| Study of a hysteresis window of FinFET and fully-depleted silicon-on-insulator (FDSOI) MOSFET with ferroelectric capacitor C Yoon, S Moon, C Shin Nano Convergence 7, 1-7, 2020 | 24 | 2020 |
| Energy-delay sensitivity analysis of a nanoelectromechanical relay with the negative capacitance of a ferroelectric capacitor C Yoon, G Choe, C Shin IEEE Journal of the Electron Devices Society 8, 365-372, 2020 | 4 | 2020 |
| Electrical Characteristics of Nanoelectromechanical Relay with Multi-Domain HfO2-Based Ferroelectric Materials C Yoon, C Shin Electronics 9 (8), 1208, 2020 | 1 | 2020 |
| Device Design Guideline for HfO₂-Based Ferroelectric-Gated Nanoelectromechanical System C Yoon, J Min, J Shin, C Shin IEEE Journal of the Electron Devices Society 8, 608-613, 2020 | 1 | 2020 |
| Time-resolved electrical characteristics of ferroelectric-gated fully depleted silicon on insulator devices C Yoon, C Shin Solid-State Electronics 164, 107698, 2020 | 1 | 2020 |
| Quasi-1-Dimensional Dual-Gate MoS2 Field-Effect Transistors with 50 nm Channel Length Y Zhou, C Yoon, S Vasishta, X Xu, K Liang, A Dodabalapur ACS Applied Nano Materials 6 (16), 15048-15053, 2023 | | 2023 |
| Advantages of adding a weak second gate in sub-micron bottom-contact organic thin film transistors C Yoon, Y Zhou, CM McCulley, K Liang, A Dodabalapur Applied Physics Letters 122 (22), 2023 | | 2023 |
Changhwan ShinProfessor at Korea University在 korea.ac.kr 的电子邮件经过验证
