Calculation of band structure and optical gain of type-II GaSbBi/GaAs quantum wells using 14-band k· p Hamiltonian I Mal, DP Samajdar, TD Das Superlattices and Microstructures 109, 442-453, 2017 | 25 | 2017 |
Hydrostatic pressure dependent optoelectronic properties of InGaAsN/GaAs spherical quantum dots for laser diode applications I Mal, J Jayarubi, S Das, AS Sharma, AJ Peter, DP Samajdar physica status solidi (b) 256 (3), 1800395, 2019 | 21 | 2019 |
Theoretical studies on band structure and optical gain of GaInAsN/GaAs/GaAs cylindrical quantum dot I Mal, DP Samajdar, AJ Peter Superlattices and Microstructures 119, 103-113, 2018 | 20 | 2018 |
Effect of Sb and N resonant states on the band structure and carrier effective masses of GaAs1-x-yNxSby alloys and GaAs1-x-yNxSby/GaAs quantum wells calculated using k· p … I Mal, DP Samajdar, TD Das Superlattices and Microstructures 106, 20-32, 2017 | 20 | 2017 |
Analytical modeling of temperature and power dependent photoluminescence (PL) spectra of InAs/GaAs quantum dots I Mal, DP Panda, B Tongbram, DP Samajdar, S Chakrabarti Journal of Applied Physics 124 (14), 2018 | 17 | 2018 |
Engineering of carrier localization in BGaAs SQW for novel intermediate band solar cells: Thermal annealing effect T Hidouri, M Biswas, I Mal, S Nasr, S Chakrabarti, DP Samajdar, F Saidi Solar Energy 199, 183-191, 2020 | 13 | 2020 |
First principle studies on the structural, thermodynamic and optoelectronic properties of Boron Bismuth: A promising candidate for mid-infrared optoelectronic applications I Mal, RK Mahato, V Tiwari, DP Samajdar Materials Science in Semiconductor Processing 121, 105352, 2021 | 11 | 2021 |
InSbNBi/InSb heterostructures for long wavelength infrared photodetector applications: A 16 band k· p study I Mal, DP Samajdar Journal of Applied Physics 128 (9), 2020 | 9 | 2020 |
Impact of localization phenomenon and temperature on the photoluminescence spectra of GaSbBi alloys and GaSbBi/GaAs quantum dots T Hidouri, I Mal, DP Samajdar, F Saidi, TD Das Superlattices and Microstructures 129, 252-258, 2019 | 9 | 2019 |
First principle studies on the structural and optoelectronic properties of boron antimonide: a promising candidate for photovoltaic applications V Tiwari, I Mal, SK Agnihotri, DP Samajdar Materials Science in Semiconductor Processing 122, 105505, 2021 | 8 | 2021 |
BGaAs strain compensation layer in novel BGaAs/InGaAs/BGaAs heterostructure: Exceptional tunability T Hidouri, S Nasr, I Mal, DP Samajdar, F Saidi, R Hamila, H Maaref Applied Surface Science 524, 146573, 2020 | 7 | 2020 |
On the implementation of a digital watermarking based on phase congruency A Basu, A Saha, J Das, S Roy, S Mitra, I Mal, SK Sarkar Proceedings of the 3rd International Conference on Frontiers of Intelligent …, 2015 | 6 | 2015 |
An analytical approach to study annealing induced interdiffusion of In and Ga for truncated pyramidal InAs/GaAs quantum dots I Mal, DP Panda, B Tongbram, S Chakrabarti, DP Samajdar IEEE Transactions on Nanotechnology 19, 223-229, 2020 | 5 | 2020 |
Theoretical exploration of the optoelectronic properties of InAsNBi/InAs heterostructures for infrared applications: A multi-band k· p approach N Jain, I Mal, DP Samajdar, N Bagga Materials Science in Semiconductor Processing 148, 106822, 2022 | 4 | 2022 |
Design and simulation of InAsBi PIN photodetector for Long wavelength Infrared applications I Mal, S Singh, DP Samajdar Materials Today: Proceedings 57, 289-294, 2022 | 4 | 2022 |
Geometrical Optimization of Gallium Arsenide (GaAs) nanostructure based Solar Cells S Singh, I Mal, DP Samajdar, K Dutta Materials Today: Proceedings 58, 686-691, 2022 | 4 | 2022 |
Investigation of optoelectronic and thermoelectric properties of InAsBi for LWIR applications: A first principles and k dot p study I Mal, DP Samajdar Materials Science in Semiconductor Processing 137, 106178, 2022 | 4 | 2022 |
Analytical modelling of organic solar cells with scattering interface A Hazra, I Mal, DP Samajdar, TD Das Optik 168, 747-753, 2018 | 4 | 2018 |
InPNBi/InP heterostructures for optoelectronic applications: A k‧ p investigation I Mal, DP Samajdar Materials Science in Semiconductor Processing 149, 106857, 2022 | 2 | 2022 |
Anti-reflective nanostructures for efficiency improvement of GaAs based solar cells AK Tenwar, S Singh, I Mal, DP Samajdar Materials Today: Proceedings 58, 682-685, 2022 | 2 | 2022 |