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Chengliang Xia
Chengliang Xia
在 connect.hku.hk 的电子邮件经过验证
标题
引用次数
引用次数
年份
Enhanced thermoelectric performance of GeTe through in situ microdomain and Ge-vacancy control
KS Bayikadi, R Sankar, CT Wu, C Xia, Y Chen, LC Chen, KH Chen, ...
Journal of Materials Chemistry A 7 (25), 15181-15189, 2019
702019
Extraordinary thermoelectric performance, thermal stability and mechanical properties of n-type Mg3Sb1. 5Bi0. 5 through multi-dopants at interstitial site
F Jiang, T Feng, Y Zhu, Z Han, R Shu, C Chen, Y Zhang, C Xia, X Wu, ...
Materials Today Physics 27, 100835, 2022
322022
Achieving high-performance n-type PbTe via synergistically optimizing effective mass and carrier concentration and suppressing lattice thermal conductivity
HT Liu, Q Sun, Y Zhong, CL Xia, Y Chen, ZG Chen, R Ang
Chemical Engineering Journal 428, 132601, 2022
322022
Enhanced thermoelectric performance of n-type Nb-doped PbTe by compensating resonant level and inducing atomic disorder
HT Liu, Q Sun, Y Zhong, CL Xia, Y Chen, XL Shi, ZG Chen, R Ang
Materials Today Physics 24, 100677, 2022
272022
Integrating band engineering with point defect scattering for high thermoelectric performance in Bi2Si2Te6
C Chen, D Shen, C Xia, Z Zhang, W Wang, Q Zhang, Y Chen
Chemical Engineering Journal 441, 135968, 2022
252022
Tuning the Carrier Scattering Mechanism by Rare-Earth Element Doping for High Average zT in Mg3Sb2-Based Compounds
K Liu, C Chen, X Li, J Jia, C Xia, J Mao, Q Huang, J Sui, F Cao, X Liu, ...
ACS Applied Materials & Interfaces 14 (5), 7022-7029, 2022
222022
Structure, magnetic and thermoelectric properties of high entropy selenides Bi0. 6Sb0. 6In0. 4Cr0. 4Se3
F Jiang, T Feng, Y Zhu, C Xia, C Liu, Y Chen, W Liu
Mater. Lab 1 (4), 220045, 2022
202022
Coexistence of polar displacements and conduction in doped ferroelectrics: An ab initio comparative study
C Xia, Y Chen, H Chen
Physical Review Materials 3 (5), 054405, 2019
202019
Role of crystal-field-splitting and longe-range-hoppings on superconducting pairing symmetry of LaNiO
H Liu, C Xia, S Zhou, H Chen
arXiv preprint arXiv:2311.07316, 2023
192023
Dynamical structural instability and its implications for the physical properties of infinite-layer nickelates
C Xia, J Wu, Y Chen, H Chen
Physical Review B 105 (11), 115134, 2022
182022
Effect of group-3 elements doping on promotion of in-plane Seebeck coefficient of n-type Mg3Sb2
C Xia, J Cui, Y Chen
Journal of Materiomics 6 (2), 274-279, 2020
172020
Strain and doping in two-dimensional SnTe nanosheets: implications for thermoelectric conversion
F Xiong, HB Tan, C Xia, Y Chen
ACS Applied Nano Materials 3 (1), 114-119, 2019
152019
Raising the solubility of Gd yields superior thermoelectric performance in n-type PbSe
Q Deng, Y Zhong, C Zhao, F Zhang, CL Xia, Y Chen, R Ang
Journal of Materials Chemistry A 10 (38), 20386-20395, 2022
142022
Electronic Structure of Superconducting Infinite-Layer Lanthanum Nickelates
W Sun, Z Jiang, C Xia, B Hao, Y Li, S Yan, M Wang, H Liu, J Ding, J Liu, ...
arXiv preprint arXiv:2403.07344, 2024
122024
Pressure effects on the electrical transport and anharmonic lattice dynamics of r-GeTe: A first-principles study
J Cui, S Li, C Xia, Y Chen, J He
Journal of Materiomics 7 (6), 1190-1197, 2021
112021
Boosting room-temperature thermoelectric performance of Mg3Sb1. 5Bi0. 5 material through breaking the contradiction between carrier concentration and carrier mobility
F Jiang, X Wu, Y Zhu, C Xia, Z Han, H Yu, C Chen, T Feng, J Mao, Y Chen, ...
Acta Materialia 265, 119636, 2024
102024
Thermoelectric properties of p-type polycrystalline Bi0. 8Sb0. 8In0. 4Se3
F Jiang, C Xia, Y Zhu, Z Han, C Liu, J Xia, Y Chen, W Liu
Applied Physics Letters 118 (19), 2021
82021
Modulation of Band Alignment and Electron–Phonon Scattering in Mg3Sb2 via Pressure
C Xia, J Cui, Y Chen
ACS Applied Electronic Materials 2 (9), 2745-2749, 2020
82020
Pressure‐Induced Re‐Entrant Superconductivity in Transition Metal Dichalcogenide TiSe2
W Xia, J Wu, C Xia, Z Li, J Yuan, C An, X Liu, X Wang, N Yu, Z Zou, G Liu, ...
Small 20 (45), 2402749, 2024
62024
Functionally separated electronic band engineering via multi-element doping plus high-density defects advances board-temperature-range thermoelectric performance in GeTe
J Zhu, X Tan, D Pan, Y Luo, R Li, X Rao, R Cheng, C Xia, Y Chen, Q Sun, ...
Chemical Engineering Journal 480, 148135, 2024
62024
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