| Room-temperature ferroelectricity in MoTe2 down to the atomic monolayer limit S Yuan, X Luo, HL Chan, C Xiao, Y Dai, M Xie, J Hao Nature communications 10 (1), 1775, 2019 | 383 | 2019 |
| Elemental ferroelectricity and antiferroelectricity in Group‐V monolayer C Xiao, F Wang, SA Yang, Y Lu, Y Feng, S Zhang Advanced Functional Materials 28 (17), 1707383, 2018 | 183 | 2018 |
| Two-dimensional ferroelectricity and switchable spin-textures in ultra-thin elemental Te multilayers Y Wang, C Xiao, M Chen, C Hua, J Zou, C Wu, J Jiang, SA Yang, Y Lu, ... Materials Horizons 5 (3), 521-528, 2018 | 106 | 2018 |
| Enhanced photoelectrical response of thermodynamically epitaxial organic crystals at the two-dimensional limit M Cao, C Zhang, Z Cai, C Xiao, X Chen, K Yi, Y Yang, Y Lu, D Wei Nature Communications 10 (1), 756, 2019 | 82 | 2019 |
| Ferroelectric control of single-molecule magnetism in 2D limit X Wang, C Xiao, C Yang, M Chen, SA Yang, J Hu, Z Ren, H Pan, W Zhu, ... Science Bulletin 65 (15), 1252-1259, 2020 | 34 | 2020 |
| Investigations on molybdenum dinitride as a promising anode material for Na-ion batteries from first-principle calculations Z Lan, M Chen, X Xu, C Xiao, F Wang, Y Wang, Y Lu, Y Jiang, J Jiang Journal of Alloys and Compounds 701, 875-881, 2017 | 21 | 2017 |
| Coexistence of ferroelectricity and ferromagnetism in one-dimensional SbN and BiN nanowires C Yang, M Chen, S Li, X Zhang, C Hua, H Bai, C Xiao, SA Yang, P He, ... ACS Applied Materials & Interfaces 13 (11), 13517-13523, 2021 | 19 | 2021 |
| Realization of a new topological crystalline insulator and Lifshitz transition in pbte S Ma, C Guo, C Xiao, F Wu, M Smidman, Y Lu, H Yuan, H Wu Advanced Functional Materials 28 (37), 1803188, 2018 | 15 | 2018 |
| Electronic structures of ultra-thin tellurium nanoribbons Z Liang, Y Wang, C Hua, C Xiao, M Chen, Z Jiang, R Tai, Y Lu, F Song Nanoscale 11 (30), 14134-14140, 2019 | 13 | 2019 |
| Spontaneous symmetry lowering of Si (001) towards two-dimensional ferro/antiferroelectric behavior C Xiao, X Wang, X Pi, SA Yang, Y Feng, Y Lu, S Zhang Physical Review Materials 3 (4), 044410, 2019 | 10 | 2019 |
| Layer-dependent semiconductor-metal transition of SnO/Si (001) heterostructure and device application C Xiao, F Wang, Y Wang, SA Yang, J Jiang, M Yang, Y Lu, S Wang, ... Scientific Reports 7 (1), 2570, 2017 | 6 | 2017 |
| Origin and electronic behavior of improper ferroelectricity in AB2 (A= Cr, Mo, W; B= S, Se, Te) transition metal dichalcogenides C Xiao, ZA Xu, X Luo, Y Lu arXiv preprint arXiv:2001.03164, 2020 | 1 | 2020 |
| Ferroelectricity and Antiferroelectricity in Elemental Group-V Monolayer Materials C Xiao, F Wang, SA Yang, Y Lu arXiv preprint arXiv:1706.05629, 2017 | | 2017 |
