| Growth and applications of GeSn-related group-IV semiconductor materials S Zaima, O Nakatsuka, N Taoka, M Kurosawa, W Takeuchi, M Sakashita Science and technology of advanced materials 16 (4), 043502, 2015 | 200 | 2015 |
| Orientation-controlled Si thin films on insulating substrates by Al-induced crystallization combined with interfacial-oxide layer modulation M Kurosawa, N Kawabata, T Sadoh, M Miyao Applied Physics Letters 95 (13), 2009 | 155 | 2009 |
| Germanene epitaxial growth by segregation through Ag (111) thin films on Ge (111) J Yuhara, H Shimazu, K Ito, A Ohta, M Araidai, M Kurosawa, M Nakatake, ... ACS nano 12 (11), 11632-11637, 2018 | 118 | 2018 |
| Highly (111)-oriented Ge thin films on insulators formed by Al-induced crystallization K Toko, M Kurosawa, N Saitoh, N Yoshizawa, N Usami, M Miyao, ... Applied physics letters 101 (7), 2012 | 111 | 2012 |
| Nucleation-controlled gold-induced-crystallization for selective formation of Ge (100) and (111) on insulator at low-temperature (∼ 250° C) JH Park, T Suzuki, M Kurosawa, M Miyao, T Sadoh Applied Physics Letters 103 (8), 2013 | 86 | 2013 |
| High hole mobility tin-doped polycrystalline germanium layers formed on insulating substrates by low-temperature solid-phase crystallization W Takeuchi, N Taoka, M Kurosawa, M Sakashita, O Nakatsuka, S Zaima Applied Physics Letters 107 (2), 2015 | 80 | 2015 |
| Near-infrared light absorption by polycrystalline SiSn alloys grown on insulating layers M Kurosawa, M Kato, T Yamaha, N Taoka, O Nakatsuka, S Zaima Applied Physics Letters 106 (17), 2015 | 60 | 2015 |
| Enhanced interfacial-nucleation in Al-induced crystallization for (111) oriented Si1–xGex (0≤ x≤ 1) films on insulating substrates M Kurosawa, N Kawabata, T Sadoh, M Miyao ECS Journal of Solid State Science and Technology 1 (3), P144, 2012 | 53 | 2012 |
| Large grain growth of Ge-rich Ge1− xSnx (x≈ 0.02) on insulating surfaces using pulsed laser annealing in flowing water M Kurosawa, N Taoka, H Ikenoue, O Nakatsuka, S Zaima Applied Physics Letters 104 (6), 2014 | 47 | 2014 |
| Interfacial-Oxide Layer Controlled Al-Induced Crystallization of Si1-xGex (x: 0–1) on Insulating Substrate M Kurosawa, Y Tsumura, T Sadoh, M Miyao Japanese journal of applied physics 48 (3S2), 03B002, 2009 | 44 | 2009 |
| Comprehensive study of Al-induced layer-exchange growth for orientation-controlled Si crystals on SiO2 substrates M Kurosawa, T Sadoh, M Miyao Journal of Applied Physics 116 (17), 2014 | 42 | 2014 |
| Single-crystalline laterally graded GeSn on insulator structures by segregation controlled rapid-melting growth M Kurosawa, Y Tojo, R Matsumura, T Sadoh, M Miyao Applied Physics Letters 101 (9), 2012 | 42 | 2012 |
| Al-Induced oriented-crystallization of Si films on quartz and its application to epitaxial template for Ge growth M Kurosawa, K Toko, N Kawabata, T Sadoh, M Miyao Solid-state electronics 60 (1), 7-12, 2011 | 40 | 2011 |
| Au-induced low-temperature (∼ 250° C) crystallization of Si on insulator through layer-exchange process JH Park, M Kurosawa, N Kawabata, M Miyao, T Sadoh Electrochemical and Solid-State Letters 14 (6), H232, 2011 | 40 | 2011 |
| Realizing High Thermoelectric Performance at Ambient Temperature by Ternary Alloying in Polycrystalline Si1-x-yGexSny Thin Films with Boron Ion Implantation Y Peng, L Miao, J Gao, C Liu, M Kurosawa, O Nakatsuka, S Zaima Scientific reports 9 (1), 14342, 2019 | 38 | 2019 |
| Low-temperature (∼ 250° C) Cu-induced lateral crystallization of amorphous Ge on insulator T Sadoh, M Kurosawa, T Hagihara, K Toko, M Miyao Electrochemical and Solid-State Letters 14 (7), H274, 2011 | 37 | 2011 |
| Operation of inverter and ring oscillator of ultrathin-body poly-Ge CMOS Y Kamata, M Koike, E Kurosawa, M Kurosawa, H Ota, O Nakatsuka, ... Applied Physics Express 7 (12), 121302, 2014 | 36 | 2014 |
| Growth-rate-dependent laterally graded SiGe profiles on insulator by cooling-rate controlled rapid-melting-growth R Matsumura, Y Tojo, M Kurosawa, T Sadoh, I Mizushima, M Miyao Applied Physics Letters 101 (24), 2012 | 36 | 2012 |
| Liquid-Sn-driven lateral growth of poly-GeSn on insulator assisted by surface oxide layer M Kurosawa, N Taoka, M Sakashita, O Nakatsuka, M Miyao, S Zaima Applied Physics Letters 103 (10), 2013 | 35 | 2013 |
| Surface-segregated Si and Ge ultrathin films formed by Ag-induced layer exchange process M Kurosawa, A Ohta, M Araidai, S Zaima Japanese Journal of Applied Physics 55 (8S1), 08NB07, 2016 | 34 | 2016 |
Osamu Nakatsuka (中塚 理)Graduate School of Engineering, Nagoya University在 alice.xtal.nagoya-u.ac.jp 的电子邮件经过验证
