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Younghwan Lee
Younghwan Lee
Assistant professor, Chonnam National University
在 jnu.ac.kr 的电子邮件经过验证
标题
引用次数
引用次数
年份
Many routes to ferroelectric HfO2: A review of current deposition methods
HA Hsain, Y Lee, M Materano, T Mittmann, A Payne, T Mikolajick, ...
Journal of Vacuum Science & Technology A 40 (1), 2022
862022
Compositional dependence of crystallization temperatures and phase evolution in hafnia-zirconia (HfxZr1− x)O2 thin films
HA Hsain, Y Lee, G Parsons, JL Jones
Applied Physics Letters 116 (19), 2020
742020
Domains and domain dynamics in fluorite-structured ferroelectrics
DH Lee, Y Lee, K Yang, JY Park, SH Kim, PRS Reddy, M Materano, ...
Applied Physics Reviews 8 (2), 2021
642021
A perspective on semiconductor devices based on fluorite-structured ferroelectrics from the materials–device integration perspective
JY Park, K Yang, DH Lee, SH Kim, Y Lee, PR Reddy, JL Jones, MH Park
Journal of Applied Physics 128 (24), 2020
612020
Unexpectedly large remanent polarization of Hf0.5Zr0.5O2 metal–ferroelectric–metal capacitor fabricated without breaking vacuum
Y Lee, H Alex Hsain, SS Fields, ST Jaszewski, MD Horgan, PG Edgington, ...
Applied Physics Letters 118 (1), 2021
322021
Roadmap on ferroelectric hafnia-and zirconia-based materials and devices
JPB Silva, R Alcala, UE Avci, N Barrett, L Bégon-Lours, M Borg, S Byun, ...
APL Materials 11 (8), 2023
312023
Temperature‐Dependent Phase Transitions in HfxZr1‐xO2 Mixed Oxides: Indications of a Proper Ferroelectric Material
U Schroeder, T Mittmann, M Materano, PD Lomenzo, P Edgington, ...
Advanced Electronic Materials 8 (9), 2200265, 2022
312022
Morphology controlled Co-precipitation method for nano structured transparent MgAl2O4
S Nam, M Lee, BN Kim, Y Lee, S Kang
Ceramics International 43 (17), 15352-15359, 2017
242017
Reduced fatigue and leakage of ferroelectric TiN/Hf0.5Zr0.5O2/TiN capacitors by thin alumina interlayers at the top or bottom interface
HA Hsain, Y Lee, S Lancaster, PD Lomenzo, B Xu, T Mikolajick, ...
Nanotechnology 34 (12), 125703, 2023
162023
Effect of stress on fluorite-structured ferroelectric thin films for semiconductor devices
Y Lee, HW Jeong, SH Kim, K Yang, MH Park
Materials Science in Semiconductor Processing 160, 107411, 2023
122023
Perspective on Ferroelectric Devices: Lessons from Interfacial Chemistry
K Yang, SH Kim, HW Jeong, DH Lee, GH Park, Y Lee, MH Park
Chemistry of Materials 35 (6), 2219-2237, 2023
122023
Role of Oxygen Source on Buried Interfaces in Atomic-Layer-Deposited Ferroelectric Hafnia–Zirconia Thin Films
HA Hsain, Y Lee, S Lancaster, M Materano, R Alcala, B Xu, T Mikolajick, ...
ACS Applied Materials & Interfaces 14 (37), 42232-42244, 2022
122022
Unveiled Ferroelectricity in Well‐Known Non‐Ferroelectric Materials and Their Semiconductor Applications
DH Lee, Y Lee, YH Cho, H Choi, SH Kim, MH Park
Advanced Functional Materials 33 (42), 2303956, 2023
92023
A perspective on the physical scaling down of hafnia-based ferroelectrics
JY Park, DH Lee, GH Park, J Lee, Y Lee, MH Park
Nanotechnology 34 (20), 202001, 2023
92023
The influence of crystallographic texture on structural and electrical properties in ferroelectric Hf0.5Zr0.5O2
Y Lee, RA Broughton, HA Hsain, SK Song, PG Edgington, MD Horgan, ...
Journal of Applied Physics 132 (24), 2022
82022
Approaches for characterizing surfaces damaged by disinfection in healthcare
P Strader, Y Lee, P Teska, X Li, JL Jones
Nano Life 9 (04), 1950002, 2019
72019
Thermal stability of antiferroelectric-like Al: HfO2 thin films with TiN or Pt electrodes
A Payne, H Alex Hsain, Y Lee, NA Strnad, JL Jones, B Hanrahan
Applied Physics Letters 120 (23), 2022
52022
Mitigation of field-driven dynamic phase evolution in ferroelectric Hf0.5Zr0.5O2 films by adopting oxygen-supplying electrode
Y Lee, SH Kim, HW Jeong, GH Park, J Lee, YY Kim, MH Park
Applied Surface Science 648, 158948, 2024
42024
Effect of ferroelectric and interface films on the tunneling electroresistance of the Al2O3/Hf0.5Zr0.5O2 based ferroelectric tunnel junctions
A Shekhawat, HA Hsain, Y Lee, JL Jones, S Moghaddam
Nanotechnology 32 (48), 485204, 2021
42021
Wake-up free ferroelectric hafnia-zirconia capacitors fabricated via vacuum-maintaining atomic layer deposition
HA Hsain, Y Lee, PD Lomenzo, R Alcala, B Xu, T Mikolajick, U Schroeder, ...
Journal of Applied Physics 133 (22), 2023
22023
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