| Microscopic calculation of the electron-phonon interaction in quantum wells H Rücker, E Molinari, P Lugli Physical Review B 45 (12), 6747, 1992 | 325 | 1992 |
| SiGe HBT technology with fT/fmax of 300GHz/500GHz and 2.0 ps CML gate delay B Heinemann, R Barth, D Bolze, J Drews, GG Fischer, A Fox, O Fursenko, ... 2010 International Electron Devices Meeting, 30.5. 1-30.5. 4, 2010 | 306 | 2010 |
| Half-terahertz sige bicmos technology H Rücker, B Heinemann, A Fox 2012 IEEE 12th Topical Meeting on Silicon Monolithic Integrated Circuits in …, 2012 | 256 | 2012 |
| SiGe HBT with fx/fmax of 505 GHz/720 GHz B Heinemann, H Rücker, R Barth, F Bärwolf, J Drews, GG Fischer, A Fox, ... 2016 IEEE International Electron Devices Meeting (IEDM), 3.1. 1-3.1. 4, 2016 | 238 | 2016 |
| A 0.13SiGe BiCMOS Technology Featuring f/fof 240/330 GHz and Gate Delays Below 3 ps H Rucker, B Heinemann, W Winkler, R Barth, J Borngraber, J Drews, ... IEEE Journal of Solid-State Circuits 45 (9), 1678-1686, 2010 | 224 | 2010 |
| Electron-phonon interaction in quasi-two-dimensional systems H Rücker, E Molinari, P Lugli Physical Review B 44 (7), 3463, 1991 | 218 | 1991 |
| Anharmonic Keating model for group-IV semiconductors with application to the lattice dynamics in alloys of Si, Ge, and C H Rücker, M Methfessel Physical Review B 52 (15), 11059, 1995 | 213 | 1995 |
| Suppressed diffusion of boron and carbon in carbon-rich silicon H Rücker, B Heinemann, W Röpke, R Kurps, D Krüger, G Lippert, ... Applied Physics Letters 73 (12), 1682-1684, 1998 | 182 | 1998 |
| SiGe HBT and BiCMOS process integration optimization within the DOTSEVEN project J Böck, K Aufinger, S Boguth, C Dahl, H Knapp, W Liebl, D Manger, ... 2015 IEEE Bipolar/BiCMOS Circuits and Technology Meeting-BCTM, 121-124, 2015 | 167 | 2015 |
| Strain-stabilized highly concentrated pseudomorphic Si 1− x C x layers in Si H Rücker, M Methfessel, E Bugiel, HJ Osten Physical review letters 72 (22), 3578, 1994 | 146 | 1994 |
| Growth and properties of strained Si1-x-yGexCy layers SC Jain, HJ Osten, B Dietrich, H Rucker Semiconductor science and technology 10 (10), 1289, 1995 | 131 | 1995 |
| A 0.53 THz reconfigurable source module with up to 1 mW radiated power for diffuse illumination in terahertz imaging applications UR Pfeiffer, Y Zhao, J Grzyb, R Al Hadi, N Sarmah, W Förster, H Rücker, ... IEEE Journal of Solid-State Circuits 49 (12), 2938-2950, 2014 | 128 | 2014 |
| Novel collector design for high-speed SiGe: C HBTs B Heinemann, H Rucker, R Barth, J Bauer, D Bolze, E Bugiel, J Drews, ... Digest. International Electron Devices Meeting,, 775-778, 2002 | 127 | 2002 |
| High-performance BiCMOS technologies without epitaxially-buried subcollectors and deep trenches B Heinemann, R Barth, D Knoll, H Rücker, B Tillack, W Winkler Semiconductor Science and Technology 22 (1), S153, 2006 | 115 | 2006 |
| Si/SiGe: C and InP/GaAsSb heterojunction bipolar transistors for THz applications P Chevalier, M Schröter, CR Bolognesi, V d'Alessandro, M Alexandrova, ... Proceedings of the IEEE 105 (6), 1035-1050, 2017 | 114 | 2017 |
| SiGe BiCMOS technology with 3.0 ps gate delay H Rucker, B Heinemann, R Barth, J Bauer, K Blum, D Bolze, J Drews, ... 2007 IEEE International Electron Devices Meeting, 651-654, 2007 | 102 | 2007 |
| SiGe BiCMOS current status and future trends in Europe P Chevalier, W Liebl, H Rücker, A Gauthier, D Manger, B Heinemann, ... 2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and …, 2018 | 88 | 2018 |
| 14.5 A 0.53 THz reconfigurable source array with up to 1mW radiated power for terahertz imaging applications in 0.13 μm SiGe BiCMOS UR Pfeiffer, Y Zhao, J Grzyb, R Al Hadi, N Sarmah, W Förster, H Rücker, ... 2014 IEEE International Solid-State Circuits Conference Digest of Technical …, 2014 | 88 | 2014 |
| Lattice distortion in a strain-compensated Si 1− x− y Ge x C y layer on silicon B Dietrich, HJ Osten, H Rücker, M Methfessel, P Zaumseil Physical Review B 49 (24), 17185, 1994 | 83 | 1994 |
| Effects of guard-ring structures on the performance of silicon avalanche photodetectors fabricated with standard CMOS technology MJ Lee, H Rucker, WY Choi IEEE Electron Device Letters 33 (1), 80-82, 2011 | 80 | 2011 |
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