| Capacitorless DRAM cells based on high-performance indium-tin-oxide transistors with record data retention and reduced write latency Q Hu, C Gu, S Zhu, Q Li, A Tong, J Kang, R Huang, Y Wu IEEE Electron Device Letters 44 (1), 60-63, 2022 | 23 | 2022 |
| True Nonvolatile High‐Speed DRAM Cells Using Tailored Ultrathin IGZO Q Hu, C Gu, Q Li, S Zhu, S Liu, Y Li, L Zhang, R Huang, Y Wu Advanced Materials 35 (20), 2210554, 2023 | 22 | 2023 |
| Optimized IGZO FETs for Capacitorless DRAM with Retention of 10 ks at RT and 7 ks at 85 °C at Zero Vhold with Sub-10 ns Speed and 3-bit Operation Q Hu, Q Li, S Zhu, C Gu, S Liu, R Huang, Y Wu 2022 International Electron Devices Meeting (IEDM), 26.6. 1-26.6. 4, 2022 | 18 | 2022 |
| Ultrashort 15-nm flexible radio frequency ITO transistors enduring mechanical and temperature stress Q Hu, S Zhu, C Gu, S Liu, M Zeng, Y Wu Science Advances 8 (51), eade4075, 2022 | 13 | 2022 |
| BEOL-Compatible High-Performance a-IGZO Transistors with Record high Ids,max = 1207 μA/μm and on-off ratio exceeding 1011 at Vds = 1V Q Li, C Gu, S Zhu, Q Hu, W Zhao, X Li, R Huang, Y Wu 2022 International Electron Devices Meeting (IEDM), 2.7. 1-2.7. 4, 2022 | 12 | 2022 |
| High-performance short-channel top-gate indium-tin-oxide transistors by optimized gate dielectric C Gu, Q Hu, S Zhu, Q Li, M Zeng, H Liu, J Kang, S Liu, Y Wu IEEE Electron Device Letters 44 (5), 837-840, 2023 | 9 | 2023 |
| High-stability flexible radio frequency transistor and mixer based on ultrathin indium tin oxide channel Q Hu, S Zhu, C Gu, Y Wu Applied Physics Letters 121 (24), 2022 | 6 | 2022 |
| First Demonstration of Sequential Integration for Stacked Gate-All-Around a-IGZO Nanosheet Transistors with Record Id = 2.05 mA/µm, gm = 1.13 mS/µm and … Q Li, W Zhao, Q Hu, C Gu, S Zhu, H Liu, R Huang, Y Wu 2023 International Electron Devices Meeting (IEDM), 1-4, 2023 | 4 | 2023 |
| 1/f noise of short-channel indium tin oxide transistors under stress C Gu, Q Hu, Q Li, S Zhu, J Kang, Y Wu Applied Physics Letters 122 (25), 2023 | 4 | 2023 |
| First Demonstration of Deeply Scaled 2T0C DRAM with Record Data Retention and Fast Write Speed S Zhu, Q Hu, Q Li, S Yan, H Liu, R Liu, Y Wu IEEE Electron Device Letters, 2025 | | 2025 |
| High-Performance Edge-Contact Monolayer Molybdenum Disulfide Transistors J Xiao, X Xiong, X Shi, S Liu, S Zhu, Y Zhang, R Huang, Y Wu Research 8, 0593, 2025 | | 2025 |
| High-Performance Edge-Contact Monolayer Molybdenum Disulfide Transistors 高性能边缘接触单层二硫化钼晶体管 X Xiong, J Xiao, X Shi, S Liu, S Zhu, Y Zhang, R Huang, Y Wu Research, 2025 | | 2025 |
| Demonstration of Low-Power Three-Dimensional CMOS Inverters based on Si p-Tunnel FET and ITO n-FET A Tong, K Wang, Q Hu, Z Wang, X Xiong, S Yan, S Zhu, Q Li, Y Wu, Y Ren, ... IEEE Electron Device Letters, 2025 | | 2025 |
| First Experimental Demonstration of 3D-Stacked 2T0C DRAM Cells Based on Indium Tin Oxide Channel C Gu, Q Hu, S Zhu, Q Li, M Zeng, J Kang, A Tong, Y Wu IEEE Electron Device Letters, 2024 | | 2024 |
| First Demonstration of Top-Gate Indium-Tin-Oxide RF Transistors with Record High Cut-off Frequency of 48 GHz, Id of 2.32 mA/μm and gm of 900 μS/μm on SiC … Q Hu, C Gu, S Liu, M Zeng, S Zhu, J Kang, R Liu, W Zhao, A Tong, Q Li, ... 2023 International Electron Devices Meeting (IEDM), 1-4, 2023 | | 2023 |
