Passivation Effect on ZnO Films by SF6 Plasma Treatment Y Xu, B Bo, X Gao, Z Qiao Crystals 9 (5), 236, 2019 | 29 | 2019 |
Mid-Infrared, Ultra-Broadband, Low-Loss, Compact Arbitrary Power Splitter Based on Adiabatic Mode Evolution JXB Sia, W Wang, X Guo, J Zhou, Z Zhang, MS Rouifed, X Li, ZL Qiao, ... IEEE Photonics Journal, 2019 | 27 | 2019 |
Modal gain characteristics of a 2 μm InGaSb/AlGaAsSb passively mode-locked quantum well laser X Li, H Wang, Z Qiao, X Guo, GI Ng, Y Zhang, Z Niu, C Tong, C Liu Applied Physics Letters 111 (25), 2017 | 24 | 2017 |
Magnetic–plasmonic Ni@ Au core–shell nanoparticle arrays and their SERS properties L Wang, Z Wang, L Li, J Zhang, J Liu, J Hu, X Wu, Z Weng, X Chu, J Li, ... RSC advances 10 (5), 2661-2669, 2020 | 23 | 2020 |
Sub-kHz linewidth, hybrid III-V/silicon wavelength-tunable laser diode operating at the application-rich 1647-1690 nm JXB Sia, X Li, W Wang, Z Qiao, X Guo, J Zhou, CG Littlejohns, C Liu, ... Optics Express 28 (17), 25215-25224, 2020 | 22 | 2020 |
Design and analysis of 2-μm InGaSb/GaSb quantum well Lasers integrated onto Silicon-on-Insulator (SOI) waveguide circuits through an Al2O3 bonding layer X Li, H Wang, Z Qiao, Y Zhang, Z Niu, C Tong, C Liu IEEE Journal of Selected Topics in Quantum Electronics 22 (6), 16-22, 2016 | 21 | 2016 |
Compact silicon photonic hybrid ring external cavity (SHREC)/InGaSb-AlGaAsSb wavelength-tunable laser diode operating from 1881-1947 nm JXB Sia, W Wang, Z Qiao, X Li, X Guo, J Zhou, CG Littlejohns, Z Zhang, ... Optics express 28 (4), 5134-5146, 2020 | 20 | 2020 |
Wafer-scale demonstration of low-loss (∼ 0.43 dB/cm), high-bandwidth (> 38 GHz), silicon photonics platform operating at the C-band JXB Sia, X Li, J Wang, W Wang, Z Qiao, X Guo, CW Lee, A Sasidharan, ... IEEE Photonics Journal 14 (3), 1-9, 2022 | 18 | 2022 |
多线阵半导体激光器的单光纤耦合输出 高欣, 薄报学, 乔忠良, 芦鹏, 王玉霞, 李辉, 曲轶 光子学报 39 (007), 1229-1234, 2010 | 17 | 2010 |
Laser Sensing and Vision Sensing Smart Blind Cane: A Review C Mai, D Xie, L Zeng, Z Li, Z Li, Z Qiao, Y Qu, G Liu, L Li Sensors 23 (2), 869, 2023 | 14 | 2023 |
1× N (N= 2, 8) silicon selector switch for prospective technologies at the 2 μm waveband JXB Sia, X Li, Z Qiao, X Guo, J Zhou, CG Littlejohns, C Liu, GT Reed, ... IEEE Photonics Technology Letters 32 (18), 1127-1130, 2020 | 14 | 2020 |
High temperature characteristics of a 2 μm InGaSb/AlGaAsSb passively mode-locked quantum well laser X Li, H Wang, Z Qiao, X Guo, W Wang, JXB Sia, GI Ng, Y Zhang, Z Niu, ... Applied Physics Letters 114 (22), 2019 | 14 | 2019 |
Investigation of regime switching from mode locking to Q-switching in a 2 µm InGaSb/AlGaAsSb quantum well laser X Li, H Wang, Z Qiao, X Guo, W Wang, GI Ng, Y Zhang, Y Xu, Z Niu, ... Optics Express 26 (7), 8289-8295, 2018 | 14 | 2018 |
Structural, Optical and electrical properties of hydrogen-doped amorphous GaAs thin films Y Yan-Ping, L Chun-Ling, Q Zhong-Liang, L Mei, G Xin, B Bao-Xue Chinese Physics Letters 25 (3), 1071, 2008 | 14 | 2008 |
Phase noise reduction of a 2 µm passively mode-locked laser through hybrid III-V/silicon integration X Li, JXB Sia, W Wang, Z Qiao, X Guo, GI Ng, Y Zhang, Z Niu, C Tong, ... Optica 8 (6), 855-860, 2021 | 13 | 2021 |
Large energy band-gap tuning of 980 nm InGaAs/InGaAsP quantum well structure via quantum well intermixing Q Zhongliang, T Xiaohong, LEK Kenneth, LP Huei, B BaoXue Solid-state electronics 79, 281-284, 2013 | 13 | 2013 |
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High-performance 1.06-µm InGaAs/GaAs double-quantum-well semiconductor lasers with asymmetric heterostructure layers Q Zhongliang, X Li, H Wang, T Li, X Gao, Y Qu, B Bo, C Liu Semiconductor Science and Technology, 2019 | 12 | 2019 |
Monolithic fabrication of InGaAs/GaAs/AlGaAs multiple wavelength quantum well laser diodes via impurity-free vacancy disordering quantum well intermixing Z Qiao, X Tang, X Li, B Bo, X Gao, Y Qu, C Liu, H Wang IEEE Journal of the Electron Devices Society 5 (2), 122-127, 2017 | 12 | 2017 |
InGaAs/GaAsP/GaInP quantum well lasers with window structure fabricated by impurity free vacancy disordering L Zhou, X Gao, L Xu, Z Qiao, B Bo Solid-state electronics 89, 81-84, 2013 | 12 | 2013 |