| 1230 V β-Ga2O3 trench Schottky barrier diodes with an ultra-low leakage current of< 1 μA/cm2 W Li, Z Hu, K Nomoto, Z Zhang, JY Hsu, QT Thieu, K Sasaki, A Kuramata, ... Applied Physics Letters 113 (20), 2018 | 175* | 2018 |
| Breakdown mechanism in 1 kA/cm2 and 960 V E-mode β-Ga2O3 vertical transistors Z Hu, K Nomoto, W Li, Z Zhang, N Tanen, QT Thieu, K Sasaki, A Kuramata, ... Applied Physics Letters 113 (12), 2018 | 167 | 2018 |
| 2.44 kV Ga2O3 vertical trench Schottky barrier diodes with very low reverse leakage current W Li, Z Hu, K Nomoto, R Jinno, Z Zhang, TQ Tu, K Sasaki, A Kuramata, ... 2018 IEEE International Electron Devices Meeting (IEDM), 8.5. 1-8.5. 4, 2018 | 108 | 2018 |
| The new nitrides: Layered, ferroelectric, magnetic, metallic and superconducting nitrides to boost the GaN photonics and electronics eco-system D Jena, R Page, J Casamento, P Dang, J Singhal, Z Zhang, J Wright, ... Japanese Journal of Applied Physics 58 (SC), SC0801, 2019 | 89 | 2019 |
| 2.44 kV Ga W Li, Z Hu, K Nomoto, R Jinno, Z Zhang, TQ Tu IEDM Tech. Dig, 8.5, 2018 | 39 | 2018 |
| Complex random telegraph noise (RTN): What do we understand? R Wang, S Guo, Z Zhang, J Zou, D Mao, R Huang 2018 IEEE International Symposium on the Physical and Failure Analysis of …, 2018 | 31 | 2018 |
| New insights into the amplitude of random telegraph noise in nanoscale MOS devices Z Zhang, S Guo, X Jiang, R Wang, Z Zhang, P Hao, Y Wang, R Huang 2017 IEEE International Reliability Physics Symposium (IRPS), 3C-3.1-3C-3.5, 2017 | 24 | 2017 |
| Polarization-induced 2D hole gases in pseudomorphic undoped GaN/AlN heterostructures on single-crystal AlN substrates Z Zhang, J Encomendero, R Chaudhuri, Y Cho, V Protasenko, K Nomoto, ... Applied Physics Letters 119 (16), 2021 | 22 | 2021 |
| New approach for understanding “random device physics” from channel percolation perspectives: Statistical simulations, key factors and experimental results Z Zhang, Z Zhang, R Wang, X Jiang, S Guo, Y Wang, X Wang, B Cheng, ... 2016 IEEE International Electron Devices Meeting (IEDM), 7.2. 1-7.2. 4, 2016 | 20 | 2016 |
| N-polar GaN/AlGaN/AlN high electron mobility transistors on single-crystal bulk AlN substrates E Kim, Z Zhang, J Encomendero, J Singhal, K Nomoto, A Hickman, ... Applied Physics Letters 122 (9), 2023 | 16 | 2023 |
| Investigation on the amplitude distribution of random telegraph noise (RTN) in nanoscale MOS devices Z Zhang, S Guo, X Jiang, R Wang, R Huang, J Zou 2016 IEEE International Nanoelectronics Conference (INEC), 1-2, 2016 | 14 | 2016 |
| Molecular beam homoepitaxy of N-polar AlN: Enabling role of aluminum-assisted surface cleaning Z Zhang, Y Hayashi, T Tohei, A Sakai, V Protasenko, J Singhal, H Miyake, ... Science Advances 8 (36), eabo6408, 2022 | 13 | 2022 |
| Magnetic properties of MBE grown Mn4N on MgO, SiC, GaN and Al2O3 substrates Z Zhang, Y Cho, J Singhal, X Li, P Dang, H Lee, J Casamento, Y Tang, ... AIP Advances 10 (1), 2020 | 13 | 2020 |
| Spin–orbit torque field-effect transistor (SOTFET): Proposal for a magnetoelectric memory X Li, J Casamento, P Dang, Z Zhang, O Afuye, AB Mei, AB Apsel, ... Applied Physics Letters 116 (24), 2020 | 12 | 2020 |
| Very High Density (>1014 cm−2) Polarization‐Induced 2D Hole Gases Observed in Undoped Pseudomorphic InGaN/AlN Heterostructures R Chaudhuri, Z Zhang, HG Xing, D Jena Advanced Electronic Materials 8 (5), 2101120, 2022 | 11 | 2022 |
| Molecular beam homoepitaxy of N-polar AlN on bulk AlN substrates J Singhal, J Encomendero, Y Cho, L van Deurzen, Z Zhang, K Nomoto, ... AIP Advances 12 (9), 2022 | 10 | 2022 |
| High-density polarization-induced 2D electron gases in N-polar pseudomorphic undoped GaN/Al0. 85Ga0. 15N heterostructures on single-crystal AlN substrates Z Zhang, J Encomendero, E Kim, J Singhal, YJ Cho, K Nomoto, M Toita, ... Applied Physics Letters 121 (8), 2022 | 7 | 2022 |
| Investigation on the amplitude coupling effect of random telegraph noise (RTN) in nanoscale FinFETs S Guo, Z Lin, R Wang, Z Zhang, Z Zhang, Y Wang, R Huang 2018 IEEE International Reliability Physics Symposium (IRPS), P-TX. 6-1-P-TX …, 2018 | 7 | 2018 |
| Comparative study on RTN amplitude in planar and FinFET devices Z Zhang, Z Zhang, S Guo, R Wang, X Wang, B Cheng, A Asenov, ... 2017 IEEE Electron Devices Technology and Manufacturing Conference (EDTM …, 2017 | 6 | 2017 |
| Distributed polarization-doped GaN p–n diodes with near-unity ideality factor and avalanche breakdown voltage of 1.25 kV K Nomoto, W Li, B Song, Z Hu, M Zhu, M Qi, V Protasenko, Z Zhang, ... Applied Physics Letters 120 (12), 2022 | 5 | 2022 |
