| High-mobility germanium-tin (GeSn) p-channel MOSFETs featuring metallic source/drain and sub-370 C process modules G Han, S Su, C Zhan, Q Zhou, Y Yang, L Wang, P Guo, W Wei, CP Wong, ... 2011 International Electron Devices Meeting, 16.7. 1-16.7. 3, 2011 | 107 | 2011 |
| Tin surface segregation, desorption, and island formation during post-growth annealing of strained epitaxial Ge1− xSnx layer on Ge (0 0 1) substrate W Wang, L Li, Q Zhou, J Pan, Z Zhang, ES Tok, YC Yeo Applied surface science 321, 240-244, 2014 | 103 | 2014 |
| Critical thickness for strain relaxation of Ge1− xSnx (x≤ 0.17) grown by molecular beam epitaxy on Ge (001) W Wang, Q Zhou, Y Dong, ES Tok, YC Yeo Applied Physics Letters 106 (23), 2015 | 91 | 2015 |
| Suppression of dark current in germanium-tin on silicon pin photodiode by a silicon surface passivation technique Y Dong, W Wang, D Lei, X Gong, Q Zhou, SY Lee, WK Loke, SF Yoon, ... Optics express 23 (14), 18611-18619, 2015 | 88 | 2015 |
| Silicon-based tunneling field-effect transistor with elevated germanium source formed on (110) silicon substrate G Han, P Guo, Y Yang, C Zhan, Q Zhou, YC Yeo Applied Physics Letters 98 (15), 2011 | 82 | 2011 |
| Germanium-tin on Si avalanche photodiode: device design and technology demonstration Y Dong, W Wang, X Xu, X Gong, D Lei, Q Zhou, Z Xu, WK Loke, SF Yoon, ... IEEE Transactions on Electron Devices 62 (1), 128-135, 2014 | 64 | 2014 |
| In0. 7Ga0. 3As channel n-MOSFET with self-aligned Ni–InGaAs source and drain X Zhang, H Guo, X Gong, Q Zhou, YR Lin, HY Lin, CH Ko, CH Wann, ... Electrochemical and Solid-State Letters 14 (2), H60, 2010 | 63 | 2010 |
| Ge0. 97Sn0. 03 p-channel metal-oxide-semiconductor field-effect transistors: Impact of Si surface passivation layer thickness and post metal annealing P Guo, G Han, X Gong, B Liu, Y Yang, W Wang, Q Zhou, J Pan, Z Zhang, ... Journal of Applied Physics 114 (4), 2013 | 55 | 2013 |
| Dopant Segregation and Nickel Stanogermanide Contact Formation onSource/Drain G Han, S Su, Q Zhou, P Guo, Y Yang, C Zhan, L Wang, W Wang, Q Wang, ... IEEE electron device letters 33 (5), 634-636, 2012 | 51 | 2012 |
| A self-aligned Ni-InGaAs contact technology for InGaAs channel n-MOSFETs X Zhang, HX Guo, X Gong, Q Zhou, YC Yeo Journal of the Electrochemical Society 159 (5), H511, 2012 | 48 | 2012 |
| Above-bandgap optical properties of biaxially strained GeSn alloys grown by molecular beam epitaxy V Richard D’Costa, W Wang, Q Zhou, E Soon Tok, YC Yeo Applied Physics Letters 104 (2), 2014 | 40 | 2014 |
| Thermally stable multi-phase nickel-platinum stanogermanide contacts for germanium-tin channel MOSFETs L Wang, G Han, S Su, Q Zhou, Y Yang, P Guo, W Wang, Y Tong, PSY Lim, ... Electrochemical and Solid-State Letters 15 (6), H179, 2012 | 34 | 2012 |
| Reduction of off-state leakage current in In0. 7Ga0. 3As channel n-MOSFETs with self-aligned Ni-InGaAs contact metallization X Zhang, H Guo, HY Lin, X Gong, Q Zhou, YR Lin, CH Ko, CH Wann, ... Electrochemical and Solid-State Letters 14 (5), H212, 2011 | 33 | 2011 |
| Crystal structure and epitaxial relationship of Ni4InGaAs2 films formed on InGaAs by annealing I Ivana, Y Lim Foo, X Zhang, Q Zhou, J Pan, E Kong, MH Samuel Owen, ... Journal of Vacuum Science & Technology B 31 (1), 2013 | 29 | 2013 |
| Compositional dependence of optical critical point parameters in pseudomorphic GeSn alloys VR D'Costa, W Wang, Q Zhou, TK Chan, T Osipowicz, ES Tok, YC Yeo Journal of Applied Physics 116 (5), 2014 | 27 | 2014 |
| High-Performance Germanium-Gate MuGFET With Schottky-Barrier Nickel Germanide Source/Drain and Low-Temperature Disilane-Passivated Gate Stack B Liu, X Gong, G Han, PSY Lim, Y Tong, Q Zhou, Y Yang, N Daval, ... IEEE electron device letters 33 (10), 1336-1338, 2012 | 26* | 2012 |
| Post-growth annealing of germanium-tin alloys using pulsed excimer laser L Wang, W Wang, Q Zhou, J Pan, Z Zhang, ES Tok, YC Yeo Journal of Applied Physics 118 (2), 2015 | 23 | 2015 |
| Uniaxially strained germanium-tin (GeSn) gate-all-around nanowire PFETs enabled by a novel top-down nanowire formation technology X Gong, G Han, S Su, R Cheng, P Guo, F Bai, Y Yang, Q Zhou, B Liu, ... 2013 Symposium on VLSI Technology, T34-T35, 2013 | 23 | 2013 |
| Contact resistance reduction for strained N-MOSFETs with silicon-carbon source/drain utilizing aluminum ion implant and aluminum profile engineering Q Zhou, SM Koh, T Thanigaivelan, T Henry, YC Yeo IEEE transactions on electron devices 60 (4), 1310-1317, 2013 | 23 | 2013 |
| Selective wet etching process for Ni-InGaAs contact formation in InGaAs N-MOSFETs with self-aligned source and drain S Subramanian, Q Zhou, X Zhang, M Balakrishnan, YC Yeo Journal of The Electrochemical Society 159 (1), H16, 2011 | 18 | 2011 |
Genquan HanXidian University在 xidian.edu.cn 的电子邮件经过验证
Genquan HanXidian University在 xidian.edu.cn 的电子邮件经过验证