| Realization of high-luminous-efficiency InGaN light-emitting diodes in the “green gap” range Y Jiang, Y Li, Y Li, Z Deng, T Lu, Z Ma, P Zuo, L Dai, L Wang, H Jia, ... Scientific reports 5 (1), 1-7, 2015 | 146 | 2015 |
| Investigation of temperature-dependent photoluminescence in multi-quantum wells Y Fang, L Wang, Q Sun, T Lu, Z Deng, Z Ma, Y Jiang, H Jia, W Wang, ... Scientific reports 5 (1), 1-7, 2015 | 95 | 2015 |
| A novel wavelength-adjusting method in InGaN-based light-emitting diodes Z Deng, Y Jiang, Z Ma, W Wang, H Jia, J Zhou, H Chen Scientific reports 3 (1), 3389, 2013 | 67* | 2013 |
| Electrically transduced gas sensors based on semiconducting metal oxide nanowires Y Wang, L Duan, Z Deng, J Liao Sensors 20 (23), 6781, 2020 | 43 | 2020 |
| Hybrid nano-scale Au with ITO structure for a high-performance near-infrared silicon-based photodetector with ultralow dark current X Li, Z Deng, J Li, Y Li, L Guo, Y Jiang, Z Ma, L Wang, C Du, Y Wang, ... Photonics Research 8 (11), 1662-1670, 2020 | 36 | 2020 |
| Indium segregation measured in InGaN quantum well layer Z Deng, Y Jiang, W Wang, L Cheng, W Li, W Lu, H Jia, W Liu, J Zhou, ... Scientific reports 4 (1), 6734, 2014 | 34 | 2014 |
| High performance visible-SWIR flexible photodetector based on large-area InGaAs/InP PIN structure X Li, J Zhang, C Yue, X Tang, Z Gao, Y Jiang, C Du, Z Deng, H Jia, ... Scientific Reports 12 (1), 7681, 2022 | 29 | 2022 |
| Thermal transport of nanoporous gallium nitride for photonic applications T Zhou, C Zhang, R ElAfandy, G Yuan, Z Deng, K Xiong, FM Chen, ... Journal of Applied Physics 125 (15), 2019 | 26 | 2019 |
| Analyses of 2-DEG characteristics in GaN HEMT with AlN/GaN super-lattice as barrier layer grown by MOCVD P Xu, Y Jiang, Y Chen, Z Ma, X Wang, Z Deng, Y Li, H Jia, W Wang, ... Nanoscale research letters 7, 1-6, 2012 | 22 | 2012 |
| Enhanced light extraction from AlGaInP-based red light-emitting diodes with photonic crystals X Tang, L Han, Z Ma, Z Deng, Y Jiang, W Wang, H Chen, C Du, H Jia Optics Express 29 (4), 5993-5999, 2021 | 21 | 2021 |
| Visualizing carrier transitions between localization states in a InGaN yellow–green light-emitting-diode structure Y Li, Z Deng, Z Ma, L Wang, H Jia, W Wang, Y Jiang, H Chen Journal of Applied Physics 126 (9), 2019 | 20 | 2019 |
| Stripping GaN/InGaN epitaxial films and fabricating vertical GaN-based light-emitting diodes X Tang, Z Ma, L Han, Z Deng, Y Jiang, W Wang, H Chen, C Du, H Jia Vacuum 187, 110160, 2021 | 13 | 2021 |
| Characteristics of AlGaN/GaN high electron mobility transistors on metallic substrate M Zhao, X Tang, W Huo, L Han, Z Deng, Y Jiang, W Wang, H Chen, C Du, ... Chinese Physics B 29 (4), 048104, 2020 | 13 | 2020 |
| Effect of H2 treatment in barrier on interface, optical and electrical properties of InGaN light emitting diodes Y Li, S Yan, X Hu, Y Song, Z Deng, C Du, W Wang, Z Ma, L Wang, H Jia, ... Superlattices and Microstructures 145, 106606, 2020 | 12 | 2020 |
| Characterization of periodicity fluctuations in InGaN/GaN MQWs by the kinematical simulation of X-ray diffraction Y Li, J Die, S Yan, Z Deng, Z Ma, L Wang, H Jia, W Wang, Y Jiang, ... Applied Physics Express 12 (4), 045502, 2019 | 12 | 2019 |
| Improved crystal quality of non-polar a-plane GaN epi-layers directly grown on optimized hole-array patterned r-sapphire substrates C Wang, Y Jiang, J Die, S Yan, X Hu, W Hu, Z Ma, Z Deng, H Jia, H Chen CrystEngComm 21 (17), 2747-2753, 2019 | 11 | 2019 |
| The influence of graded AlGaN buffer thickness for crack-free GaN on Si (111) substrates by using MOCVD PQ Xu, Y Jiang, ZG Ma, Z Deng, TP Lu, CH Du, YT Fang, P Zuo, H Chen Chinese Physics Letters 30 (2), 028101, 2013 | 11 | 2013 |
| Luminescence study in InGaAs/AlGaAs multi-quantum-well light emitting diode with p–n junction engineering L Han, M Zhao, X Tang, W Huo, Z Deng, Y Jiang, W Wang, H Chen, C Du, ... Journal of Applied Physics 127 (8), 2020 | 8 | 2020 |
| Improved photoluminescence in InGaN/GaN strained quantum wells LZ Ding, H Chen, M He, Y Jiang, TP Lu, Z Deng, FS Chen, F Yang, ... Chinese Physics Letters 31 (7), 076101, 2014 | 8 | 2014 |
| Effect of initial condition on the quality of GaN film and AlGaN/GaN heterojunction grown on flat sapphire substrate with ex-situ sputtered AlN by MOCVD Z Su, R Kong, X Hu, Y Song, Z Deng, Y Jiang, Y Li, H Chen Vacuum 201, 111063, 2022 | 7 | 2022 |
