matrix liquid crystal displays: A comprehensive study AA Orouji, MJ Kumar IEEE Transactions on device and materials reliability 6 (2), 315-325, 2006 | 62 | 2006 |
Design of all-optical XOR and XNOR logic gates based on Fano resonance in plasmonic ring resonators M Moradi, M Danaie, AA Orouji Optical and Quantum Electronics 51, 1-18, 2019 | 59 | 2019 |
Reconfigurable multiband extended U-slot antenna with switchable polarization for wireless applications M Fakharian, P Rezaei, A Orouji IEEE Antennas and Propagation Magazine 57 (2), 194-202, 2015 | 58 | 2015 |
A novel high-breakdown-voltage SOI MESFET by modified charge distribution A Aminbeidokhti, AA Orouji, S Rahmaninezhad, M Ghasemian IEEE transactions on electron devices 59 (5), 1255-1262, 2012 | 56 | 2012 |
Reconfigurable multi-band, graphene-based THz absorber: circuit model approach T Aghaee, AA Orouji Results in Physics 16, 102855, 2020 | 55 | 2020 |
Design and analysis of an optical full-adder based on nonlinear photonic crystal ring resonators M Moradi, M Danaie, AA Orouji Optik 172, 127-136, 2018 | 55 | 2018 |
A new partial SOI-LDMOSFET with a modified buried oxide layer for improving self-heating and breakdown voltage SEJ Mahabadi, AA Orouji, P Keshavarzi, HA Moghadam Semiconductor Science and Technology 26 (9), 095005, 2011 | 55 | 2011 |
A new partial-SOI LDMOSFET with modified electric field for breakdown voltage improvement AA Orouji, S Sharbati, M Fathipour IEEE Transactions on Device and Materials Reliability 9 (3), 449-453, 2009 | 55 | 2009 |
Designing of AlxGa1-xAs/CIGS tandem solar cell by analytical model S Sharbati, I Gharibshahian, AA Orouji Solar Energy 188, 1-9, 2019 | 52 | 2019 |
Farsi/Arabic text extraction from video images by corner detection M Moradi, S Mozaffari, AA Orouji 2010 6th Iranian conference on machine vision and image processing, 1-6, 2010 | 49 | 2010 |
Detailed simulation study of a dual material gate carbon nanotube field-effect transistor AA Orouji, Z Arefinia Physica E: Low-dimensional Systems and Nanostructures 41 (4), 552-557, 2009 | 49 | 2009 |
Investigation of the novel attributes of a carbon nanotube FET with high-κ gate dielectrics Z Arefinia, AA Orouji Physica E: Low-dimensional Systems and Nanostructures 40 (10), 3068-3071, 2008 | 49 | 2008 |
Partially cylindrical fin field-effect transistor: a novel device for nanoscale applications M Mehrad, AA Orouji IEEE Transactions on Device and Materials Reliability 10 (2), 271-275, 2010 | 48 | 2010 |
A novel 4H–SiC MESFET with modified channel depletion region for high power and high frequency applications A Aminbeidokhti, AA Orouji Physica E: Low-dimensional Systems and Nanostructures 44 (3), 708-713, 2011 | 47 | 2011 |
Dual material gate oxide stack symmetric double gate MOSFET: improving short channel effects of nanoscale double gate MOSFET P Razavi, AA Orouji 2008 11th international biennial baltic electronics conference, 83-86, 2008 | 46 | 2008 |